AWT6172 GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control PRELIMINARY DATA SHEET - Rev 1.4 PRODUCT DESCRIPTION features This quad band power amplifier module supports dual, tri and quad band applications for both GMSK and 8-PSK modulation schemes. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. • InGaP HBT Technology • Low profile 1.1 mm • Small Package Outline 6 mm x 6 mm • EGPRS Capable (class 12) • Integrated Reference Voltage GMSK MODE • Integrated power control (CMOS) • +35 dBm GSM850/900 Output Power • +33 dBm DCS/PCS Output Power • 55 % GSM850/900 PAE • 52 % DCS/PCS PAE • Power control range > 50 dB EDGE MODE • +28.5 dBm GSM850/900 Output Power • +27.5 dBm DCS/PCS Output Power • -66 dBc Typical ACPR (400 kHz) • -78 dBc Typical ACPR (600 kHz) APPLICATIONS • The module includes an integrated power control scheme for use in the GMSK mode. This facilitates fast and easy production calibration and reduces the number of external components required to complete a power control function. The amplifier’s power control range is typically 55 dB, with the output power set by applying an analog voltage to VRAMP. In EDGE mode, the VRAMP pin is disabled and no specific voltage is required for proper operation. Output power is controlled by varying the input power. All of the RF ports for this device are internally matched to 50Ω. Dual/Tri/Quad Band Handsets, PDAs and Data Devices DCS/PCS_OUT DCS/PCS_IN GSM850/900_OUT GSM850/900_IN Figure 1: Block Diagram 02/2009 AWT6172 DCS/PCS_IN DCS/PCS_OUT BS GSM850/900_IN GSM850/900_OUT Figure 2: Pinout (X - ray Top View) 2 PRELIMINARY DATA SHEET - Rev 1.4 02/2009 AWT6172 Table 1: Pin Description PIN NaMe 1 DCS/PCS_IN RF input to the DCS/PCS PA. There is a 175 shunt resistor before the DC blocking capacitor to set the input impedance 2 BS Band select logic pin. Logic low selects the GSM PA and a logic high selects the DCS/PCS PA 3 TX_EN 4 VBATT Battery supply connection 5 VMODE Logic pin for selection of GMSK or 8PSK (EDGE) mode. A logic low selects GMSK mode and a logic high selects the 8PSK mode 6 VRAMP Analog output power control pin 7 GSM850/900_IN 8 VBIAS VBIAS logic input. A logic low sets a low bias point for current savings at low power levels, a logic high sets a high bias point for meeting linearity perfomance up to the maximum specified linear ouptut power 9 GND Ground 10 GND Ground 11 DesCrIPtION TX enable logic pin, a logic high will enable the PA RF input to GSM850/900 PA. GSM850/900_OUT RF output for GSM850/900 bands (DC blocked) 12 GND Ground 13 GND Ground 14 GND Ground 15 GND Ground 16 GND Ground 17 DCS/PCS_OUT 18 GND Ground 19 GND Ground 20 GND Ground RF output for DCS/PCS bands (DC blocked) PRELIMINARY DATA SHEET - Rev 1.4 02/2009 3 AWT6172 ELECTRICAL CHARACTERISTICS Table 2: Absolute Maximum Ratings ParaMeter MIN MaX uNIts Supply Voltage (VBATT) -0.5 +6 V RF Input Power (RFIN) - 12 dBm Control Voltage (VRAMP) -0.3 3.0 V Storage Temperature (TSTG) -55 150 °C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: ESD Ratings ParaMeter MetHOD ratING uNIt ESD Threshold voltage (RF ports) HBM 2.5 kV ESD Threshold voltage (control inputs) HBM 2.5 kV Although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to electrostatic discharge (ESD) during handling and mounting. Human body model HBM employed is resistance = 1500Ω, capacitance = 100pF. Table 4: Digital Inputs ParaMeter sYMBOL MIN tYP MaX uNIts Logic High Voltage VIH 1.2 - 3.0 V Logic Low Voltage VIL -0.5 - 0.5 V Logic High Current |IIH| - - 30 A Logic Low Current |IIL| - - 30 A 4 PRELIMINARY DATA SHEET - Rev 1.4 02/2009 AWT6172 Table 5: Logic Control Table OPeratIONaL MODe vMODe Bs tX_eN vBIas GSM850/900 GMSK LOW LOW HIGH X VRAMP Controls Output Power, X = Don't Care DCS/PCS GMSK LOW HIGH HIGH X VRAMP Controls Output Power, X = Don't Care GSM850/900 EDGE HIGH LOW HIGH HIGH VRAMP Control Disabled, Fixed Gain PA DCS/PCS EDGE HIGH HIGH HIGH HIGH VRAMP Control Disabled, Fixed Gain PA GSM850/900 EDGE (Low Power Levels) (1) HIGH LOW HIGH LOW VRAMP Control Disabled, Fixed Gain PA DCS/PCS EDGE (Low Power Levels) (2) HIGH HIGH HIGH LOW VRAMP Control Disabled, Fixed Gain PA X X LOW X PA DISABLED NOtes X = Don't Care Notes: (1) POUT +20 dBm. (2) POUT +19 dBm. PRELIMINARY DATA SHEET - Rev 1.4 02/2009 5 AWT6172 Table 6: Operating Ranges ParaMeter sYMBOL MIN tYP MaX uNIts TC -20 - 85 °C Supply voltage VBATT 3.2 3.6 4.5 V Control voltage VRAMP 0.25 - 2.2 V VBATT = 4.5 V, VRAMP = 0 V, TX_EN = LOW No RF applied - - 5 A VRAMP Input Capacitance - - 3 - pF VRAMP Input Current - - - 10 A - 0.4 1 s - 0.5 1 s - 0.4 1 s - - 1 s - - 50 % Case temperature Power supply leakage current Rise Time (TRISE) Fall Time (TFALL) Mode Switch VBIAS Switch Duty Cycle 6 POUT = -10 dBm Y PMAX (within 0.2 dB) POUT = PMAX Y -10 dBm (within 0.2 dB) GMSK Y EDGE EDGE Y GMSK High Power Y Low Power Low Power Y High Power - PRELIMINARY DATA SHEET - Rev 1.4 02/2009 AWT6172 Table 7: Electrical Characteristics for GSM850 GMSK Mode Unless otherwise specified: VBATT = 3.6 V, PIN = +2.0 dBm, Pulse Width =1154µs, Duty Cycle 25%, ZIN = ZOUT = 50Ω, TC = 25 °C, VRAMP = 2.2 V, BS = LOW, TX_EN = HIGH, VMODE = LOW ParaMeter MIN tYP MaX uNIt 824 - 849 MHz 0 +2 +4 dBm Output Power, PMAX 34.5 35.1 - dBm Degraded Output Power 32.5 33.5 - dBm 47 54 - % Forward Isolation 1 - -45 -30 dBm TX_EN = LOW, PIN = +4 dBm Forward Isolation 2 - -28 -10 dBm TX_EN = HIGH, V RAMP = 0.25 V, PIN = +4 dBm Cross Isolation Fo @ DCS/PCS port 2Fo, 3Fo @ DCS/PCS port - -2 -22 +2 -16 dBm POUT 34.5 dBm Harmonics Second Harmonic (2Fo) Third Harmonic (3Fo) 4Fo to 15Fo - -21 -20 -20 -10 -10 -8 Operating Frequency ( Fo ) Input Power PAE @ PMAX dBm COMMeNts VBATT = 3.2 V, TC = +85 °C PIN = 0 dBm POUT 34.5 dBm Output Load VSWR = 6:1, All Phases POUT 34.5 dBm Stability (all spurious) Ruggedness - - -36 dBm FOUT < 1 GHz, RBW = 3 MHz - - -30 dBm FOUT > 1 GHz, RBW = 3 MHz No Degradation, No Damage RX Noise Power - -84 -81 dBm Input Return Loss - - 2.5:1 VSWR Load VSWR = 10:1, All Phase Angles; POUT 34.5 dBm FTX = 849 MHz, RBW = 100 kHz FRX = 869 to 894 MHz, POUT < 34.5 dBm PRELIMINARY DATA SHEET - Rev 1.4 02/2009 7 AWT6172 Table 8: Electrical Characteristics for GSM900 GMSK Mode Unless otherwise specified: VBATT = 3.6 V, PIN = +2.0 dBm, Pulse Width =1154µs, Duty Cycle 25%, ZIN = ZOUT = 50Ω, TC = 25 °C, VRAMP = 2.2 V, BS = LOW, TX_EN = HIGH, VMODE = LOW ParaMeter MIN tYP MaX uNIt 880 - 915 MHz 0 +2 +4 dBm Output Power, PMAX 34.5 35.1 - dBm Degraded Output Power 32.5 33.5 - dBm 49 55 - % Forward Isolation 1 - -45 -30 dBm TX_EN = LOW, PIN = +4 dBm Forward Isolation 2 - -27 -10 dBm TX_EN = HIGH, V RAMP = 0.25 V, PIN = +4 dBm Cross Isolation Fo @ DCS/PCS port 2Fo, 3Fo @ DCS/PCS port - -2 -21 +2 -16 dBm POUT 34.5 dBm Harmonics Second Harmonic (2Fo) Third Harmonic (3Fo) 4Fo to 15Fo - -21 -23 -20 -10 -10 -8 Operating Frequency ( Fo ) Input Power PAE @ PMAX dBm COMMeNts VBATT = 3.2 V, TC = +85 °C PIN = 0 dBm POUT 34.5 dBm Output Load VSWR = 6:1, All Phases POUT 34.5 dBm Stability (all spurious) Ruggedness RX Noise Power 10 MHz Offset - - -36 dBm FOUT < 1 GHz, RBW = 3 MHz - - -30 dBm FOUT > 1 GHz, RBW = 3 MHz No Degradation, No Damage - -80 -75 dBm 20 MHz Offset Input Return Loss 8 - -84 -81 - - 2.5:1 Load VSWR = 10:1, All Phase Angles; POUT 34.5 dBm FTX = 915 MHz, RBW = 100 kHz FRX = 925 to 935 MHz, POUT < 34.5 dBm FTX = 915 MHz, RBW = 100 kHz FRX = 935 to 960 MHz, POUT < 34.5 dBm VSWR PRELIMINARY DATA SHEET - Rev 1.4 02/2009 AWT6172 Table 9: Electrical Characteristics for GSM850 EDGE Mode Unless otherwise specified: VBATT = 3.6 V, Pulse Width =1154µs, Duty Cycle 25% ZIN = ZOUT = 50Ω, TC = 25 °C, BS = LOW, TX_EN = HIGH, VMODE = HIGH ParaMeter MIN tYP MaX uNIt 824 - 849 MHz Linear POUT (High Power Mode) Linear POUT (Low Power Mode) 28.5 20 - - dBm Linear Degraded Output Power LD_POUT (High Power Mode) (1) LD_POUT (Low Power Mode) (2) 26 17.5 - - dBm Linear Gain (High Power Mode) 29.0 31.5 34.0 dB VBIAS = High Linear Gain (Low Power Mode) 24.0 28.5 34.0 dB VBIAS = Low Gain Variation - -0.015 - dB/oC Power-Added Efficiency - 22 - % Icq (Low Power Mode) - 100 - mA Error Vector Magnitude (EVM) - 2 5 % Linearity ACPR1 ACPR2 ACPR3 - -38 -66 -79 -33 -58 -64 dBc Cross Isolation Fo @ DCS/PCS port 2Fo, 3Fo @ DCS/PCS port - -7 -50 0 -20 dBm POUT < 28.5 dBm Harmonics Second Harmonic (2Fo) Third Harmonic (3Fo) 4Fo to 15Fo - -40 -35 -20 -20 -15 -10 dBm POUT < 28.5 dBm Operating Frequency ( Fo ) COMMeNts VBIAS = High VBIAS = Low Meets ACPR and EVM limits specified under nominal conditions -20 oC TC +85 oC POUT = 28.5 dBm VBIAS = Low POUT < 28.5 dBm, BW = 30 kHz Fo 200 kHz Fo 400 kHz Fo 600 kHz Output Load VSWR = 6:1 All Phases, POUT < 28.5 dBm Stability (all spurious) Ruggedness - - -36 dBm FOUT < 1 GHz, RBW = 3 MHz - - -30 dBm FOUT > 1 GHz, RBW = 3 MHz No Degradation, No Damage RX Noise Power - -83 Input Return Loss - - -80 dBm Load VSWR = 10:1, All Phase Angles; POUT 28.5 dBm FTX = 849 MHz, RBW = 100 kHz FRX = 869 to 894MHz, POUT < 28.5 dBm 2.5:1 VSWR Notes: (1) VBIAS = High, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC). (2) VBIAS = Low, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC). PRELIMINARY DATA SHEET - Rev 1.4 02/2009 9 AWT6172 Table 10: Electrical Characteristics for GSM900 EDGE Mode Unless otherwise specified: VBATT = 3.6 V, Pulse Width =1154µs, Duty Cycle 25% ZIN = ZOUT = 50Ω, TC = 25 °C, BS = LOW, TX_EN = HIGH, VMODE = HIGH COMMeNts MIN tYP MaX uNIt 880 - 915 MHz Linear POUT (High Power Mode) Linear POUT (Low Power Mode) 28.5 20 - - dBm Linear Degraded Output Power LD_POUT (High Power Mode) (1) LD_POUT (Low Power Mode) (2) 26 17.5 - - dBm Linear Gain (High Power Mode) 29.0 32.0 34.0 dB VBIAS = High Linear Gain (Low Power Mode) 24 29.0 34 dB VBIAS = Low Gain Variation - -0.015 - dB/oC Power-Added Efficiency - 22 - % Icq (Low Power Mode) - 100 - mA Error Vector Magnitude (EVM) - 2 5 % Linearity ACPR1 ACPR2 ACPR3 - -36 -67 -79 -33 -58 -64 Cross Isolation Fo @ DCS/PCS port 2Fo, 3Fo @ DCS/PCS port - -7 -50 Harmonics Second Harmonic (2Fo) Third Harmonic (3Fo) 4Fo to 15Fo - -40 -35 -20 ParaMeter Operating Frequency ( Fo ) VBIAS = High VBIAS = Low Meets ACPR and EVM limits specified under nominal conditions -20 oC TC +85 oC POUT = 28.5 dBm VBIAS = Low dBc POUT < 28.5 dBm, BW = 30 kHz Fo 200 kHz Fo 400 kHz Fo 600 kHz 0 -20 dBm POUT < 28.5 dBm -20 -15 -10 dBm POUT < 28.5 dBm Output Load VSWR = 6:1 All Phases, POUT < 28.5 dBm Stability (all spurious) Ruggedness - - -36 dBm FOUT < 1 GHz, RBW = 3 MHz - - -30 dBm FOUT > 1 GHz, RBW = 3 MHz No Degradation, No Damage Load VSWR = 10:1, All Phase Angles; POUT 28.5 dBm Notes: (1) VBIAS = High, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC). (2) VBIAS = Low, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC). 10 PRELIMINARY DATA SHEET - Rev 1.4 02/2009 AWT6172 Table 10: Electrical Characteristics for GSM900 EDGE Mode (Continued) Unless otherwise specified: VBATT = 3.6 V, Pulse Width =1154µs, Duty Cycle 25% ZIN = ZOUT = 50Ω, TC = 25 °C, BS = LOW, TX_EN = HIGH, VMODE = HIGH ParaMeter MIN tYP MaX uNIt COMMeNts RX Noise Power 10 MHz Offset - -80 -75 dBm 20 MHz Offset - -83 -80 FTX = 915 MHz, RBW = 100 kHz FRX = 925 to 935 MHz, POUT < 28.5 dBm FTX = 915 MHz, RBW = 100 kHz FRX = 935 to 960 MHz, POUT < 28.5 dBm - - Input Return Loss 2.5:1 VSWR PRELIMINARY DATA SHEET - Rev 1.4 02/2009 11 AWT6172 Table 11: Electrical Characteristics for DCS GMSK Mode Unless otherwise specified: VBATT = 3.6 V, PIN = +2.0 dBm, Pulse Width =1154µs, Duty Cycle 25%, ZIN = ZOUT = 50Ω, TC = 25 °C, VRAMP = 2.2 V, BS = HIGH, TX_EN = HIGH, VMODE =LOW COMMeNts ParaMeter MIN tYP MaX uNIt Operating Frequency 1710 - 1785 MHz Input Power 0 +2 +4 dBm Output Power, PMAX 32 33 - 29.5 31 - dBm 45 53 - % Forward Isolation 1 - -40 -30 dBm TX_EN = LOW, PIN = +4 dBm Forward Isolation 2 - -27 -10 dBm TX_EN = HIGH, V RAMP = 0.25 V, PIN = +4 dBm Harmonics Second Harmonic (2FO) Third Harmonic (3FO) 4FO to 15FO - -23 -28 -20 -10 -10 -8 dBm POUT < 32 dBm Degraded Output Power PAE @ PMAX dBm VBATT = 3.2 V, TC = +85 °C PIN = 0 dBm Output Load VSWR = 6:1 All Phases , POUT < 32dBm Stability (all spurious) Ruggedness - - -36 dBm FOUT < 1 GHz, RBW = 3 MHz - - -30 dBm FOUT > 1 GHz, RBW = 3 MHz No Degradation, No Damage RX Noise Power - -87 -78 dBm Input Return Loss - - 2.5:1 VSWR 12 Load VSWR = 10:1 All Phase Angles; POUT < 32dBm FTX = 1785 MHz, RBW = 100 kHz, FRX =1805 to 1880 MHz, POUT < 32 dBm PRELIMINARY DATA SHEET - Rev 1.4 02/2009 AWT6172 Table 12: Electrical Characteristics for PCS GMSK Mode Unless otherwise specified: VBATT = 3.6 V, PIN = +2.0 dBm, Pulse Width =1154µs, Duty Cycle 25%, ZIN = ZOUT = 50Ω, TC = 25 °C, VRAMP = 2.2 V, BS = HIGH, TX_EN = HIGH, VMODE =LOW ParaMeter MIN tYP MaX uNIt 1850 - 1910 MHz Input Power 0 +2 +4 dBm Output Power, PMAX 32 33 - dBm 29.5 31 - dBm 45 52 - % Forward Isolation 1 - -38 -30 dBm TX_EN = LOW, PIN = +4 dBm Forward Isolation 2 - -26 -10 dBm TX_EN = HIGH, V RAMP = 0.25 V, PIN = +4 dBm Harmonics Second Harmonic (2Fo) Third Harmonic (3Fo) 4Fo to 15Fo - -25 -30 -20 -10 -10 -8 dBm Operating Frequency ( Fo ) Degraded Output Power PAE @ PMAX COMMeNts VBATT = 3.2 V, TC = +85 °C PIN = 0 dBm POUT 32 dBm Output Load VSWR = 6:1, All POUT 32 dBm Stability (all spurious) Ruggedness - - -36 dBm FOUT < 1 GHz, RBW = 3 MHz - - -30 dBm FOUT > 1 GHz, RBW = 3 MHz No Degradation, No Damage RX Noise Power - -88 -79 dBm Input Return Loss - - 2.5:1 VSWR Load VSWR = 10:1, All Phase Angles; POUT 32 dBm FTX = 1910 MHz, RBW = 100 kHz FRX = 1930 to 1990 MHz, POUT < 32 dBm PRELIMINARY DATA SHEET - Rev 1.4 02/2009 13 AWT6172 Table 13: Electrical Characteristics for DCS EDGE Mode Unless otherwise specified: VBATT = 3.6 V, Pulse Width =1154µs, Duty Cycle 25%, ZIN = ZOUT = 50Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH, VMODE = HIGH ParaMeter MIN tYP MaX uNIt 1710 - 1785 MHz Linear POUT (High Power Mode) Linear POUT (Low Power Mode) 27.5 19 - - dBm Linear Degraded Output Power LD_POUT (High Power Mode) (1) LD_POUT (Low Power Mode) (2) 25 16.5 - - dBm Linear Gain (High Power Mode) 34 37 40 dB VBIAS = High Linear Gain (Low Power Mode) 30 36 40 dB VBIAS = Low Gain Variation - -0.04 - dB/oC Power-Added Efficiency - 20 - % Icq (Low Power Mode) - 120 - mA Error Vector Magnitude (EVM) - 2 5 % Linearity ACPR1 ACPR2 ACPR3 - -39 -65 -78 -33 -58 -64 dBc Harmonics Second Harmonic (2Fo) Third Harmonic (3Fo) 4Fo to 7Fo - -38 -47 -20 -20 -20 -10 dBm Operating Frequency ( Fo ) COMMeNts VBIAS = High VBIAS = Low Meets ACPR and EVM limits specified under nominal conditions -20 oC TC +85 oC POUT = 27.5 dBm VBIAS = Low POUT < 27.5 dBm, BW = 30 kHz Fo 200 kHz Fo 400 kHz Fo 600 kHz POUT < 27.5 dBm Output Load VSWR = 6:1 All Phases, POUT < 27.5 dBm Stability (all spurious) Ruggedness - - -36 dBm FOUT < 1 GHz, RBW = 3 MHz - - -30 dBm FOUT > 1 GHz, RBW = 3 MHz No Degradation, No Damage RX Noise Power - -81 Input Return Loss - - -76 dBm Load VSWR = 10:1, All Phase Angles; POUT 27.5 dBm FTX = 1785 MHz, RBW = 100 kHz FRX = 1805 to 1880 MHz POUT < 27.5 dBm 2.5:1 VSWR Notes: (1) VBIAS = High, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC). (2) VBIAS = Low, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC). 14 PRELIMINARY DATA SHEET - Rev 1.4 02/2009 AWT6172 Table 14: Electrical Characteristics for PCS EDGE Mode Unless otherwise specified: VBATT = 3.6 V, Pulse Width =1154µs, Duty Cycle 25%, ZIN = ZOUT = 50Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH, VMODE = HIGH ParaMeter MIN tYP MaX uNIt 1850 - 1910 MHz Linear POUT (High Power Mode) Linear POUT (Low Power Mode) 27.5 19 - - dBm Linear Degraded Output Power LD_POUT (High Power Mode) (1) LD_POUT (Low Power Mode) (2) 25 16.5 - - dBm Linear Gain (High Power Mode) 33.0 36 39.5 dB VBIAS = High Linear Gain (Low Power Mode) 29 35 39 dB VBIAS = Low Gain Variation - -0.044 - dB/oC Power-Added Efficiency - 20 - % Icq (Low Power Mode) - 120 - mA Error Vector Magnitude (EVM) - 2 5 % Linearity ACPR1 ACPR2 ACPR3 - -38 -64 -77 -33 -57 -64 Harmonics Second Harmonic (2Fo) Third Harmonic (3Fo) 4Fo to 15Fo - -40 -46 -20 -20 -20 -10 Operating Frequency ( Fo ) dBc dBm COMMeNts VBIAS = High VBIAS = Low Meets ACPR and EVM limits specified under nominal conditions -20 oC TC +85 oC POUT = 27.5 dBm VBIAS = Low POUT < 27.5 dBm, BW = 30 kHz Fo 200 kHz Fo 400 kHz Fo 600 kHz POUT < 27.5 dBm Output Load VSWR = 6:1 All Phases, POUT < 27.5 dBm Stability (all spurious) Ruggedness - - -36 dBm FOUT < 1 GHz, RBW = 3 MHz - - -30 dBm FOUT > 1 GHz, RBW = 3 MHz No Degradation, No Damage RX Noise Power - -82 Input Return Loss - - -76 dBm Load VSWR = 10:1, All Phase Angles; POUT 27.5 dBm FTX = 1910 MHz, RBW = 100 kHz FRX = 1930 to 1990 MHz POUT < 27.5 dBm 2.5:1 VSWR Notes: (1) VBIAS = High, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC). (2) VBIAS = Low, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC). PRELIMINARY DATA SHEET - Rev 1.4 02/2009 15 AWT6172 Application Information DCS/PCS_IN GSM850/900_IN DCS/PCS_OUT GSM850/900_OUT Figure 3: Recommended Application Circuit 16 PRELIMINARY DATA SHEET - Rev 1.4 02/2009 AWT6172 Package Outline Figure 4: M33 Package Outline - 20 Pin 6 mm x 6 mm x 1.1 mm Surface Mount Module PRELIMINARY DATA SHEET - Rev 1.4 02/2009 17 AWT6172 Figure 5: Recommended PCB Footprint 18 PRELIMINARY DATA SHEET - Rev 1.4 02/2009 AWT6172 Figure 5B: Recommended PCB Footprint Notes PRELIMINARY DATA SHEET - Rev 1.4 02/2009 19 AWT6172 ORDERING INFORMATION OrDer NuMBer teMPerature raNGe PaCKaGe DesCrIPtION COMPONeNt PaCKaGING AWT6172RM33P8 -20 °C to +85°C RoHS-compliant 20 Pin 6 mm x 6 mm x 1.1 mm Surface Mount Module Tape and Reel, 2500 pieces per reel AWT6172RM33P9 -20 °C to +85°C RoHS-compliant 20 Pin 6 mm x 6 mm x 1.1 mm Surface Mount Module Partial Tape and Reel -20 °C to +85°C Halogen-free and RoHS-compliant 20 pin 6mm x 6mm x 1.1mm Surface Mount Module Tape and Reel, 2500 pieces per reel -20 °C to +85°C Halogen-free and RoHS-compliant 20 pin 6mm x 6mm x 1.1mm Surface Mount Module Partial Tape and Reel AWT6172HM33P8 AWT6172HM33P9 ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: [email protected] IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 20 PRELIMINARY DATA SHEET - Rev 1.4 02/2009