IRF AUIRF1405

PD - 97691A
AUTOMOTIVE GRADE
AUIRF1405
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
l
l
Advanced Planar Technology
Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed
up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified*
V(BR)DSS
D
G
S
55V
RDS(on) typ.
max
ID (Silicon Limited)
4.6m
5.3m
169A
ID (Package Limited)
75A
h
D
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
G
D
S
TO-220AB
AUIRF1405
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
Max.
Units
h
118h
Continuous Drain Current, VGS @ 10V (Silicon Limited)
169
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
c
75
680
PD @TC = 25°C
330
2.2
± 20
W
W/°C
560
mJ
VGS
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy (Thermally Limited)
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Peak Diode recovery dv/dt
Operating Junction and
dv/dt
TJ
TSTG
c
e
i
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
d
See Fig.12a, 12b, 15, 16
j
A
mJ
V/ns
5.0
-55 to + 175
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
y
Thermal Resistance
Parameter
V
y
Typ.
Max.
RJC
Junction-to-Case
–––
0.45
RCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
RJA
Junction-to-Ambient
–––
62
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
10/10/11
AUIRF1405
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
55
–––
–––
2.0
69
–––
–––
–––
–––
–––
0.057
4.6
–––
–––
–––
–––
–––
–––
–––
–––
5.3
4.0
–––
20
250
200
-200
V
V/°C
m
V
S
μA
nA
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 101A
VDS = VGS, ID = 250μA
VDS = 25V, ID = 101A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Diode Characteristics
g
Parameter
IS
ISM
VSD
trr
Qrr
ton
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
c
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Starting TJ = 25°C, L = 0.11mH
RG = 25, IAS = 101A. (See Figure 12).
ƒ ISD  101A, di/dt  210A/μs, VDD V(BR)DSS,
TJ  175°C
„ Pulse width  400μs; duty cycle  2%.
2
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
170
44
62
13
190
130
110
260
66
93
–––
–––
–––
–––
–––
4.5
–––
–––
7.5
–––
–––
–––
–––
–––
–––
–––
5480
1210
280
5210
900
1500
–––
–––
–––
–––
–––
–––
nC
ns
nH
pF
Min. Typ. Max. Units
Conditions
ID = 101A
VDS = 44V
VGS = 10V
VDD = 38V
ID = 101A
RG = 1.1 
VGS = 10V
f
f
D
Between lead,
6mm (0.25in.)
G
from package
S
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig.5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Conditions
h
D
MOSFET symbol
–––
––– 169
showing the
A
G
integral reverse
–––
–––
680
S
p-n junction diode.
TJ = 25°C, IS = 101A, VGS = 0V
–––
–––
1.3
V
–––
88
130
ns TJ = 25°C, IF = 101A
–––
250
380
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
f
… Coss eff. is a fixed capacitance that gives the same charging
time as Coss while VDS is rising from 0 to 80% VDSS .
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
‡ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
ˆ R is measured at TJ of approximately 90°C.
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AUIRF1405
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
TO-220
N/A
Class M4 (+/-600V)
†††
AEC-Q101-002
ESD
Human Body Model
Class H2 (+/-4000V) †††
AEC-Q101-001
Charged Device Model
Class C5 (+/- >2000V) †††
AEC-Q101-005
RoHS Compliant
†
Yes
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage.
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3
AUIRF1405
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
10
4.5V
20μs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
4.5V
10
0.1
100
Fig 1. Typical Output Characteristics
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 175 ° C
100
10
V DS = 25V
20μs PULSE WIDTH
6
8
10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
10
100
Fig 2. Typical Output Characteristics
1000
4
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
1
20μs PULSE WIDTH
TJ = 175 ° C
12
ID = 169A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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AUIRF1405
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
Coss = Cds + Cgd
10000
Ciss
Coss
1000
Crss
20
VGS , Gate-to-Source Voltage (V)
100000
10
12
8
4
0
100
FOR TEST CIRCUIT
SEE FIGURE 13
0
60
120
180
240
300
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
10000
TJ = 175 ° C
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
VDS = 44V
VDS = 27V
16
100
1
ID = 101A
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100
100
TJ = 25 ° C
10
1
0.0
V GS = 0 V
0.5
1.0
1.5
2.0
2.5
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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3.0
100μsec
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF1405
VDS
200
LIMITED BY PACKAGE
VGS
RD
D.U.T.
RG
160
+
ID , Drain Current (A)
-VDD
120
10V
Pulse Width µs
Duty Factor 
80
Fig 10a. Switching Time Test Circuit
40
0
VDS
25
50
75
100
125
150
TC , Case Temperature ( ° C)
90%
175
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
0.01
t1
t2
0.001
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF1405
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
0.01
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
1200
ID
41A
71A
BOTTOM 101A
TOP
1000
A
800
600
400
200
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
I AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
4.0
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
ID = 250μA
3.0
2.5
2.0
50K
12V
VGS(th) , Variace ( V )
3.5
.2F
.3F
D.U.T.
+
V
- DS
1.5
-75 -50 -25
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRF1405
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming  Tj = 25°C due to
avalanche losses
0.01
100
0.05
0.10
10
1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
600
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 101A
500
400
300
200
100
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
175
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT jmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
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AUIRF1405
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
ƒ
Circuit Layout Considerations
 Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
+
‚
-
-

„
+
RG
+
-
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VGS
*
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[
] ***
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[ VDD]
Forward Drop
Inductor Curent
Ripple  5%
[ ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 17. For N-channel HEXFET® power MOSFETs
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9
AUIRF1405
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRF1405
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF1405
Ordering Information
Base part
number
Package Type
Standard Pack
AUIRF1405
TO-220
Form
Tube
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Complete Part Number
Quantity
50
AUIRF1405
11
AUIRF1405
IMPORTANT NOTICE
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subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
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number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.
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