AOSMD AO4286

AO4286
100V N-Channel MOSFET
General Description
Product Summary
The AO4286 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
VDS
100V
4A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 68mΩ
RDS(ON) (at VGS=4.5V)
< 92mΩ
100% UIS Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
Units
V
±20
V
4
ID
TC=70°C
C
Maximum
100
3
IDM
A
25
Avalanche Current C
IAS
4
A
Avalanche energy L=0.1mH C
TA=25°C
EAS
0.8
mJ
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 0: Nov. 2012
2.5
PD
TA=70°C
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
1.6
RθJA
RθJL
-55 to 150
Typ
42
70
20
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°C
Max
50
85
30
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO4286
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
100
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS，ID=250µA
1.7
ID(ON)
On state drain current
VGS=10V, VDS=5V
25
TJ=55°C
VGS=10V, ID=4A
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=3A
±100
nA
2.25
2.9
V
55.5
68
104
127
72.5
92
mΩ
1
V
3
A
A
Forward Transconductance
VDS=5V, ID=4A
13
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.76
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Units
µA
5
gFS
Coss
Max
V
VDS=100V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
S
390
pF
30
pF
3
pF
7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
5.8
10
nC
Qg(4.5V) Total Gate Charge
2.8
5
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=50V, ID=4A
VGS=10V, VDS=50V, RL=12.5Ω,
RGEN=3Ω
1.1
nC
1.2
nC
6
ns
2.5
ns
18
ns
tf
Turn-Off Fall Time
2.5
ns
trr
Body Diode Reverse Recovery Time
IF=4A, dI/dt=500A/µs
15
Qrr
Body Diode Reverse Recovery Charge IF=4A, dI/dt=500A/µs
53
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Nov. 2012
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Page 2 of 5
AO4286
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
10V
6V
VDS=5V
4.5V
20
15
15
10
ID(A)
ID (A)
4V
10
3.5V
125°C
5
5
25°C
VGS=3V
0
0
0
1
2
3
4
0
5
90
2
3
4
5
6
Normalized On-Resistance
2.4
VGS=4.5V
80
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
70
60
VGS=10V
50
2.2
2
VGS=10V
ID=4A
1.8
17
5
2
10
=4.5V
1.6
1.4
VGS
ID=3A
1.2
1
0.8
40
0
2
0
4
6
8
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
180
1.0E+01
ID=4A
160
1.0E+00
40
125°C
120
125°C
1.0E-01
IS (A)
RDS(ON) (mΩ
Ω)
140
100
80
1.0E-02
25°C
1.0E-03
60
1.0E-04
25°C
40
20
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Nov. 2012
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO4286
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
500
VDS=50V
ID=4A
450
Ciss
400
Capacitance (pF)
VGS (Volts)
8
6
4
2
350
300
250
200
Coss
150
100
Crss
50
0
0
0
2
4
6
0
20
40
60
80
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
200
100.0
10µs10µs
RDS(ON)
100µs
1.0
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
160
Power (W)
10.0
ID (Amps)
100
TJ(Max)=150°C
TA=25°C
17
5
2
10
120
80
40
DC
0.0
0
0.01
0.1
1
10
VDS (Volts)
100
1000
0.0001 0.001
0.01
0.1
1
0
10
100
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
40
RθJA=85°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Nov. 2012
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Page 4 of 5
AO4286
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: Nov. 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5