DISCRETE SEMICONDUCTORS DATA SHEET BGB110 Bluetooth radio module Objective specification 2000 Oct 03 Philips Semiconductors Objective specification Bluetooth radio module BGB110 FEATURES APPLICATIONS • Plug-and-play Bluetooth class II radio module, needs only external antenna and reference clock Bluetooth transceivers in: • Small dimensions (13.75 x 10.2 x 1.9 mm) • Laptop computers • Cellular phones • Fully compliant to Bluetooth radio specification v1.0 • Personal digital assitants • High sensitivity (typical −80 dBm) • Consumer applications. • Advanced AFC for improved reception quality • RSSI with high dynamic range • BlueRF unidirectional JTAG RXMODE 2 compatible • Simple interfacing to Philips VW2600X baseband controller family • Internal shielding for better EMI (Electro Magnetic Interference) immunity. • 13 MHz system clock output for baseband processor • 2.048 MHz clock output for PCM voice codecs. DESCRIPTION The control interface is compatible whith BlueRF unidirectional JTAG RXMODE 2. The connection to Philips Semiconductors VW2600X family of Bluetooth baseband processors is straightforward. Frequency selection is done internally by a conventional synthesizer. The synthesizer accepts a reference frequency of 13 MHz. This reference frequency should either be stabilised by an external crystal or be supplied by en external source. The 13 MHz clock signal is also made available as a system clock to the baseband processor. It can be switched off for power saving. In that case, a 3.2 kHz clock is provided for wake-up timing. A 1 MHz reference, derived from the 13 MHz system clock, is available externally to clock out the transmit data from the baseband processor. The BGB110 also provides a 2.048 MHz clock for PCM voice codecs The circuit is designed to operate from 3.0 V nominal supplies. Separate ground and supply connections are provided for reduced parasitic coupling between different stages of the circuit. There is a basic amount of RF supply decoupling incorporated into the circuit. The envelope is a leadless SOTtbdA package with a metal cap. The BGB110 TrueBlue Bluetooth radio module is a short-range radio transceiver for wireless links operating in the globally available ISM band, between 2402 and 2480 MHz. It is composed of a fully integrated, state-of-the-art near-zero-IF transceiver chip, an antenna filter for improved out-of-band blocking performance, a TX/RX switch, TX and RX baluns, the VCO resonator and a basic amount of supply decoupling. The device is a “Plug-and Play” module that needs no external components for proper operation. Robust design allows for untrimmed components, giving a cost-optimized solution. Demodulation is done in open-loop mode to reduce the effects of reference frequency breakthrough on reception quality. An advanced AFC circuit compensates for VCO drift and RF frequency errors during open-loop demodulation. The circuit is integrated on a ceramic substrate. It is connected to the main PCB through a LGA (Land Grid Array). A metal cap suppresses the effects of EMI (Electro Magnetic Interference). The RF port has a normalized 50 Ω impedance and can be connected directly to an external antenna, with a 50 Ω transmission line. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2000 Oct 03 2 Philips Semiconductors Objective specification Bluetooth radio module BGB110 PINNING PIN DESCRIPTION 1 VCO supply voltage 2 VCO tuning voltage (for test only) 3 analog part 2 supply voltage 4 transmit data stream input 5 synthesiser turn-on input signal 6 serial interface (JTAG) clock input 7 serial interface (JTAG) control mode select input 8 serial interface (JTAG) control data input 9 serial interface (JTAG) control data output 10 power-on reset output 11 digital part supply voltage 12 low-power clock output 13 packet switching on input signal 14 2.048 MHz clock output for PCM codecs 15 system clock request input 16 system clock output 17, 20, 25, 26, 27, 28, 29, 30, 31, 33, 34 18 Fig.1 Simplified outline ground transmit data clock output 19 receive data stream output 21 crystal oscillator output 22 crystal oscillator or external clock input 23 power-on reset input 24 analog part 1 supply voltage 32 antenna input/output 2000 Oct 03 bottom view 3 Philips Semiconductors Objective specification Bluetooth radio module BGB110 QUICK REFERENCE DATA VS = 3.0 V; Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER VS supply voltage IS (RX guard) supply current CONDITIONS IS (RX demod) supply current MIN. TYP. MAX. UNIT 2.8 3 3.6 V during RX guard space − 30 − mA during demodulation − 65 − mA IS (TX guard) supply current during TX guard space − 43 − mA IS (TX) supply current during transmission − 37 − mA IS (pd) supply current in power-down mode − 1 − mA Sens receiver sensitivity BER = 0.1 % under standard conditions − −80 −73 dBm Pout output power − 0 − dBm f0 RF frequency 2402 − 2480 MHz fref reference input frequency − 13 − MHz Tamb operating ambient temperature −10 − 50 °C BLOCK DIAGRAM R_DATA TX_DATA SYNT_ON VS_VCO VTUNE VCO tank PLL loop filter Interface adapter IC RF IC TX balun + filter Supply decoupling RX balun + filter Supply decoupling PX_ON SI_CLK SI_CMS SI_CDI SI_CDO POR_EXT POR SYS_CLK_REQ SYS_CLK LPO_CLK PCM_CLK TX_CLK XOP XON VS_ANA1 VS_DIG VS_ANA2 GND Fig.2 Block diagram. 2000 Oct 03 4 TX/RX switch Filter ANT Philips Semiconductors Objective specification Bluetooth radio module BGB110 FUNCTIONAL DESCRIPTION Control The BGB110 TrueBlue Bluetooth Radio Module is compatible with BlueRF unidirectional JTAG RXMODE 2. It can be controlled directly by a Philips VW2600X family baseband processor, via an 8-wire control interface. These 8 wires can be grouped into: • A four-wire serial JTAG interface for initialisation and general control of the radio module. The control signals are SI_CDI (control data input), SI_CMS (control mode select), SI_CLK (control clock) and SI_CDO (control data output). • Three asynchronous control input signals SYS_CLK_REQ, PX_ON and SYNT_ON. • One asynchronous reset input signal POR_EXT. These latter four wires control specific blocks inside the radio module. Furthermore, the BGB110 supplies the baseband processor with four clock signals: • A 13 MHz system clock SYS_CLK, which can be switched off in order to save power. • A 1 MHz transmit clock TX_CLK, for clocking out the data to be transmitted. • A 3.2 kHz low-power clock for wake-up timing in the baseband processor. • A 2.048 MHz clock for PCM voice codecs. JTAG interface The JTAG serial interface is used to control the BGB110. The BGB110 has to be the only slave on the JTAG bus, it does not allow for multi-slave operation. The JTAG interface protocol used is fully compliant with the standard set out in IEEE Std 1149.1-1990. The following features are supported: • 5-bit register address. • 8-bit data. • Set instruction register. • Read/write data register (note that some addresses denote separate read and write data registers). The JTAG interface allows for 2 ways of accessing a register. One is the communicate address and data, and the second one is for successive accesses to the same register where only the data is communicated. This can e.g. be used for updating the channel information before every packet. STATE DIAGRAM The state diagram is shown in Fig.3. Transitions from one state to another depend on the SI_CMS input at the rising edge of SI_CLK. The SI_CMS and SI_CDI should change value at the falling edge of SI_CLK. Output SI_CDO will also change at the falling edge of SI_CLK. An instruction register scan (IR-Scan) period starts with a status information download (Capture-IR). The status inputs to the instruction register are user-defined observability inputs. Afterwards, the data can be shifted out (Shift-IR), at the same time as serial data/instruction are shifted in, or directly updated to the parallel output (Exit1-IR, Update-IR). There is also a possibility for the IR-Scan period to be paused (Pause-IR) before a new data-shift. A data register scan period is identical but there are no restrictions on the data during Capture-DR. 2000 Oct 03 5 Philips Semiconductors Objective specification Bluetooth radio module BGB110 1 Control-LogicReset 0 Run Control / Idle 0 1 Select-DRScan 1 Select-IR-Scan 0 0 1 1 Capture-DR Capture-IR 0 0 Shift-DR 0 Shift-IR 1 Exit1-DR 0 1 1 Exit1-IR 0 Pause-DR 1 0 0 Pause-IR 1 0 1 0 1 0 Exit2-DR Exit2-IR 1 1 1 Update-DR Update-IR 0 1 0 Fig.3 State diagram for register programming using the JTAG serial interface REGISTER SCAN There are two types of register scans used for controlling the functionality: • IR (instruction register) scan is the normal read/write instruction. This instruction selects a specific register to write to or read from. • DR (data register) scan where 8 bits of data are shifted into the register. By choosing the register with an IR scan and performing a DR scan the data can be captured into the instruction registers. TIMING The serial interface is operational when there is a 13 MHz SYS_CLK and POR_EXT is ‘high’. All input signals (SI_CDI, SI_CMS) into the serial interface should change on the negative edge of the serial clock (SI_CLK). The serial interface samples the SI_CDI and SI_CMS signals on the positive edge of SI_CLK to eliminate setup and hold violations. The output signal (SI_CDO) should also change on the negative edge of SI_CLK. The input data always be in whole bytes. SI_CLK MIN. TYP. MAX. UNIT SI_CMS SI_CDI SI_CDO t2 t1 tSI_CLK 200 250 − ns tSI_CLK2 76 76 − ns t1 20 − − ns t2 − − 20 ns tSI_CLK2 tSI_CLK Fig.4 Timing diagram for the JTAG serial interface 2000 Oct 03 6 Philips Semiconductors Objective specification Bluetooth radio module BGB110 Registers The following registers are important for setting up a Bluetooth link with the BGB110. They are controlled over the serial interface. REGISTER S_EN_WIDTH ADDRESS RESET DESCRIPTION R/W 9 0xC8 S_EN width CHANNEL W 18 0x00 frequency channel number and TX/RX information RSSI R 18 0x00 RSSI XO_Trim W 19 0x80 trim value for system clock ID R 19 0xA1 device identification CONTROL R/W 22 0x00 system clock control ENABLE R/W 25 0x00 module control GFSK_TABLE R/W 28 0x00 GFSK filter lookup table values S_EN_WIDTH The S_EN_WIDTH register is used to control the amount of time that the RF frequency synthesizer has to switch from one frequency to the next, and to settle down. It defaults to 200 µs. S_EN_WIDTH b7 b6 b5 b4 9 Bits b7 -b0 b3 b2 b1 b0 b1 b0 S_EN_WIDTH S_EN_WIDTH S_EN_WIDTH (in µs) CHANNEL PROGRAMMING The serial interface channel programming word is converted to a synthesizer division ratio. CHANNEL b7 18 trx b6 b5 b4 b3 b2 channel number Bit b7 trx 0 = TX, 1 = RX Bits b6 - b0 channel number channel 0 is at 2402 MHz, channel 78 is at 2480 MHz. There is no need to program different values for RX and TX on the same channel RSSI The RSSI is read via the serial interface. The RSSI value can only be read from the serial interface register after the measurement has been completed, which is at the end of the packet. RSSI measurements are only done in receive packets. RSSI b7 b6 b5 b4 18 2000 Oct 03 b3 RSSI 7 b2 b1 b0 Philips Semiconductors Objective specification Bluetooth radio module BGB110 XO_TRIM The XO_Trim register is used to control the frequency of the 13 MHz oscillator, by controlling the capacitive load on the XIN and XOUT pins. XO_TRIM b7 19 not used b6 b5 b4 b3 b2 b1 b0 XO-trim Bit b7 not to be used Bit b6 add 6 pF to XIN and XOUT Bit b5 add 3 pF to XIN and XOUT Bit b4 add 1.5 pF to XIN and XOUT Bit b3 add 0.75 pF to XIN and XOUT Bit b2 add 0.375 pF to XIN and XOUT Bit b1 add 0.1875 pF to XIN and XOUT Bit b0 add 0.09375 pF to XIN and XOUT ID The ID register is used to identify the BGB110 set from the baseband. This is read only. ID b7 b6 b5 b4 19 Bits b7 -b0 b3 b2 b1 b0 b3 b2 b1 b0 ID ID radio chip set identification (value = 0xA1) CONTROL The CONTROL register is used to control SYS_CLK in the BGB110. CONTROL b7 b6 22 b5 b4 not used Rdy not used Bits b7 - b3 not used not to be used Bit b2 Rdy baseband ready, used to control the function of SYS_CLK_REQ Bits b1 - b30 not used not to be used ENABLE The ENABLE register is used to control functions inside the BGB110 ENABLE b7 b6 b5 b4 25 not used grst not used clk_en b3 b2 b1 not used Bit b7 not used not to be used Bit b6 grst GFSK table address reset. Writing ‘1’ will reset the GFSK table addressing. This bit needs to be reset to ‘0’ before writing to the GFSK table Bit b5 not used not to be used Bit b4 clk_en enables the 2.048 MHz clock on PCM_CLK, ‘0’ = clock diable, ‘1’ = clock enable Bits b3 - b0 not used not to be used 2000 Oct 03 8 b0 Philips Semiconductors Objective specification Bluetooth radio module BGB110 GFSK_TABLE The GFSK_TABLE register defines the Gaussian filtering of the datastream to be transmitted. It consists of 13 registers, the contents of which define the shape of the Gaussian-filtered modulating signal. There is an auto-increment facility, so that subsequent writes to this register result in subsequent shape values being written. Setting the ‘grst’ bit in the ENABLE register to ‘1’ resets the auto-increment counter. It should be reset to ‘0’ before loading the shape values. The values into this table depend on the supply voltage. Below is given an example table that can be used for a 3.0 V supply voltage. If there is a different supply voltage, these values should be scaled accordingly. GFSK_TABLE b7 b6 b5 b4 28 b3 b2 b1 b0 GFSK_TABLE Bits b7 -b0 GFSK_TABLE Shape value # Value 0 0x3B 1 0x3C 2 0x3E 3 0x42 4 0x4A 5 0x57 6 0x66 7 0x75 8 0x82 9 0x8A 10 0x8E 11 0x90 12 0x91 Gaussian filter shape value Reset The BGB110 has an internal power-on reset function, which is operational every time the supply voltage is switched on. This will reset all internal registers and will bring the device into a known state. Next to the built-in power-on reset, there is the POR_EXT reset signal. This will also reset the device and put it into the same state as the power-on reset. The POR_EXT signal is intended to be used as a reset from a host processor. Following the power-on reset or a POR_EXT reset, the system oscillator is started and the SYS_CLK output is activated (enabled). The SYS_CLK can be controlled by the SYS_CLK_REQ signal. It will only control the SYS_CLK once the Rdy bit in the CONTROL register has been set. The function of the SYS_CLK _REQ has two phases: 1. After reset, the SYS_CLK_REQ is not taken into account for generation of SYS_CLK. The 13 MHz system clock is enabled on SYS_CLK. 2. Once register CONTROL Rdy is set to ‘1’, the 13 MHz system clock on the SYS_CLK is controlled by SYS_CLK_REQ. SYS_CLK_REQ does not control the oscillator itself. The oscillator will not be disabled by the SYS_CLK_REQ signal. LPO_CLK output is only controlled by the POR_EXT which also controls the POR output. POR is activated 4 SYS_CLK cycles after POR_EXT. 2000 Oct 03 9 Philips Semiconductors Objective specification Bluetooth radio module BGB110 VS_DIG OSC SYS_CLK_REQ SYS_CLK POR_EXT POR LPO_CLK Phase 1 Rdy = 0 Phase 2 Rdy = 1 Fig.5 Reset timing Transmit mode The BGB110 TrueBlue Bluetooth radio module contains a fully integrated transmitter function. The RF channel frequency is selected in a conventional synthesizer, which is controlled via the serial JTAG interface. After the RF frequency has settled, the power amplifier is switched on and the modulation input is preset to its mean value. The RF frequency is allowed to resettle, to overcome possible frequency pulling effects, and the synthesizer loop is opened. The data stream present on the TX_DATA line is Gaussian filtered and converted to an analog signal which then directly modulates the VCO. The robust design of the VCO makes it unnecessary to trim its freerunning frequency. This leads to a lower component cost. A carefully designed PLL loop filter keeps frequency drift during open-loop modulation down to a very low value. The output stage of the transmit chain active part is balanced, for reduced spurious emissions (EMC). It is connected through a balun (balanced-to-unbalanced) circuit to the TX/RX switch. This switch is controlled by internal logic circuits in the active die. The balun circuit has built-in selectivity, to further reduce out-of-band spurious emissions. Receive mode Also the receiver functionality is fully integrated. It is a near-zero-IF (1 MHz) architecture with active image rejection. The sensitive RX input of the active die is a balanced configuration, in order to reduce unwanted (spurious) responses. The balun structure to convert from unbalanced to balanced signals has built-in selectivity. This suppresses GSM-900 frequencies by more than 40 dB. For better immunity to DCS, DECT, GSM-1800 and W-CDMA signals, an extra band-pass filter has been included. The synthesizer PLL is switched off during demodulation. This reduces the effects that reference frequency breakthrough may have on receiver sensitivity, and also reduces the power consumption. The demodulator contains an advanced AFC circuit. This reduces the effects of frequency mismatch between (remote) transmitter and receiver. These may be caused by differences in reference frequency, but also by frequency drift during open-loop modulation and demodulation. The demodulated RF signal is sampled and compared against a reference (slicer) value and then output on the RX_DATA line. An RSSI output with a high dynamic range of nearly 50 dB provides information on the quality of the signal received. The RSSI value is read out via the JTAG interface, as described above. 2000 Oct 03 10 Philips Semiconductors Objective specification Bluetooth radio module BGB110 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VS supply voltage −0.3 3.6 V Vctrl control pin voltage −0.3 VS V ∆GND difference in ground supply voltage between ground pins − 0.01 V Ptot total power dissipation − tbd W PD drive power at receiver input − 0 dBm Tstg storage temperature −55 +125 °C Tamb ambient temperature −10 +50 °C Tj junction temperature − 150 °C note 1 Notes 1. Pins short-circuited internally must be short-circuited externally. THERMAL CHARACTERISTICS SYMBOL Rth j-a 2000 Oct 03 PARAMETER thermal resistance from junction to ambient 11 VALUE UNIT tbd K/W Philips Semiconductors Objective specification Bluetooth radio module BGB110 CHARACTERISTICS VCC = 3.0 V;Tamb = 25 °C; fdev = 160 kHz; unless otherwise specified. Characteristics for which only a typical value is given are not tested. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VS supply voltage 2.8 3.0 3.6 V IS(GUARD-RX) total supply current during RX guard space − 30 tbd mA IS(RX) total supply current during RX (PLL off) − 65 tbd mA IS(GUARD-TX) total supply current during TX guard space − 43 tbd mA IS(TX) total supply current during TX (PLL off) − 37 tbd mA IS(pd) total supply current power-down mode − 1 tbd mA Frequency selection fref reference input frequency ∆fref reference frequency inaccuracy Vref(min) sinusoidal input signal level RMS value tbd − tbd mV Rin input resistance (real part of the input impedance) at 13 MHz; XON, XOP pins − tbd − kΩ Cin input capacitance at 13 MHz; XON, XOP pins − tbd − pF fVCO oscillator frequency over full temperature and supply range; note 1 1201 − 1240 MHz CNR500kHz carrier to noise ratio offset from carrier 500 kHz 89 105 − dBcHz offset from carrier 2500 kHz 120 tbd − dBcHz over 1 TX slot −25 0 25 kHz over 3, 5 TX slots (DM3, DH3, DM5, DH5 packets) −40 0 40 kHz across entire band − 150 200 µs CNR2500kHz ∆f1 slot carrier drift ∆f3, 5 slots tPLL PLL settling time 13 tbd − MHz tbd ppm TX performance fRF RF frequency over full temperature and supply range 2402 − 2480 MHz ∆f VCO frequency deviation “0” bit −175 −160 −140 kHz “1” bit 140 160 175 kHz Po output power wanted channel −6 0 4 dBm Po 1 MHz adjacent channel output power at 1 MHz offset; measured in 100 kHz bandwidth; referred to wanted channel − − −20 dBc VSWR voltage standing wave ratio normalized to Zo = 50 Ω − tbd tbd H1, VCO VCO frequency feedtrough referred to wanted output level; fRF = 2450 MHz; fVCO = 1225 MHz − tbd tbd dBc − tbd tbd dBc − tbd tbd dBc − tbd tbd dBc VCO 3rd harmonic H4, VCO VCO 4th harmonic H6, VCO VCO 6th harmonic H3, VCO 2000 Oct 03 12 Philips Semiconductors Objective specification Bluetooth radio module SYMBOL PARAMETER out of band spurious emissions BGB110 CONDITIONS 30 MHz to 1 GHz MIN. − TYP. tbd MAX. −36 UNIT dBm 1 GHz to 12.75 GHz − tbd −30 dBm 1.8 GHz to 1.9 GHz − tbd −47 dBm 5.15 GHz to 5.3 GHz − tbd −47 dBm Receiver performance SENS sensitivity BER = 0.1 % − −80 −73 dBm Pi max maximum input power in one channel BER < 0.1 % −20 tbd − dBm VSWR voltage standing wave ratio normalized to Zo = 50 Ω − tbd tbd fRF RF input frequency over full temperature and supply range 2402 − 2480 MHz RSSI RSSI range −86 − −36 dBm resRSSI RSSI resolution − 8 − bits RSSI linearity error −0.5 − 0.5 lsb IM3 intermodulation rejection wanted signal −64 dBm; Interferers 5 and 10 channels away; BER < 0.1 % 28 tbd − dBc RCO co-channel rejection wanted signal −60dBm; BER < 0.1 % -11 -10 − dBc RC/I 1MHz adjacent channel rejection (± 1 MHz) wanted signal −60dBm; BER < 0.1 % 0 3 − dBc RC/I 2MHz bi-adjacent channel rejection (N-2) wanted signal −60dBm; BER < 0.1 % 30 tbd − dBc RC/I Image rejection at image frequency (N+2) wanted signal −67dBm; BER < 0.1 % 9 11 − dBc RC/I Image rejection at image-adjacent frequency (N+3) wanted signal −67dBm; BER < 0.1 % 20 27 − dBc 1MHz RC/I ≥3MHz image adjacent channel rejection wanted signal −67dBm; BER < 0.1 %; N+3 is a special case, see above 40 tbd − dBc out of band blocking wanted signal −67dBm; CW interferer level range 30 MHz to 2 GHz −10 − − dBm range 2 GHz to 2400 MHz −27 − − dBm range 2500 MHz to 3 GHz −27 − − dBm range 3 GHz to 12.75 GHz −10 − − dBm wanted signal −67dBm; GSM tbd modulated signal between 880 and 915 MHz (GSM−900 uplink) tbd − dBm wanted signal −67dBm; GSM modulated signal between 1800 and 1785 MHz (GSM−1800 uplink) tbd − dBm 2000 Oct 03 13 tbd Philips Semiconductors Objective specification Bluetooth radio module SYMBOL PARAMETER spourious emissions FTLOrf BGB110 LO to RF feedthrough CONDITIONS 30 MHz to 1 GHz MIN. − TYP. MAX. UNIT tbd tbd dBc 1 GHz to 12.75 GHz − tbd tbd dBc measured at 2450MHz − tbd -47 dBc Interface (logic) inputs and outputs VIH HIGH-level input voltage 2.1 − VS V VIL LOW-level input voltage −0.5 − 0.9 V VOH HIGH-level output voltage 2.4 − − V VOL LOW-level output voltage − − 0.5 V Ibias input bias current −10 − 10 µA fJTAG JTAG interface frequency 1 − 5 MHz fSYS system clock frequency − 13 − MHz fLPO low-power clock frequency − 3.2 − kHz HIGH or LOW level Notes 1. The VCO frequency is one-half the RF frequency. 2000 Oct 03 14 Philips Semiconductors Objective specification Bluetooth radio module BGB110 SOLDERING The indicated temperatures are those at the solder interfaces. MGM159 300 handbook, halfpage Advised solder types are types with a liquidus less than or equal to 210 °C. T (°C) Solder dots or solder prints must be large enough to wet the contact areas. 200 Soldering can be carried out using a conveyor oven, a hot air oven, an infrared oven or a combination of these ovens. A double reflow process is permitted. 100 Hand soldering is not recommended because the soldering iron tip can exceed the maximum permitted temperature of 250 °C and damage the module. In case handsoldering is needed, recommendations can be found in RNR-45-98-A-0485. 0 0 The maximum allowed temperature is 250 °C for a maximum of 5 seconds. The maximum ramp-up is 10 °C per second. 1 2 3 4 t (min) 5 Fig.7 Recommended reflow temperature profile. The maximum cool-down is 5 °C per second. Cleaning Packing The following fluids may be used for cleaning: An extended packing / SMD specification can be found in document RNR-T49D-2183. • Alcohol • Bio-Act (Terpene Hydrocarbon) • Acetone. Ultrasonic cleaning should not be used since this can cause serious damage to the product. 2000 Oct 03 15 Philips Semiconductors Objective specification Bluetooth radio module BGB110 DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2000 Oct 03 16 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. 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Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260, Tel. +66 2 361 7910, Fax. +66 2 398 3447 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 3341 299, Fax.+381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com SCA 70 © Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands budgetnum/ed/pp17 Date of release: 2000 Oct 03 Document order number: 9397 nnn nnnnn