APM6928 N-Channel Enhancement Mode MOSFET Features • Pin Description TSSOP-8 30V/4A , RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=25mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged D1 1 8 D2 S1 2 7 S2 S1 3 6 S2 G1 4 5 G2 TSSOP-8 Package Top View Applications • D2 D1 Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. Ordering and Marking Information APM 6928 Tem p. R ange P ackage C ode A P M 6928 XXXXX S2 S1 S2 N-Channel MOSFET X X X X X - D a te C o d e Absolute Maximum Ratings Symbol S1 P ackage C ode O : T S S O P -8 O p e r a tio n J u n c tio n T e m p . R a n g e C : - 5 5 t o 1 5 0 °C H a n d lin g C o d e TR : Tape & R eel H a n d lin g C o d e A P M 6928 O : G2 G1 (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID* Maximum Drain Current – Continuous 4 IDM Maximum Drain Current – Pulsed 20 Unit V A * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 1 www.anpec.com.tw APM6928 Absolute Maximum Ratings Cont. Symbol Parameter PD Maximum Power Dissipation TJ Maximum Junction Temperature Storage Temperature Range RθjA Thermal Resistance – Junction to Ambient Electrical Characteristics Parameter Rating Unit 1.0 W 150 °C -55 to 150 °C 125 °C/W TA=25°C TSTG Symbol (TA = 25°C unless otherwise noted) (TA = 25°C unless otherwise noted) Test Condition APM6928 Min. Typ. Max. Unit Static BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current Drain-Source On-state RDS(ON)a Resistance Diode Forward Voltage VSDa VGS=0V , IDS=250µA 30 V VDS=24V , VGS=0V 1 VDS=24V, VGS=0V, Tj= 55°C VDS=VGS , IDS=250µA 5 VGS=±20V , VDS=0V VGS=10V , IDS=4A VGS=4.5V , IDS=3.4A 1 20 µA 3 V ±100 30 nA ISD=1.25A , VGS=0V 35 0.73 45 1.2 VDS=15V , IDS= 10A 15 20 VGS=5V , 5.8 mΩ V b Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(ON) Turn-on Delay Time Tr Turn-on Rise Time VDD=15V , IDS=2A , td(OFF) Turn-off Delay Time VGEN=10V , RG=6Ω Tf Turn-off Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Notes a b nC 3.8 VGS=0V 11 18 17 26 37 54 20 30 ns 1150 VDS=15V Reverse Transfer Capacitance Frequency=1.0MHz 230 pF 100 : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 2 www.anpec.com.tw APM6928 Typical Characteristics Output Characteristics Transfer Characteristics 20 20 VGS=4,5,6,7,8,9,10V IDS-Drain Current (A) IDS-Drain Current (A) 16 12 8 4 0 15 10 TJ=25°C 5 0 0 2 4 6 TJ=55°C TJ=125°C V GS=3V 8 10 0 VDS-Drain-to-Source Voltage (V) 1 2 3 4 5 VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 0.05 1.2 RDS(ON)-On-Resistance (Ω) IDS=250µA VGS(th)-Variance (V) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 VGS=4.5V 0.03 VGS=10V 0.02 0.01 0.00 0 100 125 150 Tj-Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 0.04 5 10 15 20 IDS-Drain Current (A) 3 www.anpec.com.tw APM6928 Typical Characteristics On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature 0.12 1.8 RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) ID=4A 0.10 0.08 0.06 0.04 0.02 0.00 2 4 6 8 1.6 V GS=10V ID=4A 1.4 1.2 1.0 0.8 0.6 0.4 -50 10 VGS - Gate-to-Source Voltage (V) -25 0 50 75 100 125 150 TJ - Junction Temperature (°C) Capacitance Gate Charge 1500 10 V DS =15V IDS=10A 1200 8 Capacitance (pF) VGS-Gate-Source Voltage (V) 25 6 4 900 600 300 2 0 Ciss 0 5 10 15 20 25 0 30 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 Coss Crss 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM6928 Typical Characteristics Cont. Source-Drain Diode Forward Voltage Single Pulse Power 20 40 30 1 TJ=150°C Power (W) ISD-Source Current (A) 10 TJ=25°C 20 10 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.01 1.6 0.1 VSD-Source to Drain Voltage (V) 1 10 30 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Transient Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=125°C/W 3. TJM-TA=PDMZthJA 4. Surface Mounted SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 5 www.anpec.com.tw APM6928 Packaging Information PDIP-8 pin ( Reference JEDEC Registration MS-001) D E1 E 1 1 A2 A E3 A1 L e2 e1 e3 Dim Millimeters Min. A A1 A2 D e1 e2 e3 E E1 E3 L φ1 Inches Max. 5.33 0.38 2.92 9.02 Min. 3.68 10.16 0.015 0.115 0.355 0.56 1.78 0.014 0.045 7.11 10.92 3.81 0.240 2.54BSC 0.36 1.14 2.92 0.022 0.070 0.300 BSC 0.280 0.430 0.150 0.115 15° Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 0.145 0.400 0.100BSC 7.62 BSC 6.10 Max. 0.210 15° 6 www.anpec.com.tw APM6928 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM6928 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape t D P Po E P1 Bo F W Ko Ao D1 T2 J C A B T1 Application TSSOP-8 A B C J T1 T2 W P E 330 ± 1 62 +1.5 12.75+ 0.15 2 + 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 F D D1 Po P1 Ao Bo Ko t 5.5 ± 0. 1 1.5 + 0.1 1.5 + 0.1 4.0 ± 0.1 2.0 ± 0.1 7.0 ± 0.1 3.6 ± 0.3 1.6 ± 0.1 0.3±0.013 (mm) Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 8 www.anpec.com.tw APM6928 Cover Tape Dimensions Application TSSOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 9 www.anpec.com.tw