Data Sheet BOOST CONTROLLER AP3039 General Description Features AP3039 is a current mode high voltage low-side Nchannel MOSFET controller which is ideal for boost regulators. It contains all the features needed to implement single ended primary topology DC/DC converters. · · · · · · · · · The input voltage range of AP3039 is from 5V to 27V. Its operation frequency is adjustable from 200kHz to 1MHz. The AP3039 has UVLO (Under Voltage Lock Out) circuit. It uses two external resistors to set the UVLO voltage. The AP3039 also has an over output voltage protection to limit the output voltage. The OVP voltage can be set through external resistors. If the output voltage is higher than the OVP high threshold point, it will disable the driver, when the output voltage drops to the OVP low threshold point, it will enable the driver. It also features a soft start to reduce the inrush current when power on, the soft start time can be set through an external capacitor. Input Voltage Range 5V to 27V 0.6A Peak MOSFET Gate Driver 20ns Quick MOSFET Gate Driver Duty Cycle Limit of 90% Programmable UVLO Programmable Over Voltage Protection Cycle by Cycle Current Limit Adjustable Soft-Start Adjustable Operation Frequency from 200kHz to 1MHz Applications · · · LED Lighting Notebook LCD Display Modules The AP3039 is available in QFN-3x3-16 and SOIC-14 packages. QFN-3x3-16 SOIC-14 Figure 1. Package Types of AP3039 Dec. 2009 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 1 Data Sheet BOOST CONTROLLER AP3039 Pin Configuration FN Package (QFN-3x3-16) Pin 1 Dot by Marking OV UVLO SS COMP 16 EN 1 VIN 2 NC 3 VCC 4 15 14 13 EP 5 6 7 12 NC 11 FB 10 SHDN 9 AGND 8 Exposed PAD OUT PGND RT CS M Package (SOIC-14) UVLO 1 14 SS OV 2 13 COMP EN 3 12 FB VIN 4 11 SHDN VCC 5 10 AGND OUT 6 9 CS PGND 7 8 RT Figure 2. Pin Configuration of AP3039 (Top View) Dec. 2009 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 2 Data Sheet BOOST CONTROLLER AP3039 Pin Description Pin Number Pin Name Function 16-pin 14-pin 1 3 EN Enable pin 2 4 VIN Input supply pin, must be locally bypassed NC No connection (for QFN-3x3-16 package only) 3, 12 4 5 VCC 6V linear regulator output pin. VCC is used to bias the gate driver for the external MOSFET. If VIN is less than 8.5V, the VCC is equal to VIN minus drop voltage across bypass switch. If VIN is less than 6V, connect VCC to VIN. This pin should be bypassed to GND (recommend to connect with AGND pin) with a ceramic capacitor 5 6 OUT Connect this pin to the gate of external MOSFET, the gate driver has 0.6A peak current capability 6 7 PGND 7 8 RT An external resistor connected from this pin to GND to set the operating frequency 8 9 CS Sense switch current pin, which is used for current mode control and for current limit 9 10 AGND Reference ground 10 11 SHDN This pin can be connected to current matched chip and receives error signal used to shut down the system 11 12 FB 13 13 COMP 14 14 SS An external soft start time capacitor is connected from this pin to ground and is charged by internal 12µA current source to control regulator soft start time 15 1 UVLO Two resistors connected from this pin to ground and the VIN pin respectively to set start up and shutdown level 16 2 OV Over output voltage protection pin EP Exposed backside pad. Solder to the circuit board ground plane with sufficient copper connection to ensure low thermal resistance (for QFN-3x3-16 package only) Power ground Voltage Feedback Pin. The reference voltage is 500mV Compensation Pin. This pin is the output of the internal Error Amplifier Dec. 2009 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 3 Data Sheet BOOST CONTROLLER AP3039 Functional Block Diagram REFERENCE VIN EN UVLO 2 (4) 1 (3) 15 (1) R 22µA CLK 5 (6) Q DRIVER 6 (7) S 16 (2) 22µA 110mV LOGIC LEB 10 (11) VCC 3V REFERENCE EN 1.25V SHDN 4 (5) REGULATOR 1.25V OV BYPASS SWITCH 1.25V 8 (9) OUT PGND CS + SAW + Σ 13 (13) COMP OSTD 0.5V EA 11 (12) 12µA 14 (14) RT 7 (8) OSL FB SS CLK 9 (10) AGND SAW A (B) A QFN-3x3-16 B SOIC-14 Figure 3. Functional Block Diagram of AP3039 Dec. 2009 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 4 Data Sheet BOOST CONTROLLER AP3039 Ordering Information AP3039 - Circuit Type G1: Green Package TR: Tape and Reel Blank: Tube FN: QFN-3x3-16 M: SOIC-14 Package Temperature Range QFN-3x3-16 o SOIC-14 -40 to 85 C Part Number Marking ID Packing Type AP3039FNTR-G1 B2A Tape & Reel AP3039M-G1 3039M-G1 Tube AP3039MTR-G1 3039M-G1 Tape & Reel BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Dec. 2009 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 5 Data Sheet BOOST CONTROLLER AP3039 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Input Voltage VIN 30 V VCC Pin Voltage VCC 10 V OUT Pin Voltage VOUT 10 V VFB 7 V VUVLO 7 V VCS 7 V SHDN Pin Voltage VSHDN 7 V Enable Pin Voltage VEN VIN V OV Pin Voltage VOV 7 V Thermal Resistance (Junction to Ambient, no Heat sink) θJA Operating Junction Temperature TJ 150 oC TSTG -65 to 150 oC TLEAD 260 o ESD (Machine Model) 200 V ESD (Human Body Model) 2000 V Feedback Pin Voltage UVLO Pin Voltage CS Pin Voltage Storage Temperature Range Lead Temperature (Soldering, 10sec) QFN-3x3-16 60 SOIC-14 102 oC/W C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Input Voltage Operating Frequency Operating Temperature Dec. 2009 Rev. 1. 4 Symbol Min Max Unit VIN 5 27 V f 200 1000 kHz TA -40 85 oC BCD Semiconductor Manufacturing Limited 6 Data Sheet BOOST CONTROLLER AP3039 Electrical Characteristics (VIN=12V, VEN =VIN, TA=25oC, unless otherwise specified.) Parameter Input Voltage Symbol VIN Feedback Voltage VFB FB Pin Bias Current IFB Quiescent Current IQ Shutdown Quiescent Current ISHDN VCC Voltage VCC VCC Current Limit ICC-LIM Drop Voltage Across Bypass Switch VIN-VCC Bypass Switch Turn-off Threshold VBYP-HI Bypass Switch Threshold Hysteresis Conditions Min Typ Max VCC=VIN 5 6 VCC bypassed to GND through a 0.47µF capacitor 6 27 Unit V 490 500 510 mV 35 100 nA No switching 3 5 mA VEN=0V 1 2 µA 6 6.5 9V≤VIN≤27V 5.5 6V≤VIN<9V 5 V 50 mA ICC=0mA, fOSC≤200kHz, 6V≤VIN<8.5V 300 mV VIN increasing 8.7 V VBYP-HYS VIN decreasing 260 mV VCC Pin UVLO Rising Threshold VCC-HI 4.7 V VCC Pin UVLO Falling Hysteresis VCC-HYS 300 mV Oscillator Frequency UVLO Threshold fOSC Adjustable, RT=51kΩ to 150kΩ VUVLO 200 1.22 1.25 1000 kHz 1.28 V µA UVLO Hysteresis Current Source IHYS Current Limit Threshold Voltage VCS 90 110 130 mV RT Voltage VRT 1.20 1.25 1.30 V Error Amplifier Transconductance GS EN Pin Threshold Voltage 22 VEH 2.0 V VEL SHDN Pin Threshold Voltage µA/V 470 0.5 2.0 VIH V 0.5 VIL Dec. 2009 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 7 Data Sheet BOOST CONTROLLER AP3039 Electrical Characteristics (Continued) (VIN=12V, VEN =VIN, TA=25oC, unless otherwise specified.) Parameter OV Threshold OV Hysteresis Current Source Maximum Duty Cycle Soft Start Current Source Symbol Conditions Min Typ Max Unit VOV 1.25 V IOV-HYS 22 µA DMAX 90 ISS 12 µA 93 % Out Pin Rise Time tRISE Out Pin Load =1nF 20 ns Out Pin Fall Time tFALL Out Pin Load =1nF 20 ns OUT Dropout Voltage (VCC-VOUT) VOUT-H IOUT=50mA 0.25 0.75 V OUT Low Voltage Level (VOUT) VOUT-L IOUT=100mA 0.25 0.75 V Thermal Shutdown Temperature TOTSD 160 Thermal Shutdown Hysteresis THYS 20 Dec. 2009 Rev. 1. 4 o C oC BCD Semiconductor Manufacturing Limited 8 Data Sheet BOOST CONTROLLER AP3039 Typical Performance Characteristics 95 95 94 IOUT =160mA 94 fOSC =400kHz 93 IOUT = 200mA 93 fOSC= 1MHz 92 Efficiency (%) Efficiency (%) 92 91 90 89 91 90 89 88 88 87 VIN=12V, VOUT=33V, fOSC=1MHz L=22µH, CIN=10µF, COUT=10µF 86 87 IOUT=160mA, VOUT=33V, TA=25 C 86 L=22µH, CIN=10µF; COUT=10µF 85 85 -50 -25 0 25 50 75 100 125 O 6 9 12 15 Temperature ( C) Figure 4. Efficiency vs. Case Temperature 21 24 27 Figure 5. Efficiency vs. Input Voltage 95 92.0 90 91.5 Efficiency (%) 85 Efficiency (%) 18 Input Voltage (V) o 80 75 91.0 90.5 90.0 70 O O VIN=12V, VOUT=33V, fOSC=1MHz, TA=25 C 65 60 20 VIN=12V, VOUT=33V, fOSC=1MHz, TA=25 C 89.5 L=22µH, CIN=10µF, COUT=10µF L=22µH, CIN=10µF, COUT=10µF 40 60 80 100 120 140 160 180 89.0 16 200 18 20 22 24 26 28 30 32 34 Output Voltage (V) Output Current (mA) Figure 6. Efficiency vs. Output Current Figure 7. Efficiency vs. Output Voltage Dec. 2009 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 9 Data Sheet BOOST CONTROLLER AP3039 2.0 6.5 1.8 6.4 1.6 6.3 1.4 6.2 VCC Voltage (V) Quiescent Current (mA) Typical Performance Characteristics (Continued) 1.2 1.0 0.8 O -50 C O 25 C O 85 C O 125 C 0.6 0.4 0.2 0.0 5 10 15 20 6.1 6.0 5.9 O -50 C O 25 C O 85 C O 125 C 5.8 5.7 5.6 25 5.5 30 6 9 12 15 18 21 24 27 Input Voltage (V) Input Voltage (V) Figure 9. VCC Voltage vs. Input Voltage Figure 8. Quiescent Current vs. Input Voltage 1.20 1200 1100 1.15 1000 Frequency (kHz) Frequency (MHz) 900 1.10 1.05 1.00 800 700 600 500 400 0.90 -50 300 RT=51kΩ 0.95 -25 0 25 50 75 100 200 100 40 125 80 120 160 200 240 280 320 360 400 RT (kΩ) O Case Temperature ( C) Figure 10. Switching Frequency vs. Case Temperature Dec. 2009 Rev. 1. 4 Figure 11. Switching Frequency vs. RT Value BCD Semiconductor Manufacturing Limited 10 Data Sheet BOOST CONTROLLER AP3039 Typical Performance Characteristics (Continued) 1.260 1.30 1.29 1.255 UVLO Voltage (V) RT Voltage (V) 1.28 1.27 1.26 1.25 1.24 O -50 C O 25 C O 85 C O 125 C 1.23 1.22 1.21 1.20 5 10 15 20 25 1.250 1.245 O -50 C O 25 C O 85 C O 125 C 1.240 1.235 1.230 30 5 10 Input Voltage (V) 1.280 25.0 1.275 24.5 1.270 24.0 1.265 1.260 1.255 1.250 O -40 C O 25 C O 85 C O 125 C 1.245 1.240 1.235 10 15 20 25 30 23.5 23.0 22.5 22.0 O 25 -40 C O 25 C O 85 C O 125 C 21.5 21.0 20.5 20.0 5 20 Figure 13. UVLO Voltage vs. Input Voltage UVLO Current(µA) OV Voltage (V) Figure 12. RT Voltage vs. Input Voltage 1.230 15 Input Voltage (V) 30 5 10 15 20 25 30 Input Voltage (V) Input Voltage (V) Figure 15. UVLO Current vs. Input Voltage Figure 14. OV Voltage vs. Input Voltage Dec. 2009 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 11 Data Sheet BOOST CONTROLLER AP3039 25.0 0.510 24.5 0.508 24.0 0.506 23.5 0.504 FB Voltage (V) OV Current (µA) Typical Performance Characteristics (Continued) 23.0 22.5 22.0 O -50 C O 25 C O 85 C O 125 C 21.5 21.0 20.5 20.0 5 10 15 20 25 0.502 0.500 0.498 0.496 0.494 0.492 0.490 -50 30 -25 0 75 100 125 Figure 17. Feedback Voltage vs. Case Temperature 450 400 425 375 OUT Dropout Voltage (mV) 400 OUT Low Voltage (mV) 50 O Figure 16. OV Current vs. Input Voltage 375 350 325 300 275 250 225 200 350 325 300 275 250 225 200 175 175 150 -50 25 Case Temperature ( C) Input Voltage (V) -25 0 25 50 75 100 150 -50 125 -25 0 25 50 75 100 125 o O Case Temperature ( C) Temperature ( C) Figure 19. OUT Dropout Voltage vs. Case Temperature Figure 18. OUT Low Voltage vs. Case Temperature Dec. 2009 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 12 Data Sheet BOOST CONTROLLER AP3039 Application Information For Input Hysteresis Voltage VIN-HYSTERESIS=22µA*R1 Operation AP3039 is a boost DC-DC controller with adjustable operation frequency. Current mode control scheme provides excellent line and load regulation. Operation can be best understood by referring to Figure 3. Over Voltage Protection AP3039 has an over voltage protection (OVP) circuit. The OV Pin is connected to the center tap of R3 and R4 resistor voltage-divider from the high voltage output to GND (see Figure 20). When the loop is open or the output voltage becomes excessive in any case, result the voltage on OV pin exceeds 1.25V, all functions of AP3039 will be disabled, and the output voltage will fall. OVP hysteresis is accomplished with an internal 22µA current source and the operation mode is the same as UVLO. The formula for OVP can be expresses as blow: For OVP Voltage VOVP=1.25V*(R3+R4)/R4 For OVP Hysteresis Voltage VOVP-HYSTERESIS=22µA*R3 At the start of each oscillator cycle, the SR latch is set and external power switch Q1 (see Figure 20) turns on and the switch current will increase linearly. The voltage on external sense resistor RCS (see Figure 20), connected from CS pin to GND, is proportional to the switch current. This voltage is added to a stabilizing ramp and the result is fed into the non-inversion input of the PWM comparator. When this non-inversion input voltage exceeds inversion input voltage of PWM comparator which is the output voltage of the error amplifier EA, the SR latch is reset and the external power switch turns off. The voltage level at inversion input of PWM comparator sets the peak current level to keep the output voltage in regulation. This voltage level is the amplified signal of the voltage difference between feedback voltage and reference voltage of 0.5V. So, a constant output current can be provided by this operation mode. Frequency Selection An external resistor RT, connected from RT pin to GND, is used to set the operating frequency (see Figure 20). Operation frequency range is from 200kHz to 1MHz (see Table 1). High frequency operation optimizes the regulator for the smallest component size, while low frequency operation can reduce the switch losses. Input Under-Voltage Detector AP3039 contains an Under Voltage Lock Out (UVLO) circuit. Two resistors R1 and R2 are connected from UVLO pin to ground and VIN pin respectively (see Figure 20). The resistor divider must be designed such that the voltage on the UVLO pin is higher than 1.25V when VIN is in the desired operating range. If the voltage on the pin is below under voltage threshold, all functions of AP3039 are disabled, but the system will remain in a low power standby state. UVLO hysteresis is accomplished through an internal 22µA current source which switched on or off 22µA current into the impedance of the set-point divider. When the UVLO threshold is exceeded, the current source is activated to instantly raise the voltage on the UVLO pin. When the UVLO pin voltage falls below the threshold the current source is turned off, causing the voltage on the UVLO pin to fall. The formula for UVLO can be expresses as blow: For Input Threshold Voltage VIN_THRESHOLD=1.25V*(R1+R2)/R2 Table 1. Frequency Selection Dec. 2009 Rev. 1. 4 Resistance of RT (kΩ) Operating Frequency (kHz) 390 200 147 400 95 600 68 800 51 1000 BCD Semiconductor Manufacturing Limited 13 Data Sheet BOOST CONTROLLER AP3039 Application Information (Continued) VCC Pin Application Description The AP3039 includes an internal low dropout linear regulator with the output pin VCC. This pin is used to power internal PWM controller, control logic and MOSFET driver. On the condition that VIN≥8.5V, the regulator generates a 6V supply. If 6V≤VIN≤8.5V, the VCC is equal to VIN minus drop voltage across bypass switch. When VIN is less than 6V, connect VCC to VIN. Soft Start AP3039 has a soft start circuit to limit the inrush current during startup. The time of soft start is controlled by an internal 12µA current source and an external soft start capacitor CSS connected from SS pin to GND (see Figure 20). The effective CSS voltage for Soft Start is from 0 to 2.3V, the time of Soft Start is: tSS = CSS*2.3V/12µA Typical Application VIN : 6V to 27V L VOUT D1 CIN R1 COUT VIN R2 UVLO OUT VCC CS CV Q1 R5 RCS R4 EN OFF ON RT CSS RC R3 RT OV SS FB SHDN COMP OFF ON R6 GND CC U1 AP3039 Figure 20. Application Circuit 1 of AP3039 (Note 2) Dec. 2009 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 14 Data Sheet BOOST CONTROLLER AP3039 Typical Application (Continued) L VIN : 6V to 27V D1 CIN R1 VIN R3 Q1 OUT UVLO 1W or 3W LED CS VCC CV R2 RCS OFF ON EN R4 COUT OV RT RT SS SHDN ON OFF CSS FB COMP U1 AP3039 GND RC R5 CC Figure 21. Application Circuit 2 of AP3039 (Driving Single 1W or 3W LED Lighting, Note 3) L VIN : 6V to 27V D1 CIN R1 VIN Q1 OUT R3 UVLO CS VCC CV R2 RCS OFF ON EN R4 COUT OV RT RT SS SHDN ON OFF CSS FB COMP RC GND U1 AP3039 R5 CC Figure 22. Application Circuit 3 of AP3039 (Backlight Driver, Note 4) Dec. 2009 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 15 Data Sheet BOOST CONTROLLER AP3039 Typical Application (Continued) Note 2: The output voltage is decided by R5, R6 and the internal 0.5V reference. The output voltage accuracy is determined by the accuracy of R5 and R6, for which the precise resistors are preferred. VOUT= 0.5V * (R5 + R6 ) R6 Note 3: In this application, the LED current is controlled by the feedback resistor R5. LEDs current accuracy is determined by regulator‘s feedback threshold accuracy and is independent of the LEDs‘ forward voltage variation. So the precise resistors are the better choices. The resistance of R5 is in inverse proportion to the LED current since the feedback reference is fixed at 0.5V. The relation of R5 and the LED current can be expressed as below: R5= 0.5V ILED Note 4: The summation of LED current is determined by R5 and internal 0.5V reference same as the illustration in Figure 22. More detailed application information please refer to application note. Dec. 2009 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 16 Data Sheet BOOST CONTROLLER AP3039 Mechanical Dimensions QFN-3x3-16 2.900(0.114) 3.100(0.122) Pin 1 Identification Pin 1 Identification Unit: mm(inch) Pin1 0.350(0.014) 0.450(0.018) 0.180(0.007) 2.900(0.114) 3.100(0.122) 0.280(0.011) 0.050(0.020) BSC Bottom View Exposed Pad 1.500(0.059) Ref 1.500(0.059) Ref 0.700(0.028) 0.900(0.035) 0.178(0.007) 0.228(0.009) 0.000(0.000) 0.050(0.002) Dec. 2009 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 17 Data Sheet BOOST CONTROLLER AP3039 Mechanical Dimensions (Continued) Unit: mm(inch) SOIC-14 A 0.700(0.028) 0.100(0.004) 0.250(0.010) 7° 0.280(0.011) ×45° 0.480(0.019)×45° 8° 8° 0° 8° 9.5° 7° 0.330(0.013) 0.510(0.020) 8° 0.190(0.007) 0.250(0.010) 1.350(0.053) 1.750(0.069) 8.550(0.337) 8.750(0.344) 3.800(0.150) 4.000(0.157) 1.270(0.050) 1.000(0.039) A 6.200(0.244) 1.300(0.051) 5.800(0.228) 0.250(0.010) 0.200(0.008)MIN 20:1 R0.200(0.008) R0.200(0.008) 1° 5° 0.500(0.020) 0.600(0.024) 0.250(0.010) φ 2.000(0.079) Depth 0.060(0.002) 0.100(0.004) Note: Eject hole, oriented hole and mold mark is optional. Dec. 2009 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 18 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not assume assume any any responsibility responsibility for for use use of of any any its its products products for for any any particular purpose, particular purpose, nor nor does does BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited assume assume any any liability liability arising arising out out of of the the application application or or use use of any of any its its products products or or circuits. circuits. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not convey convey any any license license under under its its patent patent rights rights or or other rights other rights nor nor the the rights rights of of others. others. MAIN SITE SITE MAIN - Headquarters BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-basedLimited Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Tel: Fax: +86-21-24162277 800,+86-21-24162266, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 REGIONAL SALES OFFICE Shenzhen OfficeSALES OFFICE REGIONAL - Wafer FabSemiconductor Manufacturing Limited BCD Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. - IC Design Group 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 1491,YiFax: 0008200233, China 8F, Zone B, 900, Shan+86-21-5450 Road, Shanghai Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 Taiwan Office Shanghai Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Semiconductor Shenzhen SIM-BCD Office Office (Taiwan) Company Limited Room E, 5F, Noble Center, No.1006,Manufacturing 3rd Fuzhong Road, Futian District,Office Shenzhen, 4F, 298-1, Guang Road,(Taiwan) Nei-Hu District, Taipei, Shanghai SIM-BCD Semiconductor Co., Ltd. Shenzhen BCDRui Semiconductor Company Limited 518026, China Taiwan Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Tel: +86-755-8826 Tel: +886-2-2656 2808 Room E, 5F, Noble 7951 Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Taiwan Fax: +86-755-88267951 7865 Fax: +886-2-2656 28062808 Tel: +86-755-8826 Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 USA Office BCD Office Semiconductor Corp. USA 30920Semiconductor Huntwood Ave.Corporation Hayward, BCD CA 94544, USA Ave. Hayward, 30920 Huntwood Tel :94544, +1-510-324-2988 CA U.S.A Fax:: +1-510-324-2988 +1-510-324-2788 Tel Fax: +1-510-324-2788