AP09N20H/J
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristics
BVDSS
RDS(ON)
ID
D
200V
380mΩ
8.6A
G
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G D
The TO-252 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50
watts. The through-hole version (AP09N20J) is available for lowprofile applications.
S
TO-252(H)
G
D S
TO-251(J)
Rating
Units
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
± 30
8.6
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
5.5
A
36
A
69
W
0.55
W/℃
40
mJ
8.6
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
2
A
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Value
Unit
Rthj-c
Symbol
Thermal Resistance Junction-case
Max.
1.8
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Parameter
Data & specifications subject to change without notice
201112031
AP09N20H/J
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
200
-
0.24
-
V
V/℃
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5A
-
-
380
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
3.7
-
S
VDS=200V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=160V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= ± 30V
-
-
±100
nA
ID=8.6A
-
23
37
nC
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
VGS=0V, ID=1mA
Min.
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=160V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
13
-
nC
3
td(on)
Turn-on Delay Time
VDD=100V
-
12
-
ns
tr
Rise Time
ID=8.6A
-
74
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
36
-
ns
tf
Fall Time
RD=11.6Ω
-
44
-
ns
Ciss
Input Capacitance
VGS=0V
-
500
800
pF
Coss
Output Capacitance
VDS=25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Min.
Typ.
IS=8.6A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
3
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=8.6A, VGS=0V,
-
225
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
2260
-
nC
Notes:
1.Pulse width limited by safe operating area.
o
2.Starting Tj=25 C , VDD=50V , L=1mH , RG=25Ω , IAS=8.6A.
3.Pulse width <300us , duty cycle <2%.
AP09N20H/J
18
10
10V
8.0V
T C =25 o C
16
8
12
ID , Drain Current (A)
14
ID , Drain Current (A)
10V
8.0V
7.0V
T C =150 o C
7.0V
10
8
6
6
4
5.0V
4
2
5.0V
V G =4.0V
2
V G =4.0V
0
0
0
2
4
6
8
10
0
12
2
4
6
8
10
12
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.8
3
2.4
I D =5A
V GS =10V
Normalized RDS(ON)
Normalized BVDSS (V)
2
2
1
1.6
1.2
0.8
0.4
0
0
-50
0
50
100
T j , Junction Temperature (
o
150
-50
0
50
100
150
o
C)
T j , Junction Temperature ( C )
Fig 3. Normalized BV DSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
5
7
6
4
VGS(th) (V)
5
IS(A)
4
3
o
o
T j =150 C
T j =25 C
3
2
2
1
1
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP09N20H/J
15
f=1.0MHz
1000
Ciss
V DS =100V
V DS =120V
V DS =160V
9
C (pF)
VGS , Gate to Source Voltage (V)
I D =8.6A
12
Coss
100
6
Crss
3
0
10
0
6
12
18
24
30
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (R thjc)
100
1ms
10
ID (A)
10ms
100ms
1s
1
T c =25 o C
Single Pulse
DC
0
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q