APTC60AM24SCTG Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • VBUS Q1 - G1 OUT Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated S1 • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF NTC1 • • OUT • • Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Q2 G2 0/VBU S S2 S1 S2 NTC2 G1 G2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 95 70 260 ±20 24 462 15 3 1900 Unit V A August, 2009 0/VBUS OUT V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTC60AM24SCTG – Rev 0 VBUS APTC60AM24SCTG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 47.5A VGS = VDS, ID = 5mA VGS = ±20 V, VDS = 0V 2.1 3 Min Typ 14.4 17 Max 350 600 24 3.9 200 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 25V f = 1MHz nF 300 VGS = 10V VBus = 300V ID = 95A nC 68 102 21 Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 95A RG = 2.5Ω 30 ns 100 45 Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5Ω 810 µJ 1040 1320 µJ 1270 Series diode ratings and characteristics Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VR=200V IF = 90A IF = 180A IF = 90A IF = 90A VR = 133V di/dt = 600A/µs www.microsemi.com Min 200 Tj = 25°C Tj = 125°C Tc = 85°C Typ Max 500 750 Tj = 125°C 90 1.1 1.4 0.9 Tj = 25°C 24 Tj = 125°C 48 Tj = 25°C 99 Tj = 125°C 450 Unit V µA A 1.15 V ns August, 2009 IRM Test Conditions nC 2–7 APTC60AM24SCTG – Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTC60AM24SCTG SiC parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current Test Conditions Min 600 Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C VR=600V Typ Max 200 400 40 1.6 2.0 800 4000 IF DC Forward Current VF Diode Forward Voltage IF = 40A QC Total Capacitive Charge IF = 40A, VR = 300V di/dt =1200A/µs 56 C Total Capacitance f = 1MHz, VR = 200V 260 f = 1MHz, VR = 400V 200 Unit V µA A 1.8 2.4 V nC pF Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance SiC Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ Transistor Series diode To Heatsink M5 4000 -40 -40 -40 2.5 Max 0.27 0.45 0.8 Unit °C/W V 150 125 100 4.7 160 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ August, 2009 RT = R25 Typ 50 5 3952 4 www.microsemi.com 3–7 APTC60AM24SCTG – Rev 0 Symbol R25 ∆R25/R25 B25/85 ∆B/B APTC60AM24SCTG SP4 Package outline (dimensions in mm) ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 280 720 VGS=15&10V 6.5V 560 ID, Drain Current (A) 6V 480 400 5.5V 320 240 5V 160 4.5V 80 4V 240 200 160 120 80 0 TJ=25°C 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 1.25 1.2 VGS=10V 1.15 1.1 VGS=20V 1.05 1 0.95 ID, DC Drain Current (A) Normalized to VGS=10V @ 95A 7 DC Drain Current vs Case Temperature 100 RDS(on) vs Drain Current 1.3 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 0.9 August, 2009 0 RDS(on) Drain to Source ON Resistance TJ=125°C 40 80 60 40 20 0 0 40 80 120 160 200 240 280 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 4–7 APTC60AM24SCTG – Rev 0 ID, Drain Current (A) 640 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (°C) 1000 1.0 ID, Drain Current (A) 0.9 0.8 0.7 limited by RDSon 100 100 µs 0.6 1 ms Single pulse TJ=150°C TC=25°C 10 10 ms 1 25 50 75 100 125 150 1 Coss Ciss 10000 1000 Crss 10 0 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 1000000 100 100 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) 100000 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 12 ID=95A TJ=25°C 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) August, 2009 VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.1 C, Capacitance (pF) VGS=10V ID= 95A 2.5 5–7 APTC60AM24SCTG – Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60AM24SCTG APTC60AM24SCTG Delay Times vs Current 140 Rise and Fall times vs Current 70 VDS=400V RG=2.5Ω TJ=125°C L=100µH 60 100 td(off) tr and tf (ns) VDS=400V RG=2.5Ω TJ=125°C L=100µH 80 60 40 td(on) 20 50 40 30 tr 20 10 0 0 0 20 40 60 80 100 120 140 160 0 20 40 ID, Drain Current (A) Switching Energy vs Gate Resistance Eoff Switching Energy (mJ) Eon 1.5 1 0.5 0 VDS=400V ID=95A TJ=125°C L=100µH 4 3 Eoff Eon 2 1 0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) 0 Operating Frequency vs Drain Current VDS=400V D=50% RG=2.5Ω TJ=125°C TC=75°C ZCS 250 ZVS 200 150 100 IDR, Reverse Drain Current (A) 300 hard switching 50 0 10 20 30 40 50 60 70 80 5 10 15 20 25 Gate Resistance (Ohms) 90 ID, Drain Current (A) Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) www.microsemi.com August, 2009 Switching Energy (mJ) 2 80 100 120 140 160 5 VDS=400V RG=2.5Ω TJ=125°C L=100µH 2.5 60 ID, Drain Current (A) Switching Energy vs Current 3 Frequency (kHz) tf 6–7 APTC60AM24SCTG – Rev 0 td(on) and td(off) (ns) 120 APTC60AM24SCTG Typical SiC parallel Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.9 0.8 0.9 0.7 0.7 0.6 0.5 0.5 0.4 0.3 0.3 0.2 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 800 TJ=25°C 60 TJ=75°C IR Reverse Current (µA) IF Forward Current (A) Reverse Characteristics Forward Characteristics 80 TJ=175°C 40 TJ=125°C 20 0 0 0.5 1 1.5 2 2.5 3 3.5 700 TJ=175°C 600 500 TJ=125°C TJ=75°C 400 300 200 TJ=25°C 100 0 200 300 400 500 600 700 800 VR Reverse Voltage (V) VF Forward Voltage (V) Capacitance vs.Reverse Voltage 1600 C, Capacitance (pF) 1400 1200 1000 800 600 400 200 10 100 VR Reverse Voltage 1000 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 APTC60AM24SCTG – Rev 0 1 August, 2009 0