SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – JANUARY 1996 BST40 ✪ COMPLEMENTARY TYPE – BST15 C PARTMAKING DETAIL — AT2 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 250 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 1 A Continuous Collector Current IC 500 mA Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 300 MAX. V IC=100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 250 V IC=1mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µA, IC=0 Emitter Cut-Off Current IEBO 10 µA VEB=5V, IE=0 Collector Cut-Off Current ICBO 20 nA VCB=300V Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=50mA, IB=4mA Base-Emitter Saturation Voltage VBE(sat) 1.3 V IC=50mA, IB=4mA Static Forward Current Transfer Ratio hFE 40 Transition Frequency fT 70 IC=20mA, VCE=10V* MHz IC=10mA, VCE=10V, f=5MHz Output Capacitance Cobo 2 pF VCB=10V, f=1MHz Input Capacitance Cibo 30 pF VEB=5V, f=1MHz * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FMMTA42 datasheet. 3 - 78