P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2106C ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=5Ω G D REFER TO ZVP2106A FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE -60 UNIT V Continuous Drain Current at Tamb=25°C ID -280 mA Pulsed Drain Current IDM -4 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 700 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS -60 Gate-Source Threshold Voltage VGS(th) -1.5 MAX. UNIT CONDITIONS. -3.5 V ID=-1mA, VGS=0V V ID=-1mA, VDS= VGS Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS -0.5 -100 µA µA VDS=-60 V, VGS=0 VDS=-48 V, VGS=0V, T=125°C(2) A VDS=-18 V, VGS=-10V 5 Ω VGS=-10V,ID=-500mA mS VDS=-18V,ID=-500mA On-State Drain Current(1) ID(on) Static Drain-Source On-State Resistance (1) RDS(on) -1 Forward Transconductance (1)(2) gfs Input Capacitance (2) Ciss 100 pF Common Source Output Capacitance (2) Coss 60 pF Reverse Transfer Capacitance (2) Crss 20 pF 150 Turn-On Delay Time (2)(3) td(on) 7 ns Rise Time (2)(3) tr 15 ns Turn-Off Delay Time (2)(3) td(off) 12 ns Fall Time (2)(3) tf 15 ns VDS=-18V, VGS=0V, f=1MHz VDD ≈ -18V, ID=-500mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3-420