ZETEX ZUMTQ31A

SOT323 NPN SILICON PLANAR
VHF/UHF TRANSISTORS
ZUMTQ31A
ISSUE 1 – DECEMBER 1998
PARTMARKING DETAIL
–
T11
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V CBO
30
V
Collector-Emitter Voltage
V CEO
15
V
Emitter-Base Voltage
V EBO
3
V
Continuous Collector Current
IC
100
mA
Base Current
IB
50
mA
Power Dissipation at T amb=25°C
P tot
330
mW
Operating and Storage Temperature Range
T j:T stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
MIN.
Collector-Base
Breakdown Voltage
V (BR)CBO
Collector-Emitter
Breakdown Voltage
MAX.
UNIT
CONDITIONS.
30
V
I C=1.0µA, I E =0
V (BR)CEO
15
V
I C=3mA, I B=0*
Emitter-Base
Breakdown Voltage
V (BR)EBO
3
V
I E=10µA, I C=0
Collector Cut-Off
Current
I CBO
0.01
µA
V CB=15V, I E=0
Collector-Emitter
Saturation Voltage
V CE(sat)
0.4
V
I C=10mA, I B=1mA
Base-Emitter
Saturation Voltage
V BE(sat)
1.0
V
I C=10mA, I B=1mA
Static Forward Current
Transfer Ratio
h FE
100
Transition
Frequency
fT
600
Collector-Base
Capacitance
C obo
Input Capacitance
Noise Figure
I C=3mA, V CE=1V
MHz
I C=4mA, V CE=10V
f=100MHz
1.7
pF
V CB=10V, f=1MHz
C ibo
2.0
pF
V CB=0.5V, f=1MHz
N
6.0
dB
I C=1mA, V CE=6V
R s=400Ω, f=60MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device