BCR08AM-14A Triac Low Power Use REJ03G1200-0200 Rev.2.00 Nov 30, 2007 Features • • • • IT (RMS) : 0.8 A VDRM : 700 V IFGT I, IRGT I, IRGT III : 5 mA Planar Passivation Type Outline RENESAS Package code: PRSS0003EA-A (Package name: TO-92) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 3 2 Applications Washing machine, electric fan, air cleaner, other general purpose control applications Maximum Ratings Parameter Symbol Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 REJ03G1200-0200 Page 1 of 6 Rev.2.00 Nov 30, 2007 VDRM VDSM Voltage class 14 700 840 Unit V V BCR08AM-14A Parameter RMS on-state current Symbol IT (RMS) Ratings 0.8 Unit A Surge on-state current ITSM 8 A I2 t 0.26 A2s PGM PG (AV) VGM IGM Tj Tstg — 1 0.1 6 0.5 – 40 to +125 – 40 to +125 0.23 W W V A °C °C g Symbol IDRM VTM Min. — — Typ. — — Max. 1.0 2.0 I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine full wave 360° conduction, Tc = 67°C 60 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current Typical value Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Unit mA V Ι VFGTΙ — — 2.0 V ΙΙ VRGTΙ — — 2.0 V ΙΙΙ VRGTΙΙΙ — — 2.0 V Gate trigger voltageNote2 Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 1.2 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Ι IFGTΙ — — 5 mA ΙΙ IRGTΙ — — 5 mA ΙΙΙ IRGTΙΙΙ — — 5 mA VGD Rth (j-c) 0.1 — — — — 50 V °C/W Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 0.5 — — V/µs Tj = 125°C Note2 Gate trigger current Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 0.4 A/ms 3. Peak off-state voltage VD = 400 V REJ03G1200-0200 Page 2 of 6 Rev.2.00 Nov 30, 2007 Commutating voltage and current waveforms (inductive load) Supply Voltage Main Current Main Voltage (dv/dt)c Time (di/dt)c Time Time VD BCR08AM-14A Performance Curves Rated Surge On-State Current Maximum On-State Characteristics 10 Tc = 25°C 9 Surge On-State Current (A) On-State Current (A) 101 7 5 3 2 100 7 5 3 2 8 7 6 5 4 3 2 1 1.5 2.0 2.5 3.0 3.5 100 7 5 3 2 10–1 7 5 3 5 7 102 Gate Trigger Current vs. Junction Temperature VGM = 6V 103 7 5 Typical Example PGM = 1W PG(AV) = 0.1W VGT IGM = 0.5A IFGT I, IRGT I, IRGT III VGD = 0.1V 3 5 7 101 2 3 5 7 102 23 5 7103 3 2 102 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Maximum Transient Thermal Impedance Characteristics (Junction to case, Junction to ambient) Gate Trigger Voltage vs. Junction Temperature 103 7 5 Typical Example 3 2 102 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Rev.2.00 Nov 30, 2007 102 2 3 5 7 103 2 3 5 7104 2 3 5 7105 3 Transient Thermal Impedance (°C/W) 100 (%) Gate Trigger Voltage (Tj = t°C) Gate Trigger Voltage (Tj = 25°C) 2 3 Gate Characteristics Gate Current (mA) REJ03G1200-0200 Page 3 of 6 5 7 101 Conduction Time (Cycles at 60Hz) Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 7 5 3 2 2 3 On-State Voltage (V) 3 2 101 0 100 4.0 100 (%) 10–1 1.0 2 Junction to ambient 102 7 5 Junction to case 3 2 101 7 5 3 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR08AM-14A Allowable Case Temperature vs. RMS On-State Current 2.0 160 1.8 140 1.6 1.4 1.2 1.0 0.8 0.6 360° Conduction Resistive, inductive loads 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Case Temperature (°C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 120 100 80 60 40 20 0 1.4 Curves apply regardless of conduction angle 360° Conduction Resistive, inductive loads 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 160 Ambient Temperature (°C) 140 120 Curves apply regardless of conduction angle Natural Convection No Fins 100 80 360° Conduction Resistive, inductive loads 60 40 20 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = t°C) Repetitive Peak Off-State Current (Tj = 25°C) Allowable Ambient Temperature vs. RMS On-State Current RMS On-State Current (A) 100 (%) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature 100 (%) Holding Current vs. Junction Temperature. 103 7 5 Laching Current (mA) Holding Current (Tj = t°C) Holding Current (Tj = 25°C) 2 102 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature REJ03G1200-0200 Page 4 of 6 Laching Current vs. Junction Temperature Typical Example 3 Rev.2.00 (°C) Nov 30, 2007 (°C) 102 7 5 3 2 Distribution T2+, G– Typical Example 101 7 5 3 2 100 7 + + 5 T2 , G 3 Typical 2 Example 10–1 –40 0 T2– , G– Typical Example 40 80 120 Junction Temperature (°C) 160 BCR08AM-14A 100 (%) 160 Typical Example 140 Breakover Voltage (dv/dt = xV/µs) Breakover Voltage (dv/dt = 1V/µs) 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 Typical Example Tj = 125°C 140 120 100 80 I Quadrant III Quadrant 60 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Gate Trigger Current vs. Gate Current Pulse Width 100 (%) Commutation Characteristics Conditions VD = 200V IT = 1A τ = 500µs Tj = 125°C 3 2 Minimum Characteristics Value 3 2 2 5 7 100 3 I Quadrant 2 3 6 A Test Procedure I V Test Procedure II 6 A 6V V RG Test Procedure III Rev.2.00 A 6V RG V Nov 30, 2007 RGT III III IIRGT 102 7 5 IFGT I IRGT I 3 2 2 3 5 7 101 2 3 5 7 102 Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits 6V Typical Example 2 101 0 10 5 7 101 Rate of Decay of On-State Commutating Current (A/ms) 6 103 7 5 3 III Quadrant 100 7 5 REJ03G1200-0200 Page 5 of 6 160 Rate Of Rise Of Off-State Voltage (V/µs) 101 7 Typical Example 5 10–1 10–1 Breakover Voltage vs. Rate Of Rise Of Off-State Voltage Junction Temperature (°C) Gate Trigger Current (tw) Gate Trigger Current (DC) Critical Rate Of Rise Of Off-State Commutating Voltage (V/µs) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) 100 (%) Breakover Voltage vs. Junction Temperature RG BCR08AM-14A Package Dimensions Package Name TO-92* JEITA Package Code SC-43A RENESAS Code PRSS0003EA-A Previous Code MASS[Typ.] 0.23g Unit: mm φ5.0Max 11.5Min 5.0Max 4.4 1.25 1.25 3.6 1.1 Circumscribed circle φ0.7 Order Code Lead form Straight type Lead form Form A8 Standard packing Vinyl sack Vinyl sack Taping Quantity 500 500 2000 Standard order code Type name Type name – Lead forming code Type name – TB Note : Please confirm the specification about the shipping in detail. REJ03G1200-0200 Page 6 of 6 Rev.2.00 Nov 30, 2007 Standard order code example BCR08AM-14A BCR08AM-14A-A6 BCR08AM-14A-TB Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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