ONSEMI BC858CDXV6T5

BC858CDXV6T1,
BC858CDXV6T5
Dual General Purpose
Transistor
PNP Dual
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This transistor is designed for general purpose amplifier
applications. It is housed in the SOT-563 which is designed for low
power surface mount applications.
• Lead-Free Solder Plating
(3)
(2)
(1)
Q1
Q2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector - Emitter Voltage
VCEO
-30
V
Collector - Base Voltage
VCBO
-30
V
Emitter - Base Voltage
VEBO
-5.0
V
IC
-100
mAdc
Collector Current Continuous
(4)
(5)
6
Total Device Dissipation
Symbol
Max
Unit
PD
357
(Note 1)
2.9
(Note 1)
mW
TA = 25°C
Derate above 25°C
Thermal Resistance
Ambient
Total Device Dissipation
Symbol
Max
Unit
PD
500
(Note 1)
4.0
(Note 1)
mW
Thermal Resistance Junction-to-Ambient
Junction and Storage
Temperature Range
March, 2003 - Rev. 2
3L = Specific Device Code
D = Date Code
mW/°C
ORDERING INFORMATION
RJA
250
(Note 1)
°C/W
TJ, Tstg
- 55 to +150
°C
1. FR-4 @ Minimum Pad
 Semiconductor Components Industries, LLC, 2003
SOT-563
CASE 463A
PLASTIC
3L D
°C/W
Derate above 25°C
3
MARKING DIAGRAM
350
(Note 1)
TA = 25°C
2
mW/°C
RJA
Junction-to-
Characteristic
(Both Junctions Heated)
54
1
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
(6)
1
Device
Package
Shipping
BC858CDXV6T1
SOT-563
4 mm pitch
4000/Tape & Reel
BC858CDXV6T5
SOT-563
2 mm pitch
8000/Tape & Reel
Publication Order Number:
BC858CDXV6T1/D
BC858CDXV6T1, BC858CDXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
-30
-
-
-30
-
-
-30
-
-
-5.0
-
-
-
-
-15
-4.0
420
270
520
800
-
-
-0.3
-0.65
-
-0.7
-0.9
-
-0.6
-
-
-0.75
-0.82
fT
100
-
-
MHz
Output Capacitance
(VCB = -10 V, f = 1.0 MHz)
Cob
-
-
4.5
pF
Noise Figure
(IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 k,
f = 1.0 kHz, BW = 200 Hz)
NF
-
-
10
dB
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
(IC = -10 mA)
V(BR)CEO
Collector - Emitter Breakdown Voltage
(IC = -10 A, VEB = 0)
V(BR)CES
Collector - Base Breakdown Voltage
(IC = -10 A)
V(BR)CBO
Emitter - Base Breakdown Voltage
(IE = -1.0 A)
V(BR)EBO
Collector Cutoff Current (VCB = -30 V)
Collector Cutoff Current (VCB = -30 V, TA = 150°C)
ICBO
V
V
V
V
nA
A
ON CHARACTERISTICS
DC Current Gain
(IC = -10 A, VCE = -5.0 V)
(IC = -2.0 mA, VCE = -5.0 V)
hFE
Collector - Emitter Saturation Voltage
(IC = -10 mA, IB = -0.5 mA)
(IC = -100 mA, IB = -5.0 mA)
VCE(sat)
Base - Emitter Saturation Voltage
(IC = -10 mA, IB = -0.5 mA)
(IC = -100 mA, IB = -5.0 mA)
VBE(sat)
Base - Emitter On Voltage
(IC = -2.0 mA, VCE = -5.0 V)
(IC = -10 mA, VCE = -5.0 V)
VBE(on)
-
V
V
V
SMALL- SIGNAL CHARACTERISTICS
Current - Gain - Bandwidth Product
(IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz)
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2
BC858CDXV6T1, BC858CDXV6T5
TYPICAL CHARACTERISTICS
−1.0
1.5
TA = 25°C
−0.9
VCE = −10 V
TA = 25°C
VBE(sat) @ IC/IB = 10
−0.8
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
1.0
0.7
0.5
−0.7
VBE(on) @ VCE = −10 V
−0.6
−0.5
−0.4
−0.3
−0.2
0.3
VCE(sat) @ IC/IB = 10
−0.1
0.2
−0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−50
IC, COLLECTOR CURRENT (mAdc)
0
−0.1 −0.2
−100 −200
1.0
−2.0
TA = 25°C
−1.6
−1.2
−0.8
IC =
−10 mA
IC = −50 mA
IC = −200 mA
IC = −100 mA
IC = −20 mA
−0.4
0
−0.02
−55°C to +125°C
1.2
1.6
2.0
2.4
2.8
−10 −20
−0.1
−1.0
IB, BASE CURRENT (mA)
−0.2
10
Cib
7.0
TA = 25°C
5.0
Cob
3.0
2.0
1.0
−0.4 −0.6
−1.0
−2.0
−4.0 −6.0
−10
−10
−1.0
IC, COLLECTOR CURRENT (mA)
−100
Figure 4. Base-Emitter Temperature Coefficient
f,
T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
Figure 3. Collector Saturation Region
C, CAPACITANCE (pF)
−100
−50
Figure 2. “Saturation” and “On” Voltages
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Normalized DC Current Gain
−0.5 −1.0 −2.0
−5.0 −10 −20
IC, COLLECTOR CURRENT (mAdc)
−20 −30 −40
400
300
200
150
VCE = −10 V
TA = 25°C
100
80
60
40
30
20
−0.5
−1.0
−2.0 −3.0
−5.0
−10
−20
−30
−50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current-Gain - Bandwidth Product
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3
BC858CDXV6T1, BC858CDXV6T5
INFORMATION FOR USING THE SOT-563 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm inches
SOT-563
SOT-563 POWER DISSIPATION
SOLDERING PRECAUTIONS
The power dissipation of the SOT-563 is a function of
the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature
of the die, RJA, the thermal resistance from the device
junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-563
package, PD can be calculated as follows:
PD =
The melting temperature of solder is higher than the
rated temperature of the device. When the entire device is
heated to a high temperature, failure to complete soldering
within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during cooling.
TJ(max) - TA
RJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 150 milliwatts.
PD =
150°C - 25°C
833°C/W
= 150 milliwatts
The 833°C/W for the SOT-563 package assumes the use
of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts.
There are other alternatives to achieving higher power dissipation from the SOT-563 package. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad. Using a board material such
as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
* Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage
to the device
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4
BC858CDXV6T1, BC858CDXV6T5
PACKAGE DIMENSIONS
SOT-563, 6 LEAD
CASE 463A-01
ISSUE O
A
-X-
5
6
1
2
C
K
4
B
-Y-
3
D
G
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
EMITTER 1
BASE 1
COLLECTOR 2
EMITTER 2
BASE 2
COLLECTOR 1
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
J
5 PL
6
0.08 (0.003)
EMITTER 1
EMITTER2
BASE 2
COLLECTOR 2
BASE 1
COLLECTOR 1
DIM
A
B
C
D
G
J
K
S
S
M
STYLE 3:
PIN 1.
2.
3.
4.
5.
6.
X Y
STYLE 4:
PIN 1.
2.
3.
4.
5.
6.
CATHODE 1
CATHODE 1
ANODE/ANODE 2
CATHODE 2
CATHODE 2
ANODE/ANODE 1
COLLECTOR
COLLECTOR
BASE
EMITTER
COLLECTOR
COLLECTOR
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5
MILLIMETERS
MIN
MAX
1.50
1.70
1.10
1.30
0.50
0.60
0.17
0.27
0.50 BSC
0.08
0.18
0.10
0.30
1.50
1.70
INCHES
MIN
MAX
0.059
0.067
0.043
0.051
0.020
0.024
0.007
0.011
0.020 BSC
0.003
0.007
0.004
0.012
0.059
0.067
BC858CDXV6T1, BC858CDXV6T5
Thermal Clad is a registered trademark of the Bergquist Company.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
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P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
Email: [email protected]
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Phone: 81-3-5773-3850
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800-282-9855 Toll Free USA/Canada
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6
BC858CDXV6T1/D