BFS 480 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA • fT = 7GHz F = 1.5dB at 900MHz • Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFS 480 SOT-363 REs Q62702-F1531 1/4 = B 2/5 = E 3/6 = C data below is of a single transistor Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 8 Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 2 Collector current IC 10 Base current IB 1.2 Total power dissipation Ptot TS ≤ 112 °C Values Unit V mA mW 80 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 470 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-16-1996 BFS 480 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 8 100 nA - - 100 IEBO µA - - 1 hFE IC = 3 mA, VCE = 5 V Semiconductor Group - ICBO VEB = 1 V, IC = 0 DC current gain µA - VCB = 8 V, IE = 0 Emitter-base cutoff current - ICES VCE = 10 V, VBE = 0 Collector-base cutoff current V 30 2 100 200 Dec-16-1996 BFS 480 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 6 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance 5 pF - 0.23 0.4 - 0.1 - - 0.23 - Cce VCE = 5 V, f = 1 MHz Emitter-base capacitance 7.5 Ccb VCB = 5 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 1.5 mA, VCE = 5 V, ZS = ZSopt f = 900 MHz - 1.5 - f = 1.8 GHz - 2 - f = 900 MHz - 18 - f = 1.8 GHz - 14 - f = 900 MHz - 14 - f = 1.8 GHz - 9.5 - Power gain 1) Gms IC = 3 mA, VCE = 5 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 3 mA, VCE = 5 V, ZS =ZL= 50 Ω 1) Gms = |S21/S12| Semiconductor Group 3 Dec-16-1996 BFS 480 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 100 mW Ptot 80 70 60 TS 50 TA 40 30 20 10 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 RthJS 10 2 P totmax/PtotDC - K/W 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 4 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-16-1996 BFS 480 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 0.40 10 pF GHz Ccb fT 0.30 10V 8 5V 7 3V 0.25 2V 6 0.20 5 0.15 1V 4 0.7V 0.10 3 0.05 0.00 0 2 1 2 4 6 8 V 12 0 2 4 6 8 VR Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter mA IC 12 15 22 dB dB 8V 2V G G 18 8V 13 3V 12 2V 11 16 1V 10 14 1V 9 0.7V 8 12 0.7V 7 10 6 8 5 0 2 Semiconductor Group 4 6 8 mA IC 12 0 5 2 4 6 8 mA IC 12 Dec-16-1996 BFS 480 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 20 22 IC=3mA 0.9GHz dB G 16 IP3 dBm 8V 5V 14 3V 0.9GHz 1.8GHz 14 2V 10 12 1V 6 1.8GHz 10 2 8 -2 6 -6 4 -10 2 0 -14 0 1 2 3 4 5 6 7 8 V 10 0 2 4 6 8 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 30 mA IC 11 20 IC=3mA IC=3mA dB dB 26 G G 24 16 22 14 20 18 12 16 10 14 12 8 10 8 6 0.0 8V 8V 1V 0.7V 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 GHz f 6 4 0.0 3.5 6 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Dec-16-1996