BCP53T1 Series Preferred Devices PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. http://onsemi.com • High Current: 1.5 Amps • NPN Complement is BCP56 • The SOT-223 Package can be soldered using wave or reflow. The • • MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel Use BCP53T1 to order the 7 inch/1000 unit reel. Use BCP53T3 to order the 13 inch/4000 unit reel. Device Marking: BCP53T1 = AH BCP53–10T1 = AH–10 BCP53–16T1 = AH–16 COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCEO –80 Vdc Collector-Base Voltage VCBO –100 Vdc Emitter-Base Voltage VEBO –5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25°C (Note 1.) Derate above 25°C PD 1.5 12 Watts mW/°C –65 to +150 °C Rating Operating and Storage Temperature Range TJ, Tstg Thermal Resistance, Junction to Ambient (surface mounted) Lead Temperature for Soldering, 0.0625″ from case Time in Solder Bath Symbol Max Unit RθJA 83.3 °C/W TL °C Sec 260 10 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. Semiconductor Components Industries, LLC, 2001 November, 2000 – Rev. 2 1 2 MARKING DIAGRAM 3 SOT–223 CASE 318E STYLE 1 AHxxx AHxxx = Device Code xxx = –10 or –16 ORDERING INFORMATION THERMAL CHARACTERISTICS Characteristic 4 1 Device Package Shipping BCP53T1 SOT–223 1000/Tape & Reel BCP53–10T1 SOT–223 1000/Tape & Reel BCP53–16T1 SOT–223 1000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Publication Order Number: BCP53T1/D BCP53T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = –100 µAdc, IE = 0) V(BR)CBO –100 – – Vdc Collector-Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) V(BR)CEO –80 – – Vdc Collector-Emitter Breakdown Voltage (IC = –100 µAdc, RBE = 1.0 kohm) V(BR)CER –100 – – Vdc Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V(BR)EBO –5.0 – – Vdc Collector-Base Cutoff Current (VCB = –30 Vdc, IE = 0) ICBO – – –100 nAdc Emitter-Base Cutoff Current (VEB = –5.0 Vdc, IC = 0) IEBO – – –10 µAdc DC Current Gain (IC = –5.0 mAdc, VCE = –2.0 Vdc) All Part Types (IC = –150 mAdc, VCE = –2.0 Vdc) BCP53T1 BCP53–10T1 BCP53–16T1 (IC = –500 mAdc, VCE = –2.0 Vdc) All Part Types hFE 25 40 63 100 25 – – – – – – 250 160 250 – – Collector-Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc) VCE(sat) – – –0.5 Vdc Base-Emitter On Voltage (IC = –500 mAdc, VCE = –2.0 Vdc) VBE(on) – – –1.0 Vdc fT – 50 – MHz OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Current-Gain – Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 35 MHz) hFE , DC CURRENT GAIN f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) TYPICAL ELECTRICAL CHARACTERISTICS 500 VCE = 2 V 200 100 50 20 1 3 5 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000 500 300 VCE = 2 V 100 50 20 1 Figure 1. DC Current Gain Figure 2. Current Gain Bandwidth Product 1 V(BE)sat @ IC/IB = 10 C, CAPACITANCE (pF) V, VOLTAGE (VOLTS) 0.8 V(BE)on @ VCE = 2 V 0.6 0.4 0.2 V(CE)sat @ IC/IB = 10 0 1 10 1000 10 100 IC, COLLECTOR CURRENT (mA) 100 120 110 100 90 80 70 60 50 40 30 20 10 0 1000 Cib Cob 0 2 4 6 8 10 12 14 IC, COLLECTOR CURRENT (mA) V, VOLTAGE (VOLTS) Figure 3. Saturation and “ON” Voltages Figure 4. Capacitances http://onsemi.com 2 16 18 20 BCP53T1 Series INFORMATION FOR USING THE SOT–223 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.15 3.8 0.079 2.0 SOT–223 0.091 2.3 0.248 6.3 0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 0.059 1.5 mm inches SOT–223 POWER DISSIPATION The power dissipation of the SOT–223 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet for the SOT–223 package, PD can be calculated as follows. PD = the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 1.5 watts. PD = 150°C – 25°C 83.3°C/W = 1.50 watts The 83.3°C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 1.5 watts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, a higher power dissipation of 1.6 watts can be achieved using the same footprint. TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into SOLDERING PRECAUTIONS • The soldering temperature and time should not exceed The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 3 BCP53T1 Series PACKAGE DIMENSIONS SOT–223 CASE 318E–04 ISSUE K A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S 1 2 3 B D L G J C 0.08 (0003) M H K INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0 10 S 0.264 0.287 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0 10 6.70 7.30 BASE COLLECTOR EMITTER COLLECTOR Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800–282–9855 Toll Free USA/Canada http://onsemi.com 4 BCP53T1/D