BLX92A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLX92A is Designed for transmitting applications in class-A, B or C with a supply voltage up to 28 V PACKAGE STYLE .280 4L STUD A 45° C FEATURES: • High Gain - 11.0 dB Min. • Omnigold™ Metallization System E E B B C D J E I F MAXIMUM RATINGS G H K 0.7 A IC #8-32 UNC DIM MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 MAXIMUM VCB 65 V B .220 / 5.59 .230 /5.84 PDISS 6.0 W @ TC = 25 °C C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 TJ -65 to +200 °C E .117 / 2.97 TSTG -65 to +150 °C .130 / 3.30 G .245 / 6.22 H 9.8 °C/W CHARACTERISTICS SYMBOL .255 / 6.48 .640 / 16.26 I θJC .137 / 3.48 .572 / 14.53 F J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 NONE TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 10 mA 65 V BVCES IC = 10 mA 65 V BVCEO IC = 25 mA 33 V BVEBO IE = 1.0 mA 4.0 V hFE VCE = 5.0 V IC = 100 mA 10 --- fT VCE = 5.0 V IC = 100 mA Cc VCB = 10 V Ce VEB = 0 V PG ηC VCE = 28 V POUT = 2.5 W 1.2 GHz f = 1.0 MHz 6.5 pF f = 1.0 MHz 25 pF f = 470 MHz 11 60 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.