VSM ITAVM ITRMS ITSM VT0 rT = = = = = = 6500 V 1580 A 2480 A 29700 A 1.2 V 0.458 mΩ Ω Bi-Directional Control Thyristor 5STB 18U6500 Doc. No. 5SYA1037-02 Apr. 02 • Two thyristors integrated into one wafer • Patented free-floating silicon technology • Designed for traction, energy and industrial applications • Optimum power handling capability • Interdigitated amplifying gate. The electrical and thermal data are valid for one thyristor half of the device. Blocking Maximum rated values Symbol Conditions 5STB 18U6500 5STB 18U6200 5STB 18U5800 VSM f = 5 Hz, tp = 10ms 6500 V 6200 V 5800 V VRM f = 50 Hz, tp = 10ms 5600 V 5300 V 4900 V IRM VRM, Tj = 110°C ≤ 600 mA dV/dtcrit Exp. to 0.67 x VDRM, Tj = 110°C 2000 V/µs Mechanical data Parameter Symbol Conditions min typ. max Unit Mounting force FM 120 135 160 kN Acceleration a Device unclamped 50 m/s 2 Acceleration a Device clamped 100 m/s 2 Weight m Surface creepage distance DS 53 mm Air strike distance Da 22 mm 3.6 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. kg 5STB 18U6500 On-state Parameter Symbol Conditions min Max. average on-state current ITAVM 1580 A 2480 A 29700 A 4400 kA2s 31800 A 4190 kA2s Half sine wave, Tc = 70°C Max. RMS on-state current ITRMS typ. max Unit Max. peak non-repetitive surge current ITSM Limiting load integral I2t Max. peak non-repetitive surge current ITSM Limiting load integral I2t On-state voltage VT IT = 1600 A, Tj= 110°C 1.93 V Threshold voltage VT0 IT = 1000 A - 3000 A, Tj= 110°C 1.2 V Slope resistance rT Tj = 110°C 0.458 mΩ Holding current IH Tj = 25°C 125 mA Tj = 110°C 75 mA max Unit 250 A/µs 1000 A/µs 3 µs 800 µs 3200 µAs max Unit tp = 10 ms, Tj = 110°C, V = VR=0 V tp = 8.3 ms, Tj = 110°C, V = VR=0 V Switching Parameter Symbol Conditions Critical rate of rise of onstate current di/dtcrit Critical rate of rise of onstate current di/dtcrit Delay time td VD = 0.4⋅VRM, IFG = 2 A, tr = 0.5 µs Turn-off time tq Tj = 110°C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/µs, VD ≤ 0.67⋅VRM, dvD/dt = 20V/µs, Recovery charge Qrr Tj = 110°C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/µs min typ. Cont. Tj = 110°C, ITRM = 2000 A, f = 50 Hz VD ≤ 0.67⋅VRM, Cont. IFG = 2 A, tr = 0.5 µs f = 1Hz 2100 Triggering Parameter Symbol Conditions Gate trigger voltage VGT Tj = 25°C 2.6 V Gate trigger current IGT Tj = 25°C 400 mA Gate non-trigger voltage VGD VD = 0.4 x VRM, Tvjmax = 110°C 0.3 V Gate non-trigger current IGD VD = 0.4 x VRM 10 mA Peak forward gate voltage VFGM 12 V Max. rated peak forward gate current IFGM 10 A Peak reverse gate voltage VRGM 10 V 3 W Max. rated gate power loss PG Max. rated peak forward gate power PGM min typ. For DC gate current see Fig. 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1037-02 Apr. 02 page 2 of 5 5STB 18U6500 Thermal Parameter Symbol Conditions Operating junction temperature range Tj min max Unit 110 °C 140 °C Double side cooled 8 K/kW Anode side cooled 16 K/kW Cathode side cooled 16 K/kW Double side cooled 1.6 K/kW Single side cooled 3.2 K/kW Storage temperature range Tstg Thermal resistance junction RthJC to case Thermal resistance case to RthCH heatsink typ. -40 Analytical function for transient thermal impedance: n ZthJC(t) = å Ri(1 - e -t/τ i ) i =1 i 1 2 3 4 Ri(K/kW) 5.11 1.63 0.85 0.45 τi(s) 0.9531 0.1541 0.0211 0.0068 Fig. 1 Transient thermal impedance junction to case Fig. 2 Isothermal on-state characteristics Fig. 3 Isothermal on-state characteristics ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1037-02 Apr. 02 page 3 of 5 5STB 18U6500 Fig. 4 On-state power dissipation vs. mean onstate current. Switching losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1037-02 Apr. 02 page 4 of 5 5STB 18U6500 IG (t) 100 % 90 % IGM IGon diG/dt tr tp(IGM) IGM ≈ 2..5 A ≥ 1.5 IGT ≥ 2 A/µs ≤ 1 µs ≈ 5...20µs diG/dt IGon 10 % tr t tp (IGM) tp (IGon) Fig. 8 Recommendet gate current waveform. Fig. 9 Max. rated peak gate power loss. Fig. 10 Recovery charge vs. decay rate of on-state current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abbsem.com Doc. No. 5SYA1037-02 Apr. 02