Power Management Switch ICs for PCs and Digital Consumer Products Load Switch ICs for Portable Equipment No.11029ECT19 BD6528HFV,BD6529GUL ●Description Power switch for memory card Slot (BD6528HFV, BD6529GUL) is a high side switch IC having one circuit of N-channel Power MOSFET. This switch IC achieves ON resistance of 100mΩ with BD6529GUL; and 110mΩ with BD6528HFV. Operations from low input voltage (VIN≦2.7V) is possible; made for use of various switch applications. BD6524HFV is available in a space-saving HVSOF6 package. BD6529GUL is available in a space-saving VCSP-6 package. ●Features 1) Single channel of Low On-Resistance (Typ. = 100mΩ) N-channel MOSFET built in 2) 500mA output current 3) Low voltage switch capability 4) Soft-start function 5) Output discharge circuit 6) Reverse current flow blocking at switch off 7) HVSOF6 package for BD6528HFV VCSP50L1 package for BD6529GUL ●Applications Memory card slots of Mobile phone, Digital still camera, PDA, MP3 player, PC, etc. ●Line up matrix Part Number ON resistance Output current Discharge circuit Logic Control Input BD6528HFV 110mΩ 500mA ○ High BD6529GUL 100mΩ 500mA ○ High Package HVSOF6 1.6 x 3.0 mm VCSP50L1 1.5 x 1.0 mm ●Absolute maximum ratings Parameter Symbol Ratings Unit VDD -0.3 ~ 6.0 V Supply voltage VIN voltage VIN -0.3 ~ 6.0 V EN voltage VEN -0.3 ~ VDD + 0.3 V VOUT voltage VOUT -0.3 ~ 6.0 V Storage temperature TSTG -55 ~ 150 ℃ Power dissipation *1 *2 * * Pd 849 *1 (BD6528HFV) 575 *2 (BD6529GUL) mW Mounted on 70mm * 70mm * 1.6mm Glass-epoxy PCB. Derating: 6.8mW /℃ at Ta > 25℃ Mounted on 50mm * 58mm * 1.75mm Glass-epoxy PCB. Derating: 4.6mW / ℃ at Ta > 25℃ This product is not designed for protection against radioactive rays. Operation is not guaranteed. ●Operating conditions Parameter Symbol Operating voltage Switch input voltage Operation temperature Output current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. VDD Ratings Min. Typ. Max. 2.7 3.3 4.5 Unit V VIN 0 1.2 2.7 V TOPR -25 25 85 ℃ ILO 0 - 500 mA 1/11 2011.05 - Rev.C Technical Note BD6528HFV,BD6529GUL ●Electrical characteristics ○BD6528HFV(unless otherwise specified, VDD =3.3V, VIN = 1.2V, Ta = 25℃) Limits Parameter Symbol Unit Min. Typ. Max. Condition [Current consumption] Operating current IDD - 20 30 µA VEN = 1.2V Standby current ISTB - 0.01 1 µA VEN = 0V VENH 1.2 - - V High level input VENL - - 0.4 V Low level input IEN -1 - 1 µA VEN = 0V or VEN = 1.2V On-resistance RON - 110 - mΩ IOUT = 500mA Switch leakage current ILEAK - 0.01 10 µA VEN = 0V, VOUT = 0V Output rise time TON1 - 0.5 1 ms RL = 10Ω, VOUT 10% → 90% Output turn-on time TON2 - 0.6 2 ms RL = 10Ω, VEN High →VOUT 90% Output fall time TOFF1 - 1 20 µs RL = 10Ω, VOUT 90% → 10% Output turn-off time TOFF2 - 15 100 µs RL = 10Ω, VEN Low →VOUT 10% Discharge on-resistance RDISC - 70 110 Ω IOUT = -1mA, VEN = 0V Parameter IDISC - 15 20 mA VOUT = 3.3V, VEN = 0V [I/O] EN input voltage EN input current [Power switch] [Discharge circuit] ○BD6529GUL(unless otherwise specified, VDD =3.3V, VIN = 1.2V, Ta = 25℃) Limits Parameter Symbol Unit Min. Typ. Max. Condition [Current consumption] Operating current IDD - 20 30 µA VEN = 1.2V Standby current ISTB - 0.01 1 µA VEN = 0V VENH 1.2 - - V High level input VENL - - 0.4 V Low level input IEN -1 - 1 µA VEN = 0V or VEN = 1.2V On Resistance RON - 100 - mΩ IOUT = 500mA Switch leakage current ILEAK - 0.01 10 µA VEN = 0V, VOUT = 0V Output turn on rise time TON1 - 0.5 1 ms RL = 10Ω, VOUT 10% → 90% [I/O] EN input voltage EN input current [Power switch] Output turn on time TON2 - 0.6 2 ms RL = 10Ω, VEN High →VOUT 90% Output turn off fall time TOFF1 - 0.1 4 µs RL = 10Ω, VOUT 90% → 10% Output turn off time TOFF2 - 1 6 µs RL = 10Ω, VEN Low →VOUT 10% Discharge on-resistance RDISC - 70 110 Ω IOUT = -1mA, VEN = 0V Discharge current IDISC - 15 20 mA VOUT = 3.3V, VEN = 0V [Discharge circuit] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/11 2011.05 - Rev.C Technical Note BD6528HFV,BD6529GUL ●Test circuit V IN VIN VOUT VDD VOUT GND EN V DD V EN RL CL Fig.1 Measurement circuit ●Switch output turn ON/OFF timing VEN 50% 50% TON2 TOFF2 90% VOUT 90% 10% 10% TON1 TOFF1 Fig.2 Timing diagrams www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/11 2011.05 - Rev.C Technical Note BD6528HFV,BD6529GUL ●Reference data 30 30 1.0 VDD=3.3V 20 15 10 5 20 15 10 3 4 0 -50 5 SUPPLY VOLTAGE : VDD [V] 0.2 0.0 0 50 100 2 0.4 0.2 VDD=3.3V ENABLE INPUT VOLTAGE : VEN [V] ENABLE INPUT VOLTAGE: VEN [V] 0.6 1.5 1.0 0.5 2 Fig.6 Standby current EN disable 3 4 SUPPLY VOLTAGE : VDD [V] 0.0 -50 100 50 200 3 4 SUPPLY VOLTAGE : VDD [V] 100 0 -50 50.0 0.0 ON RESISTANCE : RON [mΩ] Ta=25ºC Ta=-25ºC 400 600 OUTPUT CURRENT : IOUT [mA] Fig.12 On-resistance vs. IOUT (BD6528HFV) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 1 2 3 INPUT VOLTAGE : VIN [V] Fig.11 On-resistance vs. VIN (BD6528HFV) 200 150 100 VDD=3.3V VIN=1.2V IOUT=100mA 100 50 0 200 Ta=-25ºC 0 Ta=25ºC VIN=1.2V IOUT=100mA 150 Ta=85ºC Ta=25ºC 50 0 50 100 AMBIENT TEMPERATURE : Ta [°C] 200 100.0 100 Fig.10 On-resistance vs. temperature (BD6528HFV) VDD=3.3V VIN=1.2V 150.0 Ta=85ºC ON RESISTANCE : RON [mΩ] 200.0 150 50 5 Fig.9 On-resistance vs. VDD (BD6528HFV) VDD=3.3V IOUT=100mA VDD=3.3V VIN=1.2V IOUT=100mA 150 0 0 50 100 AMBIENT TEMPERATURE : Ta [°C] Fig.8 EN input voltage ON RESISTANCE : RON [mΩ] ON RESISTANCE : RON [mΩ] Ta=25ºC VIN=1.2V IOUT=100mA 0 0.5 5 200 2 1.0 Fig.7 EN input voltage 200 150 1.5 0.0 0 50 100 AMBIENT TEMPERATURE : Ta [°C] 5 2.0 Ta=25ºC 0.8 0.0 -50 3 4 SUPPLY VOLTAGE : VDD [V] Fig.5 Standby current EN disable 2.0 VDD=3.3V STANDBY CURRENT : ISTB[uA] 0.4 Fig.4 Operating current EN enable 1.0 ON RESISTANCE : RON [mΩ] 0.6 AMBIENT TEMPERATURE : Ta [°C] Fig.3 Operating current EN enable ON RESISTANCE : RON [mΩ] 0.8 5 0 2 Ta=25ºC 25 STANDBY CURRENT : ISTB[uA] 25 OPERATING CURRENT : IDD [μA] OPERATING CURRENT : IDD [µA] Ta=25ºC 2 3 4 SUPPLY VOLTAGE : VDD [V] Fig.13 On-resistance vs. VDD (BD6529GUL) 4/11 5 50 0 -50 0 50 100 AMBIENT TEMPERATURE : Ta [°C] Fig.14 On-resistance vs. temperature (BD6529GUL) 2011.05 - Rev.C Technical Note BD6528HFV,BD6529GUL 200 1.0 200 VDD=3.3V IOUT=100mA VDD=3.3V VIN=1.2V Ta=85ºC 100 Ta=25ºC Ta=-25ºC 50 0 Ta=85ºC 100 Ta=25ºC Ta=-25ºC 50 1 2 INPUT VOLTAGE : VIN [V] 3 200 2 600 1.2 0.8 0.4 0.8 0.0 2 100 1.2 0.4 0.0 50 3 4 5 -50 SUPPLY VOLTAGE : VDD [V] AMBIENT TEMPERATURE : Ta [°C] Fig.18 Output rise time Ta=25ºC RL=10Ω 40 TURN OFF TIME : TOFF2 [us] FALL TIME : TOFF1 [us] 0.4 100 50 VDD=3.3V RL=10Ω 0.8 0.6 50 Fig.20 Output turn-on time 1.0 Ta=25ºC RL=10Ω 0 AMBIENT TEMPERATURE : Ta [°C] Fig.19 Output turn-on time 1.0 0.8 VDD=3.3V RL=10Ω 1.6 TURN ON TIME : TON2 [ms] TURN ON TIME : TON2 [ms] 0.4 5 2.0 Ta=25ºC RL=10Ω 1.6 0.6 4 Fig.17 Output rise time 2.0 VDD=3.3V RL=10Ω 0 3 SUPPLY VOLTAGE : VDD [V] Fig.16 On-resistance vs. IOUT (BD6529GUL) 0.2 FALL TIME : TOFF1[us] 400 OUTPUT CURRENT : IOUT [mA] 1 0 -50 0.4 0.0 0 Fig.15 On-resistance vs. VIN (BD6529GUL) 0.8 0.6 0.2 0 0 RISE TIME : TON1 [ms] 150 RISE TIME : TON1 [ms] ON RESISTANCE : RON [mΩ] ON RESISTANCE : RON[mΩ] 150 Ta=25ºC RL=10Ω 0.8 0.6 0.4 30 20 BD6528HFV 0.2 0.2 10 0.0 0.0 0 BD6529GUL 2 3 4 SUPPLY VOLTAGE : VDD [V] -50 5 Fig.21 Output fall time 2 100 20 BD6528HFV 10 BD6529GUL 0 0 50 100 AMBIENT TEMPERATURE : Ta [°C] Fig.24 Output turn-off time www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5 200 VDD=3.3V 150 100 50 0 -50 4 Fig.23 Output turn-off time DISCHARSE ON RESISTANCE : RDISC [O] 30 3 SUPPLY VOLTAGE : VDD [V] 200 VDD=3.3V RL=10Ω DISCHARSE ON RESISTANCE : RDISC[Ω] TURN OFF TIME : TOFF2[us] 50 Fig.22 Output fall time 50 40 0 AMBIENT TEMPERATURE : Ta [°C] 2 3 4 5 SUPPLY VOLTAGE : VDD [V] Fig.25 Discharge on-resistance 5/11 Ta=25ºC 150 100 50 0 -50 0 50 100 AMBIENT TEMPERATURE : Ta [°C] Fig.26 Discharge on-resistance 2011.05 - Rev.C Technical Note BD6528HFV,BD6529GUL ●Waveform data VEN (0.5V/div.) VEN (0.5V/div.) VOUT (0.2V/div.) VDD=3.3V VIN=1.2V RL=500Ω CL=4.7uF IOUT (10mA/div.) VDD=3.3V VIN=1.2V RL=500Ω CL=4.7uF VOUT (0.2V/div.) IOUT (10mA/div.) TIME (0.2ms/div.) TIME (0.2ms/div.) Fig.27 Output turn-on response BD6528HFV Fig.28 Output turn-off response BD6528HFV VEN (0.5V/div.) VEN (0.5V/div.) VOUT (0.2V/div.) VDD=3.3V VIN=1.2V RL=10Ω CL=4.7uF IOUT (50mA/div.) VDD=3.3V VIN=1.2V RL=10Ω CL=4.7uF VOUT (0.2V/div.) IOUT (50mA/div.) TIME (0.2ms/div.) Fig.29 Output turn-on response BD6528HFV VEN (0.5V/div.) TIME (0.2ms/div.) Fig.30 Output turn-off response BD6528HFV VEN (0.5V/div.) VOUT (0.2V/div.) VDD=3.3V VIN=1.2V RL=500Ω CL=4.7µF IOUT (10mA/div.) VDD=3.3V VIN=1.2V RL=500Ω CL=4.7µF VOUT (0.2V/div.) IOUT (10mA/div.) TIME (0.2ms/div.) TIME (0.2ms/div.) Fig.31 Output turn-on response BD6529GUL Fig.32 Output turn-off response BD6529GUL VEN (0.5V/div.) VEN (2V/div.) VEN (0.5V/div.) VDD=3.3V VIN=1.2V RL=10Ω CL=4.7µF VOUT (0.2V/div.) VDD=3.3V VIN=1.2V RL=10Ω CL=4.7µF VOUT (0.2V/div.) VIN=1.2V VDD=3.3V VOUT (1V/div.) CL=22µF CL=10uF IOUT (50mA/div.) IOUT (20mA/div.) IOUT (50mA/div.) TIME (0.2ms/div.) TIME (0.2ms/div.) Fig.33 Output turn-on response BD6529GUL Fig.34 Output turn-off response BD6529GUL www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/11 CL=4.7uF TIME (0.2ms/div.) Fig.35 Rush current response 2011.05 - Rev.C Technical Note BD6528HFV,BD6529GUL ●Block diagram VIN VOUT VDD B A VIN VDD 1 VOUT EN 2 VOUT GND 3 BD6529GUL (Bottom view) charge pump GND EN BD6528HFV (Top view) Fig.36 Block diagram Fig.37 Pin configuration ●Pin description Pin number Pin name 1 (A3) 2, 3 (B2, B3) 4 (B1) 5 (A1) 6 (A2) Pin function GND Ground VOUT Switch output (connect each pin externally) VIN VDD EN Switch input Power supply (for switch control and drive circuit) Enable input (Active-High Switch on input) ●I/O equivalent circuit Pin name Pin number Equivalent circuit VDD EN VIN VOUT 6 (A2) 4 (B1) 2, 3 (B2, B3) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. EN VIN VOUT 7/11 2011.05 - Rev.C Technical Note BD6528HFV,BD6529GUL ●Operation description 1. Switch operation Each VIN and VOUT pins are connected to MOSFET’s drain and source. By setting EN input to High level, the internal charge pump operates and turns on MOSFET. When MOSFET is turned on, the switch becomes bidirectional characteristics. Consequently, in case of VIN < VOUT, the current is flowing from VOUT to VIN. Since there is no parasitic diode between switch’s drain and source, it prevents the reverse current flow from VOUT to VIN during switch off stage. 2. Output discharge circuit Discharge circuit operates when switch is off. When discharge circuit operates, 70Ω (Typ.) resistor is connected between VOUT pin and GND pin. This discharges the electrical charge quickly. VDD VIN EN VOUT Discharge circuit ON OFF ON OFF ON Fig.38 Operation timing ●Application circuit example V IN V DD ON / OFF VIN VOUT VDD VOUT EN LOAD GND Fig.39 Application circuit example * This application circuit does not guarantee its operation. When the external circuit constant, etc. is changed, be sure to consider adequate margins; by taking into account external parts and/or IC’s dispersion including not only static characteristics, but also transient characteristics. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 8/11 2011.05 - Rev.C Technical Note BD6528HFV,BD6529GUL ●Power dissipation characteristics 900 POWER DISSIPATION : Pd [mW] 800 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 125 150 AMBIENT TEMPERATURE : Ta [ ℃] Fig.40 Power dissipation curve (Pd-Ta Curve) (HVSOF6 package) 700 POWER DISSIPATION : Pd [mW] 600 500 400 300 200 100 0 0 25 50 75 100 AMBIENT TEMPERATURE : Ta [ ℃] Fig.41 Power dissipation curve (Pd-Ta Curve) (VCSP50L1 package) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/11 2011.05 - Rev.C Technical Note BD6528HFV,BD6529GUL ●Notes foe use (1) Absolute Maximum Ratings An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break down devices, thus making impossible to identify breaking mode such as a short circuit or an open circuit. If any special mode exceeding the absolute maximum ratings is assumed, consideration should be given to take physical safety measures including the use of fuses, etc. (2) Power supply and GND line Design PCB pattern to provide low impedance for the wiring between the power supply and the GND lines. Pay attention to the interference by common impedance of layout pattern when there are plural power supplies and GND lines. Especially, when there are GND pattern for small signal and GND pattern for large current included the external circuits, separate each GND pattern. Furthermore, for all power supply terminals to ICs, mount a capacitor between the power supply and the GND terminal. At the same time, in order to use a capacitor, thoroughly check to be sure the characteristics of the capacitor to be used present no problem including the occurrence of capacity dropout at a low temperature, thus determining the constant. (3) GND voltage Make setting of the potential of the GND terminal so that it will be maintained at the minimum in any operating state. Furthermore, check to be sure no terminals are at a potential lower than the GND voltage including an actual electric transient. (4) Short circuit between terminals and erroneous mounting In order to mount ICs on a set PCB, pay thorough attention to the direction and offset of the ICs. Erroneous mounting can break down the ICs. Furthermore, if a short circuit occurs due to foreign matters entering between terminals or between the terminal and the power supply or the GND terminal, the ICs can break down. (5) Operation in strong electromagnetic field Be noted that using ICs in the strong electromagnetic field can malfunction them. (6) Input terminals In terms of the construction of IC, parasitic elements are inevitably formed in relation to potential. The operation of the parasitic element can cause interference with circuit operation, thus resulting in a malfunction and then breakdown of the input terminal. Therefore, pay thorough attention not to handle the input terminals, such as to apply to the input terminals a voltage lower than the GND respectively, so that any parasitic element will operate. Furthermore, do not apply a voltage to the input terminals when no power supply voltage is applied to the IC. In addition, even if the power supply voltage is applied, apply to the input terminals a voltage lower than the power supply voltage or within the guaranteed value of electrical characteristics. (7) External capacitor In order to use a ceramic capacitor as the external capacitor, determine the constant with consideration given to a degradation in the nominal capacitance due to DC bias and changes in the capacitance due to temperature, etc. (8) Thermal design Perform thermal design in which there are adequate margins by taking into account the power dissipation (PD) in actual states of use. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10/11 2011.05 - Rev.C Technical Note BD6528HFV,BD6529GUL ●Ordering part number B D 6 Part No. 5 2 8 Part No. 6528 6529 H F V - Package HFV: HVSOF6 GUL: VCSP50L1 T R Packaging and forming specification TR: Embossed tape and reel (HVSOF6) E2: Embossed tape and reel (VCSP50L1) HVSOF6 <Tape and Reel information> (1.5) (0.45) 6 5 4 Tape Embossed carrier tape Quantity 3000pcs Direction of feed TR The direction is the 1pin of product is at the upper right when you hold ( reel on the left hand and you pull out the tape on the right hand (0.15) (1.2) (1.4) 1 2 3 ) 1pin 0.145±0.05 0.75Max. 3.0±0.1 2.6±0.1 (MAX 2.8 include BURR) 1.6±0.1 (MAX 1.8 include BURR) S 0.1 S 0.22±0.05 Direction of feed 0.5 Reel (Unit : mm) ∗ Order quantity needs to be multiple of the minimum quantity. VCSP50L1(BD6529GUL) <Tape and Reel information> 1.50±0.05 Tape Embossed carrier tape (heat sealing method) Quantity 3000pcs Direction of feed 0.55MAX 0.10±0.05 1.00±0.05 1PIN MARK E2 The direction is the 1pin of product is at the upper left when you hold ( reel on the left hand and you pull out the tape on the right hand ) 0.08 S (φ0.15)INDEX POST 6-φ0.25±0.05 0.05 A B A 0.5 B B A 1 0.25±0.05 0.25±0.05 S 2 3 1pin P=0.5×2 (Unit : mm) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Reel 11/11 Direction of feed ∗ Order quantity needs to be multiple of the minimum quantity. 2011.05 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. 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