UNISONIC TECHNOLOGIES CO., LTD 10NN15 Preliminary Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION SOP-8 The UTC 10NN15 is a Dual N-channel enhancement mode power MOSFET using UTC’s perfect technology to provide customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES * High switching speed * Low Gate Charge * Simple Drive Requirement SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10NN15L-S08-R 10NN15G-S08-R Note: Pin Assignment: G: Gate D: Drain Package SOP-8 S: Source www.unisonic.com.tw Copyright © 2011Unisonic Technologies Co., Ltd 1 S1 Pin Assignment 2 3 4 5, 6 7, 8 G1 S2 G2 D2 D1 Packing Tape Reel 1 of 4 QW-R502-565.b 10NN15 Preliminary Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R502-565.b 10NN15 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 150 V Gate-Source Voltage VGSS ±20 V Continuous (Note 3) ID 3 A Drain Current 12 A Pulsed (Note 2) IDM Power Dissipation PD 2 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by Max. junction temperature. 3. Surface mounted on 1in2 copper pad of FR4 board, t≤10sec; 135°C/W when mounted on Min. copper pad. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient (Note 3) SYMBOL θJA RATINGS 62.5 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=150V, VGS=0V Forward VGS=+20V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=120V, ID=3A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDS=75V, VGS=10V, ID=3A, RG=3.3Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=3A, VGS=0V Body Diode Reverse Recovery Time tRR IS=3A, VGS=0V, dIF/dt=100A/µs Body Diode Reverse Recovery Charge QRR Note: 1. Pulse width ≤ 300µs, duty cycle ≤ 2% . 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 150 V 10 µA +100 nA -100 nA 2 4 400 V mΩ 420 60 40 672 pF pF pF 10 2 4 6.5 7 14 35 16 nC nC nC ns ns ns ns 1.3 V ns µC 40 75 3 of 4 QW-R502-565.b 10NN15 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-565.b