ABB 5STB18U6500

VSM
ITAVM
ITRMS
ITSM
VT0
rT
=
=
=
=
=
=
6500 V
1580 A
2480 A
29700 A
1.2 V
0.458 mΩ
Ω
Bi-Directional Control Thyristor
5STB 18U6500
Doc. No. 5SYA1037-02 Apr. 02
•
Two thyristors integrated into one wafer
•
Patented free-floating silicon technology
•
Designed for traction, energy and industrial applications
•
Optimum power handling capability
•
Interdigitated amplifying gate.
The electrical and thermal data are valid for one thyristor half of the device.
Blocking Maximum rated values
Symbol
Conditions
5STB 18U6500 5STB 18U6200 5STB 18U5800
VSM
f = 5 Hz, tp = 10ms
6500 V
6200 V
5800 V
VRM
f = 50 Hz, tp = 10ms
5600 V
5300 V
4900 V
IRM
VRM, Tj = 110°C
≤ 600 mA
dV/dtcrit
Exp. to 0.67 x VDRM, Tj = 110°C
2000 V/µs
Mechanical data
Parameter
Symbol Conditions
min
typ.
max
Unit
Mounting force
FM
120
135
160
kN
Acceleration
a
Device unclamped
50
m/s
2
Acceleration
a
Device clamped
100
m/s
2
Weight
m
Surface creepage distance
DS
53
mm
Air strike distance
Da
22
mm
3.6
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
kg
5STB 18U6500
On-state
Parameter
Symbol Conditions
min
Max. average on-state
current
ITAVM
1580
A
2480
A
29700
A
4400
kA2s
31800
A
4190
kA2s
Half sine wave, Tc = 70°C
Max. RMS on-state current ITRMS
typ.
max
Unit
Max. peak non-repetitive
surge current
ITSM
Limiting load integral
I2t
Max. peak non-repetitive
surge current
ITSM
Limiting load integral
I2t
On-state voltage
VT
IT = 1600 A, Tj= 110°C
1.93
V
Threshold voltage
VT0
IT = 1000 A - 3000 A, Tj= 110°C
1.2
V
Slope resistance
rT
Tj = 110°C
0.458
mΩ
Holding current
IH
Tj = 25°C
125
mA
Tj = 110°C
75
mA
max
Unit
250
A/µs
1000
A/µs
3
µs
800
µs
3200
µAs
max
Unit
tp = 10 ms, Tj = 110°C,
V = VR=0 V
tp = 8.3 ms, Tj = 110°C,
V = VR=0 V
Switching
Parameter
Symbol Conditions
Critical rate of rise of onstate current
di/dtcrit
Critical rate of rise of onstate current
di/dtcrit
Delay time
td
VD = 0.4⋅VRM, IFG = 2 A, tr = 0.5 µs
Turn-off time
tq
Tj = 110°C, ITRM = 2000 A,
VR = 200 V, diT/dt = -1.5 A/µs,
VD ≤ 0.67⋅VRM, dvD/dt = 20V/µs,
Recovery charge
Qrr
Tj = 110°C, ITRM = 2000 A,
VR = 200 V,
diT/dt = -1.5 A/µs
min
typ.
Cont.
Tj = 110°C, ITRM = 2000 A, f = 50 Hz
VD ≤ 0.67⋅VRM,
Cont.
IFG = 2 A, tr = 0.5 µs
f = 1Hz
2100
Triggering
Parameter
Symbol Conditions
Gate trigger voltage
VGT
Tj = 25°C
2.6
V
Gate trigger current
IGT
Tj = 25°C
400
mA
Gate non-trigger voltage
VGD
VD = 0.4 x VRM, Tvjmax = 110°C
0.3
V
Gate non-trigger current
IGD
VD = 0.4 x VRM
10
mA
Peak forward gate voltage
VFGM
12
V
Max. rated peak forward
gate current
IFGM
10
A
Peak reverse gate voltage
VRGM
10
V
3
W
Max. rated gate power loss PG
Max. rated peak forward
gate power
PGM
min
typ.
For DC gate current
see Fig. 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1037-02 Apr. 02
page 2 of 5
5STB 18U6500
Thermal
Parameter
Symbol Conditions
Operating junction
temperature range
Tj
min
max
Unit
110
°C
140
°C
Double side cooled
8
K/kW
Anode side cooled
16
K/kW
Cathode side cooled
16
K/kW
Double side cooled
1.6
K/kW
Single side cooled
3.2
K/kW
Storage temperature range Tstg
Thermal resistance junction RthJC
to case
Thermal resistance case to RthCH
heatsink
typ.
-40
Analytical function for transient thermal
impedance:
n
ZthJC(t) = å Ri(1 - e -t/τ i )
i =1
i
1
2
3
4
Ri(K/kW)
5.11
1.63
0.85
0.45
τi(s)
0.9531
0.1541
0.0211
0.0068
Fig. 1 Transient thermal impedance junction to case
Fig. 2 Isothermal on-state characteristics
Fig. 3 Isothermal on-state characteristics
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1037-02 Apr. 02
page 3 of 5
5STB 18U6500
Fig. 4 On-state power dissipation vs. mean onstate current. Switching losses excluded.
Fig. 5 Max. permissible case temperature vs.
mean on-state current.
Fig. 6 Surge on-state current vs. pulse length. Halfsine wave.
Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1037-02 Apr. 02
page 4 of 5
5STB 18U6500
IG (t)
100 %
90 %
IGM
IGon
diG/dt
tr
tp(IGM)
IGM
≈ 2..5 A
≥ 1.5 IGT
≥ 2 A/µs
≤ 1 µs
≈ 5...20µs
diG/dt
IGon
10 %
tr
t
tp (IGM)
tp (IGon)
Fig. 8 Recommendet gate current waveform.
Fig. 9 Max. rated peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-state
current.
Fig. 11 Peak reverse recovery current vs. decay rate
of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
[email protected]
www.abbsem.com
Doc. No. 5SYA1037-02 Apr. 02