NCP3712ASNT1 Over Voltage Protected High Side Switch This switch is primarily intended to protect loads from transients by isolating the load from the transient energy rather than absorbing it. Features http://onsemi.com • Capable of Switching Loads of up to 200 mA without External • • • • • • • • Rboost Switch Shuts Off in Response to an Over Voltage Input Transient Features Active Turn Off for Fast Input Transient Protection Flexible Over Voltage Protection Threshold Set with External Zener Automatic Recovery after Transient Decays Below Threshold Withstands Input Transients up to 105 V Peak Guaranteed Off State with Enbl Input ESD Resistant in Accordance with the 2000 V Human Body Model Extremely Low Saturation Voltage MARKING DIAGRAM 1 High Voltage Transient Isolation Power Switching to Electronic Modules DC Power Distribution in Line Operated Equipment Buffering Sensitive Circuits from Poorly Regulated Power Supplies Pre–conditioning of Voltage Regulator Input Voltage BAGYW BAG = Specific Device Code Y = Year W = Work Week Applications Include: • • • • • TSOP–6 (SOT23–6, SC59–6) CASE 318G 6 INTERNAL CIRCUIT DIAGRAM/ PIN CONFIGURATION Vin Vout Q2 (5) (6) R2 R4 Q1 Rboost N.C. (3) (2) Vin Vout R1 R3 Rboost NCP3712ASNT1 + VZ (4) Ropt or 1 k (min) P. S. – (1) Enbl ORDERING INFORMATION L O A D Enbl VZ Device NCP3712ASNT1 Package Shipping TSOP–6 3000 Units (SOT23–6, SC59–6) on 7” Reel SW Figure 1. Typical Application Circuit Semiconductor Components Industries, LLC, 2001 September, 2001 – Rev. 2 1 Publication Order Number: NCP3712ASNT1/D NCP3712ASNT1 MAXIMUM RATINGS* (TJ = 25°C unless otherwise noted) (Note 1) Symbol Value Unit Vio 105 V Reverse Input–to–Vz. Voltage Vin(rev) –9.0 V Reverse Input–to–Rboost Voltage Vin(rev) –5.0 V Output Load Current – Continuous Iload –300 mA Enbl Input Current – Continuous Ienbl 5.0 mA Rating Input–to–Output Voltage Vz Input Current – Continuous Iz 3.0 mA Iboost 10 mA Junction Temperature TJ 125 °C Operating Ambient Temperature Range TA –40 to +85 °C Storage Temperature Range Tstg –65 to +150 °C Device Power Dissipation (Minimum Footprint) PD 300 mW – 2.4 mW/°C Rboost Input Current – Continuous Derate Above 25°C Latch–up Performance: ILatch–up Positive Negative mA 200 200 *Maximum Ratings are those values beyond which damage to the device may occur. 1. This device contains ESD protection and exceeds the following tests: Human Body Model 1500 V per MIL–STD–883, Method 3015. Machine Model Method 150 V. http://onsemi.com 2 NCP3712ASNT1 ELECTRICAL CHARACTERISTICS (Vin = 12.5 VDC Ref to Gnd, TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit V(BRio) 105 – – Vdc V(–BRout) – –0.7 – Vdc – – –100 Venbl(off) 13 – – Vdc Required “Off” State Iz Current (Rload = 100 ) Iz(off) 150 – – µAdc Vin(off) (Vz = 16 V, Iload = 100 mA, Renbl = 1500 ) Voff 15.5 – 18.7 – 0.2 0.5 – – – – – – –200 –200 –300 8.5 – 10.5 – – –1.0 Symbol Min Typ Max tPHL tPLH – – 1.5 1.5 – – tf tr – – 75 400 – – Input Leakage Resistor R2 7.0 10 13 k Input Resistor R1 3.3 4.7 6.1 k Output Leakage Resistor R4 1.4 2.4 3.2 k Enable Input Resistor R3 1.4 2.4 3.2 k OFF CHARACTERISTICS Input–Output Breakdown Voltage (@ Iout = 200 µA) Output Reverse Breakdown Voltage (@ Iout = –1.0 mA Pulse) Output Leakage Current (Vin = Venbl = 30 V, TA = 25°C) Guaranteed “Off” State “ENBL NOT” Voltage µAdc Iload(off) (IO ≤ 100 µA) Vdc ON CHARACTERISTICS Input–Output On Voltage (Io = 100 mA, Ienbl = –3.0 mA) Vio(on) Output Load Current Continuous (Ienbl = –3.0 mA, Vio(on) = 0.5 Vdc) (Iboost = –9.0 mA, Vio(on) = 0.5 Vdc) (Iboost = –9.0 mA, Vio(on) = 0.6 Vdc) Io(on) Vin(on) (Vz = 16 V, Iload = 100 mA, Renbl = 1500 ) Von “ENBL NOT” Input Current (Io = 100 mA, Vio(on) = 0.35 Vdc, Renbl = 1500 ) Ienbl Vdc mAdc Vdc mAdc SWITCHING CHARACTERISTICS Characteristic Units µS Propagation Delay Time: Hi to Lo Prop Delay; Fig. 3 (Vin = Venbl = 13.5 V) Lo to Hi Prop Delay; Fig. 3 (Vin = 13.5 V, Venbl = 0 V) S Transition Times: Fall Time; Fig. 4 (Vin = Venbl = 13.5 V) Rise Time; Fig. 4 (Vin = Venbl = 0 V) INTERNAL RESISTORS http://onsemi.com 3 NCP3712ASNT1 KEY A+ FB* 1N4004 0.01 F TYP Vout Enbl 0.027 F TYP 1 Ienbl N.C. 18 V TYP R opt 2 Rboost Iboost FB* NCP3712 ASNT1 6 Vin Iload Renbl 5 VZ 4 3 0–500 Rload 1.0 k TYP IZ A– *FB = MMZ2012 Y601B Figure 2. Typical Applications Circuit for Load Dump Transient Protection 120 13.5 V SUPPLY RAIL “ENABLE NOT” INPUT 10 50% AMPLITUDE LOAD DEPENDENT EXP DECAY tpLH TYPICAL INPUT TRANSIENT 100 DEVICE OUTPUT VOLTAGE AMPLITUDE (V) AMPLITUDE (V) 15 5 80 60 13.5 V SUPPLY RAIL 40 Voff 20 0 LOAD DEPENDENT OUTPUT EXP DECAY Von 0 0 5 10 15 20 25 30 35 40 45 50 0 50 100 150 200 250 300 TIME (s) TIME (s) Figure 3. Enable NOT Switching Waveforms Figure 4. Load Dump Waveforms http://onsemi.com 4 350 NCP3712ASNT1 INFORMATION FOR USING THE TSOP–6 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.094 2.4 0.037 0.95 0.074 1.9 0.037 0.95 0.028 0.7 0.039 1.0 inches mm TSOP–6 (SOT23–6, SC59–6) TSOP–6 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the TSOP–6 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the TSOP–6 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 950 milliwatts. PD = 150°C – 25°C 132°C/W = 950 milliwatts The 132°C/W for the TSOP–6 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 950 milliwatts. There are other alternatives to achieving higher power dissipation from the TSOP–6 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. * * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 5 NCP3712ASNT1 PACKAGE DIMENSIONS TSOP–6 CASE 318G–02 ISSUE H A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L 6 S 1 5 4 2 3 B D G M J C 0.05 (0.002) H K http://onsemi.com 6 DIM A B C D G H J K L M S MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0 10 2.50 3.00 INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0 10 0.0985 0.1181 NCP3712ASNT1 Notes http://onsemi.com 7 NCP3712ASNT1 Thermal Clad is a registered trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800–282–9855 Toll Free USA/Canada http://onsemi.com 8 NCP3712ASNT1/D