RoHS RoHS 85FD(R)Series SEMICONDUCTOR Nell High Power Products Fast Recovery Diodes (Stud Version), 85A Available RoHS* COMPLIANT FEATURES Short reverse recovery time Low stored charge Wide current range Excellent surge capabilities Stud cathode and stud anode versions Voltage up to 1200 V RRM Compliant to RoHS directive 2002/95/EC TYPICAL APPLICATIONS DC power supplies lnverters Converters Choppers Ultrasonic systems Freewheeling diodes DO-203AB(DO-5) PRODUCT SUMMARY IF(AV) 85A MAJOR RATINGS AND CHARACTERISTICS SYMBOL I F(AV) CHARACTERISTICS Maximum T C 50 HZ I FSM A 85 ºC t rr A A 2s I 2√s 200 to 1200 V See Recovery Characteristics table ns -40 to 125 ºC Range TJ 85 85543 I 2√t V RRM UNIT 1308 1369 8554 7778 60 HZ 50 HZ 60 HZ I 2t 85FD(R) Range ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER 85FD(R) VRRM, MAXIMUM PEAK REPETITIVE REVERSE VOLTAGE TJ = -40°C TO 125°C V VRSM, MAXIMUM PEAK NON-REPETITIVE REVERSE VOLTAGE TJ = 25°C TO 125°C V 02 200 300 04 400 500 06 600 700 08 800 900 10 1000 1100 12 1200 1300 VOLTAGE CODE www.nellsemi.com Page 1 of 6 IFM, MAXIMUM PEAK REVERSE CURRENT AT RATED VRRM mA TJ = 25°C TJ = 125°C 0.1 20 RoHS 85FD(R)Series RoHS SEMICONDUCTOR Nell High Power Products FORWARD CONDUCTION TEST CONDITIONS SYMBOL PARAMETER Maximum average forward current at maximum case temperature I F(AV) 180° conduction, half sine wave I F(RMS) Maximum RMS forward current I FRM Maximum peak repetitive forward current Sinusoidal half wave, 30° conduction t = 10ms Maximum peak, one-cycle I FSM non-reptitive surge current I 2t I 2√t Maximum value of threshold voltage V F(TO) Maximum value of forward slope resistance Maximum forward voltage drop rF V FM A 85 133 ºC 470 A Sinusoidal half wave, 100% V RRM reapplied, initial T J =T J maximum 1308 t = 8.3ms Sinusoidal half wave, no voltage reapplied, initial T J =T J maximum t = 10ms t = 8.3ms 100% V RRM reapplied, initial T J =T J maximum t = 10ms no voltage reapplied, initial T J =T J maximum 6050 5498 8554 t = 8.3ms t = 8.3ms Maximum l²√t for fusing (1) UNIT 85 1100 t = 10ms Maximum l²t for fusing 85FD(R) 1151 A A 1369 A 2s 7778 t = 0.1 ms to 10 ms, no voltage reapplied T J = 125°C T J = 25°C; l FM = 265A 85543 A 2√s 1.128 V 2.11 mΩ 1.75 V Note : (1) l 2 t for time t x =1 2√t √t x SWITCHING PARAMETER Typical reverse recovery time Typical reverse recovered charge www.nellsemi.com SYMBOL t rr Q rr TEST CONDITIONS 85FD(R) 02 to 06 08 to 12 T J = 25°C, I F = 1A, I R = 1.0A, I RR = 250mA (RG#1 CKT) 200 500 T J = 25°C, I F = 1A to V R = 30V , -dl F /dt = 100 A/µs 50 120 T J = 25°C, -dl F /dt = 25 A/µs, l FM = π x rated l F(AV) 200 500 T J = 25°C, I F = 1A to V R = 30V, -dl F /dt = 100 A/µs 70 340 T J = 25°C, -dl F /dt = 25 A/µs, l FM = π x rated l F(AV) 240 Page 2 of 6 UNIT ns nC 1300 RoHS 85FD(R)Series RoHS SEMICONDUCTOR Nell High Power Products THERMAL AND MECHANICAL SPECIFCATIONS SYMBOL PARAMETER Maximum junction operating temperature range 85FD(R) TEST CONDITIONS TJ UNITS -40 to125 ºC Maximum storage temperature range T stg Maximum thermal resistance, junction to case R thJC Maximum thermal resistance, case to heatsink R thCS - 40 to150 0.30 DC operation K/W Mounting surface, smooth, flat and greased Maximum allowable mounting torque (+0%, -10%) Not lubricated threads, tighting on nut (1) 3.4(30) Lubricated thread, tighting on nut (1) 2.3(20) Not lubricated threads, tighting on hexagon (2) 4.2(37) Lubricated thread, tighting on hexagon (2) 3.2(28) g 25 oz. 0.88 DO-203AB (DO-5) Approximate weight Case style 0.25 JEDEC N·m (lbf · in) Note : (1) Recommended for pass-through holes (2) Recommended for holed threaded heatsinks RthJC CONDUCTION 85FD(R) CONDUCTION ANGEL SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180˚ 0.37 0.21 120˚ 60˚ 0.39 0.37 0.82 1.41 0.82 1.41 30˚ Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC ORDERING INFORMATION SCHEME 85 FD R Current 85 = 85A Diode type FD = Fast Recovery Diode Polarity R = Reverse, Anode on Stud None = standard, Cathode on Stud Voltage 06 = 600V 08 = 800V 10 = 1000V 12 = 1200V Trr value A = 200 ns Max. B = 500 ns Max. www.nellsemi.com Page 3 of 6 06 A TEST CONDUCTIONS UNITS T J = 150°C K/W RoHS 85FD(R)Series RoHS SEMICONDUCTOR Nell High Power Products th 15 SA 4- 6 -▲ 5▲R = 2. 3. ▲R 0▲R 0- ▲R K/ W R 8- ▲ R 1 0 -▲ R RMS Limit 10 1 5 -▲R 20 -▲R 5 K/W R ø =180° 120° 60° 30° ▲R 20 ▲R 0▲R 51. 85FD(R)Series T J = 150°C Conduction angle ø 25 1. Maximum average forward power loss (W) Fig.1 Current rating nomogram (Sinusoidal Waveforms) 180° 0.37 120° 0.39 60° 0.82 30° 1.41 Conduction Angle 0 0 4 2 6 8 10 12 14 Average forward current (A) 16 10 20 30 40 50 60 70 80 90 100 Maximum allowable ambient temperature (°C) R ø =180° 120° 60° 30° 20 th DC 4- ▲ 5- ▲ 6- ▲ 15 8 -▲ RMS Limit 10 5 ø -▲ R K/ K/W W R R R DC 0 180° 0.21 120° 0.37 15 -▲R 60° 0.82 30° 1.41 0 5 15 10 20 25 10 20 30 40 50 60 70 80 90 100 Maximum allowable ambient temperature (°C) Fig. 4 Maximum forward voltage vs. forward current. 10 3 85FD(R)Series Instantaneous forward current (A) Maximum average forward power loss (W) .0 0 ø =180° 120° 60° 30° ø =DC 180° 120° 60° 30° 10 3 10 2 10 2 10 3 10 2 T J = 125°C 10 T J = 25°C 1 10 4 0 Average forward current (A) www.nellsemi.com =3 R 10 -▲R 85FD(R)Series T J = 125°C 10 SA Conduction Angle Fig .3 Maximum high level forward power loss vs. average forward current 10 ▲R 25 Average forward current (A) 10 4 5- 1 .0 1. -▲ R 0 - 5 -▲ ▲R R 2. ▲R 85FD(R)Series T J = 150°C 30 Conduction angle ø 35 0. Maximum average forward power loss (W) Fig.2 Current rating nomogram (Rectangular waveforms) 1 2 3 Instantaneous forward voltage (V) Page 4 of 6 4 RoHS 85FD(R)Series RoHS SEMICONDUCTOR Nell High Power Products Fig .6 Typical reverse recovery time vs. rate of fall of forward current. 125 10 4 85FD(R)Series 110 85FD(R), 200 to 600V Reverse recovery time (ns) Maximum allowable case temperature (˚C) Fig.5 Average forward current vs. maximum allowable case temperature. ø =180° 120° 60° 30° 100 90 80 ø =180° 120° 90° 60° 30° 70 60 DC 400 l F = 1A T J = 25°C 10 2 l F = 265A l F = 50A l F = 1A 40 50 10 40 0 20 40 60 80 100 120 4 1 140 Average forward current (A) 40 10 100 Rate of fall of forward current (A/µs) Fig .7 Typical recovered charge vs. rate of fall of forward current. Fig .8 Typical reverse recovery time vs. rate of fall of forward current. 10 4 5000 85FD(R), 200 to 600V 10 3 85FD(R), 800 to 1200V Reverse recovery time (ns) Recovered charge (nC) T J = 125°C l F = 265A l F = 50A l F = 265A l F = 50A l F = 1A 10 2 TJ 10 = 12 5° C TJ 5 =2 °C 4000 T J = 125°C l F = 265A l F = 50A l F = 1A 1000 400 300 T J = 25°C l F = 265A 200 l F = 50A l F = 1A 1 4 1 10 40 100 100 4 1 Rate of fall of forward current (A/µs) 10 5 Recovered charge (nC) 85FD(R), 800 to 1200V 10 4 l F = 265A l F = 50A l F = 1A 10 3 TJ =1 25 °C 10 2 TJ =2 5° C 10 4 10 40 Rate of fall of forward current (A/µs) www.nellsemi.com 40 Rate of fall of forward current (A/µs) Fig .9 Typical recovered charge vs. rate of fall of forward current. 1 10 Page 5 of 6 100 100 RoHS 85FD(R)Series RoHS SEMICONDUCTOR Nell High Power Products DO-203AB (DO-5) 17.3(0.68) 19(0.75) Ø15(Ø0.6) 0.9/1.5 (0.03/0.06) 11(0.43) 9.4/10.2 (0.37/0.4) 25.4(1.0) 6.1/6.7 (0.24/0.26) (3.0(0.11)MIN Ø4.3(Ø01.7) 1/4” 28UNF-2A For metric devices: M6×1.0 85FD.. AII dimensions in millimeters (inches) www.nellsemi.com Page 6 of 6 85FD(R)..