S D ARF1501 S D ARF1501 BeO RF POWER MOSFET 1525-xx G S S G S N - CHANNEL ENHANCEMENT MODE 250V 750W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz. • Specified 250 Volt, 27.12 MHz Characteristics: • Output Power = 750 Watts. • Gain = 17dB (Class C) • Efficiency > 75% • High Performance Power RF Package. • Very High Breakdown for Improved Ruggedness. • Low Thermal Resistance. • Nitride Passivated Die for Improved Reliability. MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C ARF1501 UNIT 1000 Volts 30 Amps VGS Gate-Source Voltage ±30 Volts PD Total Device Dissipation @ TC = 25°C 1500 Watts TJ,TSTG TL -55 to 200 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 1000 On State Drain Voltage 1 (ID(ON) = 15A, VGS = 10V) TYP MAX 7.5 9 40 Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) 1000 IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±400 g fs Forward Transconductance (VDS = 25V, ID = 15A) V isolation RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 5.5 7 UNIT Volts µA nA mhos 2500 Volts 3 5 Volts MAX UNIT Characteristic (per package unless otherwise noted) RθJC Junction to Case RθCS Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP 0.12 0.09 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com °C/W 050-5982 Rev C Symbol 9-2005 THERMAL CHARACTERISTICS DYNAMIC CHARACTERISTICS Symbol ARF1501 Test Conditions Characteristic MIN TYP MAX 5400 6500 VDS = 200V 300 400 f = 1 MHz 125 160 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time VGS = 15V 8 Rise Time VDD = 500V 5 ID = ID[Cont.] @ 25°C 25 RG = 1.6 Ω 13 tr td(off) tf VGS = 0V Turn-off Delay Time Fall Time UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 27.12 MHz 15 17 dB 70 75 % VGS = 0V Drain Efficiency Electrical Ruggedness VSWR 10:1 VDD = 250V Pout = 750W MAX UNIT No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%. APT Reserves the right to change, without notice, the specifications and information contained herein. Per transistor section unless otherwise specified. 20,000 10,000 Ciss CAPACITANCE (pf) 5000 1000 Coss 500 Crss 100 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Capacitance vs. Drain-to-Source Voltage 120 VDS> ID(ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 50 TJ = -55°C 40 30 20 TJ = +25°C 10 DATA FOR BOTH SIDES IN PARALLEL ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 050-5982 Rev C 9-2005 60 50 100us 10 5 0 2 4 6 8 10 12 14 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics 1ms TC =+25°C TJ =+200°C SINGLE PULSE TJ = +125°C 0 OPERATION HERE LIMITED BY RDS (ON) 1 1 5 10 50 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Maximum Safe Operating Area 10ms 100ms 45 1.10 40 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.15 1.05 1.00 0.95 0.90 0.85 ARF1501 10V 9V 35 30 8V 25 7V 20 15 6V 10 0.80 5 0.75 -50 -25 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 4, Typical Threshold Voltage vs Temperature 5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5, Typical Output Characteristics 0.12 D = 0.9 0.10 0.7 0.08 0.5 0.06 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 0.14 0.3 0.04 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 0.02 0.1 0 10-5 t1 0.05 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 6, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration 10 Table 1 - Typical Class AB Large Signal Impedance -- ARF1501 F (MHz) 2.0 13.5 27 40 Zin (Ω) 10.6 -j 12.2 0.5 -j 2.7 0.22 -j 0.8 0.2 +j .12 ZOL (Ω) 31 -j 4.7 15.6 -j 16 6.2 -j 12.6 3.1 -j 9.4 Zin - Gate shunted with 25Ω IDQ = 100mA ZOL - Conjugate of optimum load for 750 Watts output at Vdd = 250V .250 S Thermal Considerations and Package Mounting: The rated 1500W power dissipation is only available when the package mounting surface is at 25°C and the junction temperature is 200°C. The thermal resistance between junctions and case mounting surface is 0.12°C/W. When installed, an additional thermal impedance of 0.1°C/W between the package base and the mounting surface is typical. Insure that the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. S .500 ARF15-BeO 1525-xx 1.065 .045 S G S .207 .375 .207 .500 .105 typ. HAZARDOUS MATERIAL WARNING D G S The ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area These devices must never be thrown away with general industrial or domestic waste. 9-2005 .005 050-5982 Rev C The package is designed to be clamped to a heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the device and the heat sink. A simple clamp, and two 6-32 (M3.5) screws can provide the minimum 125lb required mounting force. T = 12 in-lb. D Heat Sink ARF1501 -- 27.12 MHz Test Circuit 250V L4 C7 L3 C9 C8 C10 Output C6 L2 L1 C1 TL1 C2 C5 R1 C3 RF Input C12 C4 C11 R2 R3 Vbias 135-05 ARF1500 ARF1501 BeO J1 C1, C7,C8, C11 .1uF 250V ceramic chip C2, C12 ARCO 465 75-380pF mica trimmer C3 4700pF ATC700B C4, C9-C11 8200pF 500V NPO ceramic C5 - C6 150pF ATC 700B L1 90 nH 4t #18 0.25"d .25"l L2 175 nH - 3t #10 .75" dia .75" l L3 2uH - 22t #24 enam. .312" dia. L4 500nH 2t on 850u .5" bead R1-R3 1k Ω 1/4W TL1 .112" x 1.2" (50 Ω) Stripline 27 MHz Amp ARF1501 J2 RF 5-02 050-5982 Rev C 9-2005 Parts placement 27 MHz Amp ARF1501 1:1 pcb artwork RF 5-02