6MBI150U2B-060 IGBT Modules IGBT MODULE (U series) 600V / 150A Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) I Item Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque Symbol VCES VGES IC ICP -IC -IC pulse PC Tj Tstg Viso Condition Continuous 1ms 1 device AC : 1 minute *1 Recommendable value : 2.5 to 3.5 N·m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. Rating 600 ±20 150 300 150 300 500 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Unit V V A W °C °C V V N·m 6MBI150U2B-060 IGBT Module Electrical characteristics (Tj=25°C unless otherwise specified) Item Symbol ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr Inverter Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Thermistor Reverse recovery time of FRD Lead resistance, terminal-chip * Resistance R lead R B B value Condition VCE=600V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=150mA Tj=25°C VGE=15V Tj=125°C Ic=150A Tj=25°C Tj=125°C VGE=0V, VCE=10V, f=1MHz V CC=300V IC=150A VGE=±15V RG= 24 Ω Tj=25°C Tj=125°C Tj=25°C Tj=125°C VGE= 0 V IF=150A IF=150A T=25°C T=100°C T=25/50°C Min. 6.2 - Characteristics Typ. Max. 1.0 200 6.7 7.7 2.30 2.60 2.55 1.80 2.05 12 0.40 1.20 0.22 0.60 0.16 0.48 1.20 0.07 0.45 2.10 2.45 2.15 1.60 1.65 0.35 3.4 - 465 3305 5000 495 3375 520 3450 Unit mA nA V V nF µs V µs mΩ Ω K * Biggest internal terminal resistance among arm. Thermal resistance Characteristics Item Symbol Condition Characteristics Typ. Max. Min. IGBT FWD Contact thermal resistance * Rth(c-f) With thermal compound * This is the value which is defined mounting on the additional cooling fin with thermal compound Thermal resistance ( 1 device ) Rth(j-c) - 0.05 0.25 0.48 - Equivalent Circuit Schematic 16,17,18 30,31,32 1 2 5 6 U 27,28,29 3 4 33,34,35 9 10 V 24,25,26 7 8 W 21,22,23 11 12 13,14,15 19 20 Unit °C/W 6MBI150U2B-060 IGBT Module Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Tj= 125°C / chip 400 400 VGE=20V15V Collector current : Ic [A] Collector current : Ic [A] VGE=20V 15V 12V 300 10V 200 12V 300 10V 200 100 100 8V 8V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage : VCE [V] 1 2 Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 5 Tj=25°C / chip 10 Collector - Emitter voltage : VCE [ V ] Tj=25°C Tj=125°C 300 200 100 0 8 6 4 Ic=300A Ic=150A Ic= 75A 2 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 10 15 20 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) VGE=0V, f= 1MHz, Tj= 25°C Vcc=300V, Ic=150A, Tj= 25°C Cies 10.0 Cres Coes 500 25 400 20 300 15 [V] Collector-Emitter voltage : VCE [ V ] 100.0 1.0 25 VGE 200 10 100 5 VCE 0 0.1 0 10 20 Collector-Emitter voltage : VCE [V] 30 0 0 200 400 600 Gate charge : Qg [ nC ] 800 Gate - Emitter voltage : VGE Collector current : Ic [A] 4 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) 400 Capacitance : Cies, Coes, Cres [ nF ] 3 Collector-Emitter voltage : VCE [V] 6MBI150U2B-060 IGBT Module Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=24Ω, Tj= 25°C Vcc=300V, VGE=±15V, Rg=24Ω, Tj=125°C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 1000 ton toff tr 100 tf 0 50 100 150 200 250 50 100 150 200 250 Collector current : Ic [ A ] Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=300V, Ic=150A, VGE=±15V, Tj= 25°C Vcc=300V, VGE=±15V, Rg=24Ω 300 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 15 1000 ton toff tr 100 tf Eoff(125°C) Eon(125°C) Eoff(25°C) 10 Eon(25°C) 5 Err(125°C) Err(25°C) 10 0 1 10 100 0 Gate resistance : Rg [ Ω ] 100 200 300 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) Vcc=300V, Ic=150A, VGE=±15V, Tj= 125°C +VGE=15V,-VGE <= 15V, RG >= 24Ω ,Tj <= 125°C 20 400 15 300 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] tf 0 300 10000 Switching time : ton, tr, toff, tf [ nsec ] 100 10 10 10 Eoff 5 toff ton tr 1000 Eon 200 100 Err 0 0 1 10 Gate resistance : Rg [ Ω ] 100 0 200 400 600 Collector - Emitter voltage : VCE [ V ] 800 IGBT Module 6MBI150U2B-060 Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.) chip Vcc=300V, VGE=±15V, Rg=24Ω 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 400 300 Tj=25°C Tj=125°C 200 100 trr (125°C) trr (25°C) 100 Irr (125°C) Irr (25°C) 10 0 0 1 2 0 3 100 Forward on voltage : VF [ V ] 100 Resistance : R [ kΩ ] 10.00 Thermal resistanse : Rth(j-c) [ °C/W ] 300 Temperature characteristic (typ.) Transient thermal resistance (max.) 1.00 FWD IGBT 0.10 0.01 0.001 200 Forward current : IF [ A ] 10 1 0.1 0.010 0.100 Pulse width : Pw [ sec ] 1.000 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [°C ] 6MBI150U2B-060 IGBT Module Outline Drawings, mm ( ) shows reference dimension.