BFQ 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 7.5 GHz F = 1.3 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFQ 193 RCs 1=B Q62702-F1312 Package 2=C 3=E SOT-89 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 80 Base current IB 10 Total power dissipation Ptot TS ≤ 93 °C Values Unit V mA mW 600 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point Semiconductor Group 1) RthJS 1 ≤ 95 K/W Dec-13-1996 BFQ 193 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 12 100 nA - - 100 IEBO µA - - 1 hFE IC = 30 mA, VCE = 8 V Semiconductor Group - ICBO VEB = 1 V, IC = 0 DC current gain µA - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 20 V, VBE = 0 Collector-base cutoff current V 50 2 100 200 Dec-13-1996 BFQ 193 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 5.5 pF - 0.78 1.2 - 0.36 - - 2.1 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 7.5 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 10 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz - 1.3 - f = 1.8 GHz - 2.1 - f = 900 MHz - 14 - f = 1.8 GHz - 8 - f = 900 MHz - 11.5 - f = 1.8 GHz - 6 - Power gain 2) Gma IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 30 mA, VCE = 8 V, ZS =ZL= 50 Ω Semiconductor Group 3 Dec-13-1996 BFQ 193 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 700 mW 600 Ptot 550 500 TS 450 400 350 300 TA 250 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 2 RthJS 10 2 Ptotmax/PtotDC - K/W 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 4 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-13-1996