ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V(BR)DSS=20V; RDS(ON)=0.13V; ID=2.4A P-CHANNEL: V(BR)DSS=-20V; RDS(ON)=0.27V; ID=-1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package N-CHANNEL P-CHANNEL APPLICATIONS • DC - DC Converters • Power Management Functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXMD63C02XTA 7 12mm embossed 1000 units ZXMD63C02XTC 13 12mm embossed 4000 units DEVICE MARKING • ZXM63C02 PROVISIONAL ISSUE A - JUNE 1999 1 Top View ZXMD63C02X ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DSS N-CHANNEL P-CHANNEL UNIT 20 -20 V -1.7 -1.35 A ± 12 Gate- Source Voltage V GS Continuous Drain Current (V GS=4.5V; T A=25°C)(b)(d) (V GS=4.5V; T A=70°C)(b)(d) ID Pulsed Drain Current (c)(d) I DM 19 -9.6 A Continuous Source Current (Body Diode)(b)(d) IS -1.5 -1.4 A I SM 19 Pulsed Source Current (Body Diode)(c)(d) 2.4 1.9 V -9.6 A Power Dissipation at T A=25°C (a)(d) Linear Derating Factor PD 0.87 6.9 W mW/°C Power Dissipation at T A=25°C (a)(e) Linear Derating Factor PD 1.04 8.3 W mW/°C Power Dissipation at T A=25°C (b)(d) Linear Derating Factor PD 1.25 10 W mW/°C Operating and Storage Temperature Range T j:T stg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) R θJA 143 °C/W Junction to Ambient (b)(d) R θJA 100 °C/W Junction to Ambient (a)(e) R θJA 120 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t<10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power. PROVISIONAL ISSUE A - JUNE 1999 2 ZXMD63C02X Max Power Dissipation (Watts) N-CHANNEL CHARACTERISTICS 100 10 1 Thermal Resistance (°C/W) 0.1 DC 1s 100ms 10ms 1ms 100us 1 0.1 10 100 1.0 Refer Note (b) Refer Note (a) 0.8 0.6 0.4 0.2 0 0 20 40 60 100 80 120 Safe Operating Area Derating Curve Refer Note (b) 100 80 60 D=0.5 40 D=0.2 D=0.1 D=0.05 0 0.0001 1.2 T - Temperature (°) 120 20 1.4 VDS - Drain-Source Voltage (V) Thermal Resistance (°C/W) ID - Drain Current (A) Refer Note (a) 0.001 Single Pulse 0.01 0.1 1 10 160 160 Refer Note (a) 140 120 100 80 D=0.5 60 40 20 D=0.2 D=0.1 D=0.05 0 0.0001 0.001 0.01 100 140 Single Pulse 0.1 1 10 100 1000 Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Transient Thermal Impedance PROVISIONAL ISSUE A - JUNE 1999 3 ZXMD63C02X Max Power Dissipation (Watts) P-CHANNEL CHARACTERISTICS 100 10 1 Thermal Resistance (°C/W) 0.1 DC 1s 100ms 10ms 1ms 100µs 1 0.1 10 100 1.0 Refer Note (b) Refer Note (a) 0.8 0.6 0.4 0.2 0 0 20 40 60 100 80 120 Safe Operating Area Derating Curve Refer Note (b) 100 80 60 D=0.5 40 D=0.2 D=0.1 D=0.05 0 0.0001 1.2 T - Temperature (°) 120 20 1.4 VDS - Drain-Source Voltage (V) Thermal Resistance (°C/W) ID - Drain Current (A) Refer Note (a) 0.001 Single Pulse 0.01 0.1 1 10 160 160 140 Refer Note (a) 120 100 80 D=0.5 60 40 20 D=0.2 D=0.1 D=0.05 0 0.0001 0.001 0.01 100 140 Single Pulse 0.1 1 10 100 1000 Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Transient Thermal Impedance PROVISIONAL ISSUE A - JUNE 1999 4 ZXMD63C02X N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs 20 V I D=250µA, V GS=0V 1 µA V DS=20V, V GS=0V 100 nA V GS=± 12V, V DS=0V V I D =250µA, V DS= V GS Ω Ω V GS=4.5V, I D=1.7A V GS=2.7V, I D=0.85A S V DS=10V,I D=0.85A 0.7 0.130 0.150 2.6 DYNAMIC (3) Input Capacitance C iss 350 pF Output Capacitance C oss 120 pF Reverse Transfer Capacitance C rss 50 pF Turn-On Delay Time t d(on) 3.4 ns Rise Time tr 8.1 ns Turn-Off Delay Time t d(off) 13.5 ns Fall Time tf 9.1 ns Total Gate Charge Qg 6 nC Gate-Source Charge Q gs 0.65 nC Gate Drain Charge Q gd 2.5 nC Diode Forward Voltage (1) V SD 0.95 V T j=25°C, I S=1.7A, V GS=0V Reverse Recovery Time (3) t rr 15.0 ns T j=25°C, I F=1.7A, di/dt= 100A/µs Reverse Recovery Charge(3) Q rr 5.9 nC V DS=15 V, V GS=0V, f=1MHz SWITCHING(2) (3) V DD =10V, I D=1.7A R G=6.0Ω, R D=5.7Ω (Refer to test circuit) V DS=16V,V GS=4.5V, I D =1.7A (Refer to test circuit) SOURCE-DRAIN DIODE (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - JUNE 1999 5 ZXMD63C02X N-CHANNEL TYPICAL CHARACTERISTICS 100 100 +150°C 5V 4.5V 4V 3.5V VGS 10 ID - Drain Current (A) ID - Drain Current (A) +25°C 3V 2.5V 2V 1 0.1 0.1 1 0.1 10 1 100 Output Characteristics 1.8 Normalised RDS(on) and VGS(th) ID - Drain Current (A) 1 Output Characteristics 10 T=150°C T=25°C 1 1.5 1 2 2.5 3 3.5 4 VGS - Gate-Source Voltage (V) Typical Transfer Characteristics 10 1 VGS=3V VGS=5V 0.1 0.1 1 10 1.6 RDS(on) VGS=4.5V ID=1.7A 1.4 1.2 1.0 VGS=VDS 0.8 ID=250uA VGS(th) 0.6 0.4 0.2 -100 -50 0 50 100 150 200 Tj - Junction Temperature (°C) Normalised RDS(on) and VGS(th) v Temperature ISD - Reverse Drain Current (A) RDS(on) - Drain-Source On-Resistance (Ω) 2.5V VDS - Drain-Source Voltage (V) VDS=10V 0.01 VGS 3V VDS - Drain-Source Voltage (V) 100 0.1 3.5V 2V 0.1 100 10 5V 4.5V 4V 10 100 100 10 1 T=150°C T=25°C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID - Drain Current (A) VSD - Source-Drain Voltage (V) On-Resistance v Drain Current Source-Drain Diode Forward Voltage PROVISIONAL ISSUE A - JUNE 1999 6 ZXMD63C02X C - Capacitance (pF) 800 VGS - Gate-Source Voltage (V) N-CHANNEL CHARACTERISTICS Vgs=0V f=1Mhz 700 600 Ciss Coss Crss 500 400 300 200 100 0 0.1 1 10 100 5 ID=1.7A 4 VDS=16V 3 2 1 0 0 1 2 3 4 5 6 VDS - Drain Source Voltage (V) Q -Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit PROVISIONAL ISSUE A - JUNE 1999 7 ZXMD63C02X P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs -20 V I D=-250µA, V GS=0V -1 µA V DS=-20V, V GS=0V ±100 nA V GS=± 12V, V DS=0V V I D =-250µA, V DS= V GS Ω Ω V GS=-4.5V, I D=-1.2A V GS=-2.7V, I D=-0.6A S V DS=-10V,I D=-0.6A -0.7 0.27 0.40 1.3 DYNAMIC (3) Input Capacitance C iss 290 pF Output Capacitance C oss 120 pF Reverse Transfer Capacitance C rss 50 pF Turn-On Delay Time t d(on) 3.4 ns Rise Time tr 9.6 ns Turn-Off Delay Time t d(off) 16.4 ns Fall Time tf 20.4 ns Total Gate Charge Qg 5.25 nC Gate-Source Charge Q gs 1.0 nC Gate Drain Charge Q gd 2.25 nC Diode Forward Voltage (1) V SD -0.95 V T j=25°C, I S=-1.2A, V GS=0V Reverse Recovery Time (3) t rr 21.7 ns T j=25°C, I F=-1.2A, di/dt= 100A/µs Reverse Recovery Charge(3) Q rr 9.6 nC V DS=-15 V, V GS=0V, f=1MHz SWITCHING(2) (3) V DD =-10V, I D=-1.2A R G=6.0Ω, R D=8.3Ω (Refer to test circuit) V DS=-16V,V GS=-4.5V, I D =-1.2A (Refer to test circuit) SOURCE-DRAIN DIODE (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - JUNE 1999 8 ZXMD63C02X P-CHANNEL CHARACTERISTICS 2.5V -VGS 2V 1 0.1 0.1 1 100 1.5 2 3 2.5 3.5 4 4.5 1.6 RDS(on) 1.4 VGS=-4.5V ID=-1.2A 1.2 1.0 VGS=VDS ID=-250uA 0.8 VGS(th) 0.6 0.4 -100 -50 0 50 100 150 200 -VGS - Gate-Source Voltage (V) Tj - Junction Temperature (°C) Typical Transfer Characteristics Normalised RDS(on) and VGS(th) v Temperature -ISD - Reverse Drain Current (A) -ID - Drain Current (A) RDS(on) - Drain-Source On-Resistance (Ω) 10 Output Characteristics 10 1 VGS=-3V VGS=-5V 0.1 1 0.1 Output Characteristics T=150 C T=25 C 1 2V 1 -VDS - Drain-Source Voltage (V) VDS=-10V 0.1 2.5V -VDS - Drain-Source Voltage (V) 10 1 3.5V 3V -VGS 0.1 100 10 5V 4.5V 4V +150°C Normalised RDS(on) and VGS(th) -ID - Drain Current (A) 10 3.5V 3V 5V 4.5V 4V +25 C -ID - Drain Current (A) 10 0.1 1 10 10 1 T=150°C T=25°C 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -ID - Drain Current (A) -VSD - Source-Drain Voltage (V) On-Resistance v Drain Current Source-Drain Diode Forward Voltage PROVISIONAL ISSUE A - JUNE 1999 9 ZXMD63C02X C - Capacitance (pF) 700 VGS - Gate-Source Voltage (V) TYPICALTYPICAL CHARACTERISTICS P-CHANNEL CHARACTERISTICS Vgs=0V f=1Mhz 600 500 Ciss Coss Crss 400 300 200 100 0 0.1 1 10 100 5 ID=-1.2A 4.5 4 3.5 VDS=-16V 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS - Drain Source Voltage (V) Q -Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit PROVISIONAL ISSUE A - JUNE 1999 10 ZXMD63C02X PACKAGE DIMENSIONS DIM D Millimetres Inches MIN MIN A 7 1.10 MAX 0.043 6 5 A1 0.05 0.15 0.002 0.006 B 0.25 0.40 0.010 0.016 C 0.13 0.23 0.005 0.009 D 2.90 3.10 0.114 0.122 e 0.65 BSC 0.0256 BSC E 2.90 3.10 0.114 0.122 H 4.90 BSC 0.193 BSC L 0.40 0.70 0.016 0.028 q° 0° 6° 0° 6° H E 8 MAX 1 2 3 4 eX6 A A1 θ° B C L Conforms to JEDEC MO-187 Iss A PAD LAYOUT DETAILS Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1999 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PROVISIONAL ISSUE A - JUNE 1999 12