Bulletin I25168 rev. C 04/00 ST380C..C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features 960A Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB (E-PUK) Low profile hockey-puk to increase current-carrying capability Typical Applications DC motor controls Controlled DC power supplies AC controllers case style TO-200AB (E-PUK) Major Ratings and Characteristics Parameters ST380C..C Units 960 A 55 °C 1900 A 25 °C @ 50Hz 15000 A @ 60Hz 15700 A @ 50Hz 1130 KA2s @ 60Hz 1030 KA2s 400 to 600 V 100 µs - 40 to 125 °C IT(AV) @ Ths IT(RMS) @ Ths ITSM I 2t V DRM/V RRM tq typical TJ www.irf.com 1 ST380C..C Series Bulletin I25168 rev. C 04/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code V DRM/V RRM, max. repetitive peak and off-state voltage V VRSM , maximum nonrepetitive peak voltage V 04 400 500 06 600 700 I DRM /I RRM max. @ TJ = TJ max mA ST380C..C 50 On-state Conduction Parameter I T(AV) Max. average on-state current @ Heatsink temperature ST380C..C Units Conditions 960 (440) A 180° conduction, half sine wave 55 (75) °C double side (single side) cooled I T(RMS) Max. RMS on-state current 1900 I TSM Max. peak, one-cycle 15000 non-repetitive surge current 15700 DC @ 25°C heatsink temperature double side cooled t = 10ms A 12600 I 2t Maximum I2t for fusing V T(TO) 1 Low level value of threshold t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial TJ = TJ max. 1030 t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied 11300 KA2s voltage r t1 Low level value of on-state High level value of on-state t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. V (I > π x IT(AV)),TJ = TJ max. 0.88 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.25 slope resistance r t2 KA2√s 0.85 voltage V T(TO) 2 High level value of threshold 100% VRRM 1130 725 Maximum I2√t for fusing reapplied t = 10ms 13200 800 I 2√ t No voltage t = 8.3ms mΩ (I > π x IT(AV)),TJ = TJ max. 0.24 slope resistance V TM Max. on-state voltage 1.60 IH Maximum holding current 600 IL Typical latching current 1000 V I = 3000A, TJ = TJ max, t = 10ms sine pulse mA T J = 25° C, anode supply 12V resistive load pk p Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t d Typical delay time ST380C..C 1000 Units Conditions A/µs 2 Typical turn-off time 100 r TJ = T J max, anode voltage ≤ 80% VDRM Gate current 1A, di /dt = 1A/µs g 1.0 µs tq Gate drive 20V, 20Ω, t ≤ 1µs V = 0.67% VDRM, TJ = 25°C d ITM = 550A, TJ = T J max, di/dt = 40A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs p www.irf.com ST380C..C Series Bulletin I25168 rev. C 04/00 Blocking Parameter ST380C..C Units Conditions dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs T J = TJ max. linear to 80% rated V DRM IRRM IDRM Max. peak reverse and off-state leakage current 50 mA TJ = TJ max, rated VDRM /V RRM applied Triggering Parameter PGM ST380C..C Maximum peak gate power 10.0 PG(AV) Maximum average gate power IGM Max. peak positive gate current +VGM Maximum peak positive 3.0 Maximum peak negative VGT to trigger IGD VGD A T J = TJ max, t ≤ 5ms V TJ = TJ max, tp ≤ 5ms - 100 200 50 - 2.5 - 1.8 3.0 1.1 - DC gate current not to trigger DC gate voltage not to trigger p MAX. 200 T J = - 40°C DC gate current required DC gate voltage required p 5.0 TYP. to trigger T J = TJ max, t ≤ 5ms T J = TJ max, f = 50Hz, d% = 50 20 gate voltage IGT W 2.0 gate voltage -VGM Units Conditions 10 0.25 mA T J = 25°C T J = 125°C T J = - 40°C V Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied T J = 25°C T J = 125°C mA V TJ = TJ max Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Thermal and Mechanical Specification Parameter ST380C..C TJ Max. operating temperature range -40 to 125 T Max. storage temperature range -40 to 150 stg RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F wt Mounting force, ± 10% Approximate weight Case style www.irf.com Units °C 0.09 0.04 0.02 Conditions DC operation single side cooled K/W K/W 0.01 DC operation double side cooled DC operation single side cooled DC operation double side cooled 9800 N (1000) (Kg) 83 g TO - 200AB (E-PUK) See Outline Table 3 ST380C..C Series Bulletin I25168 rev. C 04/00 ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Single Side Double Side Single Side Double Side 180° 0.010 0.011 0.007 0.007 120° 0.012 0.012 0.012 0.013 90° 0.015 0.015 0.016 0.017 60° 0.022 0.022 0.023 0.023 30° 0.036 0.036 0.036 0.037 Units Conditions TJ = TJ max. K/W Ordering Information Table Device Code ST 38 0 C 06 C 1 1 2 3 4 5 6 7 1 - Thyristor 2 - Essential part number 8 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (E-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/µsec (Standard selection) L 4 = 1000V/µsec (Special selection) www.irf.com ST380C..C Series Bulletin I25168 rev. C 04/00 Outline Table ANODE TO GATE CREEPAGE DISTANCE: 11.18 (0.44) MIN. STRIKE DISTANCE: 7.62 (0.30) MIN. 25.3 (0.99) 0.3 (0.01) MIN. DIA. MAX. 14.1 / 15.1 (0.56 / 0.59) 0.3 (0.01) MIN. 25.3 (0.99) GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE DIA. MAX. 40.5 (1.59) DIA. MAX. 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19) Case Style TO-200AB (E-PUK) 25°± 5° All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 42 (1.65) MAX. 130 ST380C..C Series (Single Side Cooled) R th J-hs (DC) = 0.09 K/W 120 110 100 90 Co n duc tion An gle 80 30° 70 60° 90° 60 120° 50 180° 40 0 100 200 300 400 500 600 700 Average On -state Curren t (A) Fig. 1 - Current Ratings Characteristics www.irf.com M a x im u m A llo w a b le H e a tsin k T e m p e ra tu r e ( °C ) M axim um Allowable Heatsin k Tem perature (°C) 28 (1.10) 1 30 ST 3 8 0 C ..C Se rie s (Sin g le S id e C o o le d ) R t hJ-hs(D C ) = 0 .0 9 K / W 1 20 1 10 1 00 90 C o ndu c tio n Pe rio d 80 70 60 30 ° 50 60° 40 30 90° 120° 180° 20 0 20 0 4 00 60 0 8 00 DC 1 00 0 1 20 0 A v e ra ge O n - sta t e C u rre n t (A ) Fig. 2 - Current Ratings Characteristics 5 ST380C..C Series 1 30 M a x im u m A llo w a b le H e at sin k T e m p e ra t u re (°C ) M ax im u m A llo w a b le H e a ts in k T e m pe r a tu re (°C ) Bulletin I25168 rev. C 04/00 ST 3 8 0 C ..C S e rie s (D o u b le Sid e C o o le d ) R thJ-h s(D C ) = 0 .0 4 K / W 1 20 1 10 1 00 90 C o ndu ctio n A ng le 80 70 60 3 0° 50 6 0° 90° 40 120° 180 ° 30 20 0 20 0 4 00 600 80 0 10 0 0 1 2 00 1 4 00 1 30 ST 3 8 0 C ..C Se rie s (D o u b le Sid e C o o le d ) R th J-hs(D C ) = 0 .0 4 K / W 1 20 1 10 1 00 90 C on duc tio n Pe rio d 80 70 60 30° 60° 50 90° 40 12 0° 1 80° 30 DC 20 0 400 A v e ra g e O n -st a t e C u rre n t (A ) 2000 180° 120° 90° 60° 30° 1600 1400 RM S Limit 1200 1000 800 C o nduc tio n A ng le 600 ST 380C..C Series T J = 125°C 400 200 0 0 200 400 600 2 00 0 1 60 0 R M S Lim it 1 20 0 Co n du ction Pe rio d 800 S T 3 8 0 C ..C Se rie s TJ = 125° C 400 0 0 800 1000 1200 1400 400 1 0 00 0 90 0 0 80 0 0 S T 3 8 0 C ..C Se rie s 60 0 0 1 6 10 1 20 0 1 6 00 2 00 0 Fig. 6- On-state Power Loss Characteristics 1 00 P e a k H a lf Sin e W a v e O n -st a te C u rre n t (A ) P e a k Ha lf Sin e W a v e O n -sta t e C u rre n t (A ) 1 1 00 0 70 0 0 80 0 A v e ra g e O n -st a t e C u rre n t (A ) A t A n y R a t e d Lo a d C o n d itio n A n d W it h Ra t e d V R RM A p p lie d F o llo w in g Su rg e . Initial T J = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1 2 00 0 2 00 0 DC 180° 120° 90° 60° 30° 2 40 0 Average O n-sta te Current (A) 1 3 00 0 1 6 00 2 80 0 Fig. 5- On-state Power Loss Characteristics 1 4 00 0 1 20 0 Fig. 4 - Current Ratings Characteristics M a x im um A v e ra g e O n -st a te P o w e r L os s (W ) Maximu m Average On -state Power Loss (W) Fig. 3 - Current Ratings Characteristics 1800 80 0 A v e r a ge O n - st a t e C u rre n t (A ) 15000 M a xim u m N o n R e p e tit iv e Su rg e C u rre n t V e rsu s P u lse T ra in D u ra t io n . C o n t ro l O f C o n d uc t io n M a y N o t B e M a in t a in e d . In it ia l TJ = 1 2 5 ° C 13000 N o V o lt a g e R e a p p lie d 12000 R a t e d V RRM R e a p p lie d 14000 11000 10000 9000 8000 7000 ST 3 8 0 C ..C S e rie s 6000 0.01 0.1 1 N um b e r O f E qua l Am p litude H alf C yc le C urre n t Pulse s (N ) P u lse T ra in D u ra t io n (s) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled www.irf.com ST380C..C Series Bulletin I25168 rev. C 04/00 In st a n ta n e o u s O n -st a te C u rre n t ( A ) 1 0 0 00 TJ = 2 5 ° C T J = 1 2 5 °C 1 0 00 S T3 8 0 C ..C S e rie s 10 0 0. 5 1 1 .5 2 2 .5 3 3 .5 In st a n t a n e o u s O n - sta t e V o lt a g e ( V ) T ran sie n t T h e rm a l I m p e d an c e Z thJ-hs ( K/ W ) Fig. 9 - On-state Voltage Drop Characteristics 0 .1 S T 3 8 0 C ..C Se rie s St e a d y St a t e V a lu e 0 .0 1 R thJ-hs = 0 .0 9 K / W ( Sin gle Sid e C o o le d ) R thJ-hs = 0 .0 4 K / W ( D o u b le S id e C o o le d ) ( D C O p e ra tio n ) 0. 00 1 0 .0 0 1 0 .0 1 0 .1 1 10 Sq u a re W a v e P u lse D u rat io n ( s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 100 In st an t a n e o u s G a t e V o lt ag e ( V ) R e c ta n gu la r g a te p u lse a ) R e c o m m e n d e d lo a d lin e fo r ra t e d d i/ d t : 2 0 V , 1 0 o h m s; tr< = 1 µs b ) Re c o m m e n d e d lo a d lin e fo r < = 3 0 % ra t e d di/ d t : 1 0 V , 1 0 o h m s 10 tr< = 1 µ s (1) (2) (3) (4) PG M PG M PG M PG M = = = = 1 0W , 2 0W , 4 0W , 6 0W , tp tp tp tp = = = = 4m s 2m s 1m s 0 .6 6 m s ( a) (b ) Tj=-40 °C Tj=2 5 °C Tj=12 5 °C 1 (1 ) (2 ) (3) (4) V GD IG D 0. 1 0 .0 0 1 0 .0 1 F re q u e n c y L im ite d b y PG ( A V ) D e v ic e : ST 3 8 0 C ..C S e rie s 0 .1 1 10 1 00 In st a n t an e o us G a t e C urre n t ( A ) Fig. 11 - Gate Characteristics www.irf.com 7