SOT223 PNP SILICON PLANAR DARLINGTON TRANSISTORS FZTA63 FZTA64 TYPICAL CHARACTERISTICS 1.5 1.5 +25° C 1.0 1.0 0.5 0.5 IC/IB=1000 0 10m 100m 1 1m 10m 100m 1 10 IC - Collector Current (A) VCE(sat) v IC 45k PARTMARKING DETAILS: FULL DEVICE TYPE COMPLIMENTARY TYPES: FZTA63 = FZTA13 FZTA64 = FZTA14 4 3 2 VCE(sat) v IC 2.1 IC/IB=1000 +100 °C 1.4 30k +25 °C 0.7 -55 °C 0 SOT223 ABSOLUTE MAXIMUM RATINGS. -55 °C +25 °C +100 °C 10 VCE=5V ✪ 1 IC - Collector Current (A) 60k ISSUE 4 MARCH 1996 IC/IB=1000 0 1m FZTA63 FZTA64 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -10 V Peak Pulse Current ICM -800 mA Continuous Collector Current IC -500 mA Peak Base Current IBM -200 mA Power Dissipation at Tamb=25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). -55 °C +25 °C +100 °C UNIT CONDITIONS. -30 V IC=-10µ A, IE=0 V(BR)CEO -30 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -10 V IE=-10µ A, IC=0 Collector Cut-Off Current ICBO -100 nA VCB=-30V, IE=0 1.5 Emitter Cut-Off Current IEBO -100 nA VEB=-10V, IC=0 -1.5 V 1.0 Collector-Emitter Saturation VCE(sat) Voltage IC=-100mA, IB=-0.1mA* Base-Emitter Saturation Voltage -2.0 V IC=-100mA, IB=-0.1mA* 15k 0 1m 10m 100m 10 1 1m IC - Collector Current (A) 10m hFE v IC 2.0 100m 1 10 IC - Collector Current (A) VBE(sat) v IC 1 VCE=5V 0.1 DC 1s 100ms 10ms 1ms 100µs -55 °C +25 °C +100 °C 0.5 0 0.01 1m 10m 100m 1 10 1 10 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 100 PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage Static Forward Current Transfer Ratio Transition Frequency VBE(sat) FZTA63 hFE FZTA64 fT MAX. 5K 10K IC=-10mA, VCE=-5V IC=-100mA, VCE=-5V* 10K 20K IC=-10mA, VCE=-5V IC=-100mA, VCE=-5V* 125 MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 304 3 - 303 IC=-50mA, VCE=-5V f=20MHz SOT223 PNP SILICON PLANAR DARLINGTON TRANSISTORS FZTA63 FZTA64 TYPICAL CHARACTERISTICS 1.5 1.5 +25° C 1.0 1.0 0.5 0.5 IC/IB=1000 0 10m 100m 1 1m 10m 100m 1 10 IC - Collector Current (A) VCE(sat) v IC 45k PARTMARKING DETAILS: FULL DEVICE TYPE COMPLIMENTARY TYPES: FZTA63 = FZTA13 FZTA64 = FZTA14 4 3 2 VCE(sat) v IC 2.1 IC/IB=1000 +100 °C 1.4 30k +25 °C 0.7 -55 °C 0 SOT223 ABSOLUTE MAXIMUM RATINGS. -55 °C +25 °C +100 °C 10 VCE=5V ✪ 1 IC - Collector Current (A) 60k ISSUE 4 MARCH 1996 IC/IB=1000 0 1m FZTA63 FZTA64 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -10 V Peak Pulse Current ICM -800 mA Continuous Collector Current IC -500 mA Peak Base Current IBM -200 mA Power Dissipation at Tamb=25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). -55 °C +25 °C +100 °C UNIT CONDITIONS. -30 V IC=-10µ A, IE=0 V(BR)CEO -30 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -10 V IE=-10µ A, IC=0 Collector Cut-Off Current ICBO -100 nA VCB=-30V, IE=0 1.5 Emitter Cut-Off Current IEBO -100 nA VEB=-10V, IC=0 -1.5 V 1.0 Collector-Emitter Saturation VCE(sat) Voltage IC=-100mA, IB=-0.1mA* Base-Emitter Saturation Voltage -2.0 V IC=-100mA, IB=-0.1mA* 15k 0 1m 10m 100m 10 1 1m IC - Collector Current (A) 10m hFE v IC 2.0 100m 1 10 IC - Collector Current (A) VBE(sat) v IC 1 VCE=5V 0.1 DC 1s 100ms 10ms 1ms 100µs -55 °C +25 °C +100 °C 0.5 0 0.01 1m 10m 100m 1 10 1 10 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 100 PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage Static Forward Current Transfer Ratio Transition Frequency VBE(sat) FZTA63 hFE FZTA64 fT MAX. 5K 10K IC=-10mA, VCE=-5V IC=-100mA, VCE=-5V* 10K 20K IC=-10mA, VCE=-5V IC=-100mA, VCE=-5V* 125 MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 304 3 - 303 IC=-50mA, VCE=-5V f=20MHz