PD - 97711
AUTOMOTIVE GRADE
AUIRF1018ES
Features
●
●
●
●
●
●
●
HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
RDS(on) typ.
max.
ID
D
G
S
60V
7.1m:
8.4m:
79A
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
D
G
D
S
D2Pak
IRF1018ESPbF
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
c
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
Avalanche Current
Repetitive Avalanche Energy
c
e
d
f
A
W
W/°C
V
mJ
A
mJ
11
21
-55 to + 175
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
dv/dt
TJ
TSTG
Units
79
56
315
110
0.76
± 20
88
47
V/ns
°C
300
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
j
Junction-to-Ambient (PCB Mount) , D2Pak
i
Typ.
Max.
Units
–––
–––
1.32
40
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/19/11
AUIRF1018ES
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
RG(int)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Drain-to-Source Leakage Current
60
–––
–––
2.0
110
–––
0.073
7.1
–––
–––
–––
–––
8.4
4.0
–––
–––
0.73
–––
–––
–––
–––
–––
20
250
100
-100
–––
–––
–––
–––
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 5mA
mΩ VGS = 10V, ID = 47A
V VDS = VGS, ID = 100μA
S VDS = 50V, ID = 47A
f
Ω
μA
nA
VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
h
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
g
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
46
10
12
34
13
35
55
46
2290
270
130
390
630
69
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ns
f
pF
Min. Typ. Max. Units
IS
–––
–––
79
–––
–––
315
VSD
trr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
c
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.08mH
RG = 25Ω, IAS = 47A, VGS =10V. Part not recommended for
use above this value.
ISD ≤ 47A, di/dt ≤ 1668A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
Conditions
ID = 47A
VDS = 30V
VGS = 10V
ID = 47A, VDS =0V, VGS = 10V
VDD = 39V
ID = 47A
RG = 10Ω
VGS = 10V
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
VGS = 0V, VDS = 0V to 60V
f
Diode Characteristics
Symbol
Parameter
Continuous Source Current
c
A
h
g
Conditions
MOSFET symbol
showing the
integral reverse
D
G
S
p-n junction diode.
––– –––
1.3
V TJ = 25°C, IS = 47A, VGS = 0V
VR = 51V,
–––
26
39
ns TJ = 25°C
T
=
125°C
IF = 47A
–––
31
47
J
di/dt = 100A/μs
–––
24
36
nC TJ = 25°C
TJ = 125°C
–––
35
53
–––
1.8
–––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
f
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
This is only applied to TO-220.
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AUIRF1018ES
1000
1000
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
BOTTOM
4.5V
10
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
BOTTOM
4.5V
10
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 25°C
Tj = 175°C
1
1
0.1
1
10
100
0.1
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current(A)
10
VDS, Drain-to-Source Voltage (V)
1000
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 25V
≤60μs PULSE WIDTH
0.1
ID = 47A
VGS = 10V
2.0
1.5
1.0
0.5
2
3
4
5
6
7
8
9
-60 -40 -20 0 20 40 60 80 100120140160180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
4000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
VGS, Gate-to-Source Voltage (V)
16
Coss = Cds + Cgd
3000
C, Capacitance (pF)
1
VDS, Drain-to-Source Voltage (V)
Ciss
2000
1000
Coss
Crss
0
1
VDS= 48V
VDS= 30V
12
VDS= 12V
8
4
0
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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ID= 47A
0
10
20
30
40
50
60
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
AUIRF1018ES
10000
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
TJ = 175°C
10
TJ = 25°C
1
1000
VGS = 0V
0.5
1.0
1.5
100
1msec
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
2.0
ID , Drain Current (A)
60
40
20
0
100
125
150
175
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
80
75
1
Id = 5mA
75
70
65
60
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
EAS, Single Pulse Avalanche Energy (mJ)
0.8
0.6
Energy (μJ)
100
80
TC , CaseTemperature (°C)
0.4
0.2
0.0
400
I D
5.3A
11A
BOTTOM 47A
350
TOP
300
250
200
150
100
50
0
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
4
10
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
50
DC
VDS, Drain-toSource Voltage (V)
VSD, Source-to-Drain Voltage (V)
25
100μsec
0.1
0.1
0.0
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Fig 11. Typical COSS Stored Energy
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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AUIRF1018ES
Thermal Response ( ZthJC )
10
1
D = 0.50
0.20
0.10
0.1
R1
R1
0.05
τJ
0.02
0.01
τJ
τ1
R2
R2
R3
R3
R4
R4
τC
τ2
τ1
τ3
τ2
τ4
τ3
Ci= τi/Ri
Ci i/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ4
τ
Ri (°C/W)
0.026741
0.28078
0.606685
0.406128
τι (sec)
0.000007
0.000091
0.000843
0.005884
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
Duty Cycle = Single Pulse
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
100
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 47A
80
60
40
20
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
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5
AUIRF1018ES
14
ID = 1.0A
ID = 1.0mA
ID = 250μA
ID = 100μA
4.0
3.5
3.0
12
IF = 32A
VR = 51V
10
TJ = 25°C
TJ = 125°C
8
IRR (A)
VGS(th) Gate threshold Voltage (V)
4.5
2.5
6
2.0
4
1.5
2
1.0
-75 -50 -25
0
25
50
75
0
100 125 150 175
0
200
TJ , Temperature ( °C )
600
800
1000
diF /dt (A/μs)
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
14
320
12
IF = 47A
VR = 51V
10
TJ = 25°C
TJ = 125°C
IF = 32A
VR = 51V
280
TJ = 25°C
TJ = 125°C
240
200
8
QRR (A)
IRR (A)
400
6
160
120
4
80
2
40
0
0
0
200
400
600
800
1000
0
200
diF /dt (A/μs)
400
600
800
1000
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
320
IF = 47A
VR = 51V
280
TJ = 25°C
TJ = 125°C
240
QRR (A)
200
160
120
80
40
0
0
200
400
600
800
1000
diF /dt (A/μs)
6
Fig. 20 - Typical Stored Charge vs. dif/dt
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AUIRF1018ES
Driver Gate Drive
D.U.T
+
-
-
*
RG
***
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
V DD
**
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 21. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
V(BR)DSS
15V
D.U.T
RG
20V
VGS
DRIVER
L
VDS
tp
+
V
- DD
IAS
tp
A
0.01Ω
I AS
Fig 22a. Unclamped Inductive Test Circuit
RD
V DS
Fig 22b. Unclamped Inductive Waveforms
VDS
90%
VGS
D.U.T.
RG
+
-V DD
10%
VGS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
Fig 23a. Switching Time Test Circuit
td(off)
tr
tf
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
L
DUT
0
20K
1K
VCC
S
Vgs(th)
Qgodr
Fig 24a. Gate Charge Test Circuit
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Qgd
Qgs2 Qgs1
Fig 24b. Gate Charge Waveform
7
AUIRF1018ES
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUF1018ES
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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AUIRF1018ES
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
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60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
9
AUIRF1018ES
Ordering Information
Base part
AUIRF1018ES
10
Package Type
D2Pak
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
800
800
AUIRF1018ES
AUIRF1018ESTRL
AUIRF1018ESTRR
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AUIRF1018ES
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections,
modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product
discontinuance and process change notification. All products are sold subject to IRs terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IRs standard warranty. Testing
and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government
requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR
components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards.
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and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for
any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications
intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or
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any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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11