APT30GT60AR 600V 40A Thunderbolt IGBT TO-3 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • High Freq. Switching to 150KHz • Low Tail Current • Ultra Low Leakage Current • Avalanche Rated • RBSOA and SCSOA Rated (TO-204AE) C G • Hermetic Package E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter UNIT APT30GT60AR Y R A N I M I L E R P V CES Collector-Emitter Voltage 600 VCGR Collector-Gate Voltage (RGE = 20KW) 600 V EC Emitter-Collector Voltage 15 VGE Gate-Emitter Voltage I C1 Continuous Collector Current @ TC = 25°C 40 I C2 Continuous Collector Current @ TC = 90°C 30 Volts ±20 1 80 Amps I CM Pulsed Collector Current I LM RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C 60 EAS Single Pulse Avalanche Energy 2 65 mJ PD Total Power Dissipation 160 Watts TJ,TSTG TL @ TC = 25°C -55 to 150 Operating and Storage Junction Temperature Range 300 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C STATIC ELECTRICAL CHARACTERISTICS MIN Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA, Tj = -55°C) 600 RBVCES Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) -15 VGE(TH) Gate Threshold Voltage BVCES VCE(ON) I CES I GES (VCE = VGE, I C = 700µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C) TYP MAX UNIT 3 4 5 Volts 1.6 2.0 2.5 Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150°C) 2.8 Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 40 Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150°C) 1000 Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V) ±100 µA nA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 050-5971 Rev - 5-2000 Characteristic / Test Conditions Symbol DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller") Charge td(on) tr td(off) tf td(on) tr td(off) tf APT30GT60AR 3 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time MIN Capacitance VGE = 0V TYP 155 VCE = 25V f = 1 MHz 90 Gate Charge VGE = 15V 140 I C = I C2 12 Resistive Switching (25°C) 14 VGE = 15V 55 VCC = 0.8VCES I C = I C2 Y R A N I M I L E R P 18 Turn-off Delay Time 30 Inductive Switching (150°C) VCLAMP(Peak) = 0.66VCES VGE = 15V Fall Time 25 I C = I C2 Eoff Turn-off Switching Energy 1.2 Ets Total Switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time mJ 1.7 18 Inductive Switching (25°C) VCLAMP(Peak) = 0.66VCES 30 VGE = 15V I C = I C2 R G = 10W 20 Ets Total Switching Losses TJ = +25°C 1.3 gfe Forward Transconductance VCE = 20V, I C = I C2 ns 260 Fall Time tf ns 300 0.5 td(off) ns 140 RG = 10W R G = 10W tr nC 190 TJ = +150°C td(on) pF 60 VCC = 0.5VCES Turn-on Delay Time Rise Time UNIT 1600 Turn-on Switching Energy Eon MAX mJ 6 S THERMAL CHARACTERISTICS 050-5971 Rev - 5-2000 Symbol Characteristic RQJC Junction to Case RQJA Junction to Ambient MIN TYP MAX UNIT 0.78 °C/W 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 IC = IC2, RGE = 25W, L = 144µH, Tj = 25°C 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 40