Bulletin I25203 rev. B 04/00 ST650C..L SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features 790A Center amplifying gate Metal case with ceramic insulator International standard case TO-200AC (B-PUK) Typical Applications DC motor control Controlled DC power supplies AC controllers case style TO-200AC (B-PUK) Major Ratings and Characteristics Parameters ST650C..L Units 790 A 55 °C 1557 A 25 °C @ 50Hz 10100 A @ 60Hz 10700 A @ 50Hz 510 KA2s @ 60Hz 475 KA2s 2000 to 2400 V 200 µs - 40 to 125 °C IT(AV) @ Ths IT(RMS) @ Ths ITSM I 2t VDRM/VRRM tq typical TJ www.irf.com 1 ST650C..L Series Bulletin I25203 rev. B 04/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage VDRM /VRRM , max. repetitive VRSM , maximum non- IDRM/I RRM max. Code peak and off-state voltage repetitive peak voltage @ TJ = T J max V V mA 20 2000 2100 22 2200 2300 24 2400 2500 Type number ST650C..L 80 On-state Conduction Parameter I T(AV) Max. average on-state current @ Heatsink temperature ST650C..L Units Conditions 790 (324) A 180° conduction, half sine wave 55 (85) °C double side (single side) cooled I T(RMS) Max. RMS on-state current 1857 DC @ 25°C heatsink temperature double side cooled I TSM Max. peak, one-cycle 10100 t = 10ms No voltage non-repetitive surge current 10700 t = 8.3ms reapplied t = 10ms 100% VRRM A 8600 I 2t Maximum I2 t for fusing 9150 t = 8.3ms reapplied Sinusoidal half wave, 510 t = 10ms No voltage Initial TJ = TJ max. 475 t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied 370 KA2s 347 I2√t Maximum I2√t for fusing V T(TO)1 Low level value of threshold 5100 voltage r t1 Low level value of on-state V High level value of on-state slope resistance (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.61 mΩ (I > π x IT(AV)),T J = TJ max. 0.35 V TM Max. on-state voltage 2.07 IH Maximum holding current 600 IL Typical latching current 1000 2 (I > π x IT(AV) ),TJ = TJ max. 1.13 slope resistance r t2 t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 1.04 voltage V T(T O)2 High level value of threshold KA2√s V mA I = 1700A, T J = TJ max, t = 10ms sine pulse pk p T J = 25°C, anode supply 12V resistive load www.irf.com ST650C..L Series Bulletin I25203 rev. B 04/00 Switching Parameter di/dt ST650C..L Max. non-repetitive rate of rise 1000 of turned-on current td Typical delay time 1.0 t Typical turn-off time 200 Units Conditions A/µs Gate current 1A, di g /dt = 1A/µs µs q Gate drive 20V, 20Ω, tr ≤ 1µs TJ = T J max, anode voltage ≤ 80% VDRM Vd = 0.67% VDRM, TJ = 25°C ITM = 750A, TJ = T J max, di/dt = 60A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs p Blocking Parameter ST650C..L Units Conditions dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs TJ = TJ max. linear to 80% rated VDRM IDRM IRRM Max. peak reverse and off-state leakage current 80 mA TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM ! ST650C..L Maximum peak gate power 2.0 IGM 3.0 Max. peak positive gate current +VGM Maximum peak positive Maximum peak negative TYP. DC gate voltage required to trigger IGD VGD A TJ = TJ max, t ≤ 5ms V TJ = TJ max, t ≤ 5ms DC gate current not to trigger DC gate voltage not to trigger www.irf.com p p MAX. 200 - 100 200 50 - TJ = - 40°C DC gate current required to trigger p TJ = TJ max, f = 50Hz, d% = 50 5.0 gate voltage VGT W 20 gate voltage IGT TJ = TJ max, t ≤ 5ms 10.0 PG(AV) Maximum average gate power -VGM Units Conditions 2.5 - 1.8 3.0 1.1 10 0.25 mA TJ = 25°C TJ = 125°C TJ = - 40°C V Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = 25°C TJ = 125°C mA V TJ = TJ max Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied 3 ST650C..L Series Bulletin I25203 rev. B 04/00 Thermal and Mechanical Specification Parameter ST650C..L TJ Max. operating temperature range -40 to 125 T Max. storage temperature range -40 to 150 stg RthJ-hs Max. thermal resistance, Units Conditions °C 0.073 junction to heatsink DC operation single side cooled K/W 0.031 RthC-hs Max. thermal resistance, 0.011 case to heatsink 0.006 F Mounting force, ± 10% 14700 N (1500) (Kg) wt Approximate weight 255 g Case style K/W TO - 200AC (B-PUK) DC operation double side cooled DC operation single side cooled DC operation double side cooled See Outline Table ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Sinusoidal conduction Rectangular conduction Single Side Double Side Single Side Double Side Conduction angle Units 180° 0.009 0.009 0.006 0.006 120° 0.011 0.011 0.011 0.011 90° 0.014 0.014 0.015 0.015 60° 0.020 0.020 0.021 0.021 30° 0.036 0.036 0.036 0.036 K/W Conditions TJ = TJ max. Ordering Information Table Device Code ST 65 0 C 24 L 1 1 2 3 4 5 6 7 8 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - L = Puk Case TO-200AC (B-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/µsec (Standard selection) L 4 = 1000V/µsec (Special selection) www.irf.com ST650C..L Series Bulletin I25203 rev. B 04/00 Outline Table 34 (1.34) DIA. MAX. 0.7 (0.03) MIN. 2 7 (1 . 06 ) M AX . TWO PLACES PIN RECEPTACLE AMP. 60598-1 53 (2.09) DIA. MAX. 0.7 (0.03) MIN. 6.2 (0.24) MIN. 20°± 5° 58 .5 (2.3 ) D I A. M AX . 4.7 (0.18) ! Case Style TO-200AC (B-PUK) 36.5 (1.44) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP 1 30 ST 6 5 0 C ..L Se rie s (Sin g le Sid e C o o le d ) R th J-hs (D C ) = 0 .0 7 3 K / W 1 20 1 10 1 00 C o nduc tion An g le 90 30° 80 60 ° 9 0° 70 120° 180° 60 0 50 1 00 1 50 20 0 2 5 0 3 0 0 35 0 4 00 A v e ra g e O n -s ta t e C u rre n t (A ) Fig. 1 - Current Ratings Characteristics www.irf.com M a xim um A llo w a b le H e a t sin k T e m pe ra t u re (°C ) M a x im u m A llo w a b le H e a t sin k T e m p e ra t u re ( °C ) CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN. 13 0 ST 6 5 0 C ..L S e rie s (Sin g le S id e C o o le d ) R thJ-hs (D C ) = 0 .0 7 3 K / W 12 0 11 0 Co nd uc tio n P erio d 10 0 90 30° 60° 80 90 ° 120° 70 180° DC 60 0 10 0 200 300 4 00 5 00 60 0 A v e ra g e O n - sta t e C u rre n t (A ) Fig. 2 - Current Ratings Characteristics 5 ST650C..L Series ST 6 5 0 C ..L Se rie s (D o u ble S id e C o o le d ) R thJ-h s (D C ) = 0 .0 3 1 K / W 12 0 11 0 10 0 90 C o nduc tion A ng le 80 70 1 80° 60 50 120° 90° 40 30 30° 20 10 0 2 00 3 0 0 4 0 0 5 00 6 00 7 0 0 80 0 12 5 0 1 00 90 80 Co nd uc tio n Pe rio d 70 60 50 9 0° 40 6 0° 30 120° 30° 180 ° DC 20 0 2 00 4 00 60 0 80 0 10 0 0 1 2 00 1 40 0 Fig. 4 - Current Ratings Characteristics R M S Lim it 10 0 0 750 C o nd uc tio n A ng le 500 S T 6 5 0 C ..L S e rie s T J = 1 2 5 °C 250 0 0 1 10 Fig. 3 - Current Ratings Characteristics 1 80° 1 20° 90° 60° 30° 15 0 0 S T 6 5 0 C ..L S e rie s (D o u b le S id e C o o le d ) R th J-hs (D C ) = 0 .0 3 1 K / W 1 20 A v e ra g e O n -st a t e C u rre n t (A ) 20 0 0 17 5 0 1 30 A v e ra g e O n - sta t e C u rre n t (A ) 1 0 0 2 00 3 0 0 4 0 0 50 0 6 0 0 70 0 8 00 M ax im u m A v e ra g e O n - st a t e P o w e r Lo ss (W ) 0 2 40 0 DC 1 80° 1 20° 90° 60° 30° 2 20 0 2 00 0 1 80 0 1 60 0 1 40 0 R M S Lim it 1 20 0 1 00 0 8 00 C o ndu ct io n P erio d 6 00 S T 6 5 0 C ..L S e rie s T J = 1 2 5 °C 4 00 2 00 0 0 20 0 4 00 600 80 0 10 0 0 1 20 0 1 4 00 A v e ra g e O n -st a t e C u rre n t (A ) A v e ra g e O n -st a te C urre n t (A ) Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics 10 0 00 A t A ny R at e d L o a d C o nd itio n A n d W ith R at e d V RR M A p plie d Fo llo w in g Su rge . In itia l T J = 1 2 5 °C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 9 00 0 8 00 0 7 00 0 6 00 0 5 00 0 ST 6 5 0 C ..L S e r ie s 4 00 0 1 6 60 ° M a x im u m A llo w a b le H e a tsin k Te m p e ra tu re (° C ) 13 0 10 10 0 P e a k H a lf Sin e W a v e O n -st a t e C u rre n t (A ) P e a k H a lf Sin e W a v e O n -st a te C u rre n t (A ) M a xim u m A v e ra g e O n -st a te P o w e r Lo ss (W ) M a xim u m A llo w a b le H e a t sin k T e m p e ra t u re (°C ) Bulletin I25203 rev. B 04/00 1 2 00 0 M a x im u m N o n R e p e t it iv e S u rg e C u rre n t V e rsu s P u lse T ra in D u ra tio n . C o n t ro l O f C o n d u c t io n M a y N o t B e M a in t a in e d . In it ia l TJ = 1 2 5 °C 1 0 00 0 N o V o lt a g e R e a p p lie d R a te d VR RM Re a p p lie d 90 0 0 1 1 00 0 80 0 0 70 0 0 60 0 0 50 0 0 S T6 5 0 C ..L S e rie s 40 0 0 0 .0 1 0. 1 1 Nu m be r O f Equ al Am p litud e H alf C yc le C urren t Pulse s (N ) P u lse T ra in D u ra t io n (s) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled www.irf.com ST650C..L Series Bulletin I25203 rev. B 04/00 Instan tan eous On -stat e Current (A) 10000 T J = 25°C 1000 T = 125°C J ST650C..L Series 100 0. 5 1 1.5 2 2.5 3 Instan tan eous O n -stat e V oltage (V ) T ra n sie n t T h e rm a l Im pe d a nc e Z thJ- hs (K / W ) Fig. 9 - On-state Voltage Drop Characteristics 0. 1 St e a d y St a te V a lu e R thJ-hs = 0 .0 7 3 K/ W ( Sin gle Sid e C o o le d) R thJ-hs = 0 .0 3 1 K/ W ( D o u ble Sid e C o o le d ) 0 .0 1 ( D C O p e ra t io n ) ST 6 5 0 C ..L Se rie s 0 .0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 S q ua re W a v e P u lse D u ra t io n ( s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 100 In st a nt an e o us G a te V o lta g e (V ) Re c t a n g u la r g a t e p ulse a ) R e c o m m e n d e d lo a d lin e f o r ra t e d d i/ dt : 2 0 V , 1 0 o h m s; t r<= 1 µ s b ) Re c o m m e n d e d lo a d lin e fo r < = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s 10 t r< = 1 µ s (1) (2) (3) (4) PG M PG M PG M PG M = = = = 10W , 20W , 40W , 60W , tp tp tp tp = = = = 4m s 2m s 1m s 0 .6 6 m s (a ) (b ) Tj=-40 °C Tj=25 °C Tj=125 °C 1 (1) (2) (3) (4) VG D IG D 0 .1 0 .0 0 1 0 .0 1 F re q u e n c y L im ite d b y P G ( A V ) ST 6 5 0 C ..L Se rie s 0 .1 1 10 1 00 In st a n t an e o us G a t e C u rre n t ( A ) Fig. 11 - Gate Characteristics www.irf.com 7