ZXMN3B14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V : RDS(on)=0.08 ; ID=3.5A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES PACKAGE • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23 package APPLICATIONS • DC-DC converters • Power management functions • Disconnect switches • Motor control PINOUT ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN3B14FTA 7” 8mm 3,000 units ZXMN3B14FTC 13” 8mm 10,000 units DEVICE MARKING • 3B4 ISSUE 2 - JANUARY 2006 1 SEMICONDUCTORS ZXMN3B14F ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 30 V Gate-Source Voltage V GS ⫾12 V Continuous Drain Current @ V GS = 4.5V; T A =25°C (b) @ V GS = 4.5V; T A =70°C (b) @ V GS = 4.5V; T A =25°C (a) ID 3.5 2.9 2.9 A A A Pulsed Drain Current (c) I DM 16 A Continuous Source Current (Body Diode) (b) IS 2.4 A Pulsed Source Current (Body Diode) (c) I SM 16 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 1 W 8 mW/°C (b) PD Power Dissipation at T A =25°C Linear Derating Factor T j , T stg Operating and Storage Temperature Range 1.5 W 12 mW/°C -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL (a) Junction to Ambient (b) Junction to Ambient VALUE UNIT R ⍜JA 125 °C/W R ⍜JA 83 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t ⱕ 5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature. ISSUE 2 - JANUARY 2006 SEMICONDUCTORS 2 ZXMN3B14F TYPICAL CHARACTERISTICS ISSUE 2 - JANUARY 2006 3 SEMICONDUCTORS ZXMN3B14F ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. 30 TYP. MAX. UNIT CONDITIONS STATIC V I D = 250A, V GS =0V Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS 1 A V DS = 30V, V GS =0V Gate-Body Leakage I GSS 100 nA Gate-Source Threshold Voltage V GS(th) V GS =⫾12V, V DS =0V I D = 250A, V DS =V GS Static Drain-Source On-State R DS(on) 0.080 ⍀ 0.140 0.7 V ⍀ V GS = 4.5V, I D = 3.1A V GS = 2.5V, I D = 2.2A g fs 8.5 S V DS = 15V, I D = 3.1A (1) Resistance Forward Transconductance (1) (3) DYNAMIC (3) Input Capacitance C iss 568 pF Output Capacitance C oss 101 pF Reverse Transfer Capacitance SWITCHING (2) (3) C rss 66 pF Turn-On-Delay Time t d(on) 3.6 ns Rise Time tr 4.9 ns Turn-Off Delay Time t d(off) 17.3 ns Fall Time tf 9.8 ns Total Gate Charge Qg 6.7 nC Gate-Source Charge Q gs 1.4 nC Gate Drain Charge Q gd 1.8 nC Diode Forward Voltage (1) V SD 0.82 Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr V DS = 15V, V GS =0V f=1MHz V DD = 15V, V GS = 4.5V I D = 1A R G ≅ 6.0⍀ V DS = 15V, V GS = 4.5V I D = 3.1A SOURCE-DRAIN DIODE 0.95 V T j =25°C, I S = 3.1A, 10.8 ns 4.54 nC T j =25°C, I F = 1.6A, di/dt=100A/s V GS =0V NOTES (1) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 2 - JANUARY 2006 SEMICONDUCTORS 4 ZXMN3B14F N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - JANUARY 2006 5 SEMICONDUCTORS ZXMN3B14F N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - JANUARY 2006 SEMICONDUCTORS 6 ZXMN3B14F PACKAGE OUTLINE PAD LAYOUT Controlling dimensions are in millimetres. Approximate conversions are given in inches PACKAGE DIMENSIONS MILLIMETRES DIM INCHES MIN MAX MIN MAX A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 MILLIMETRES DIM INCHES MIN MAX MIN MAX H 0.33 0.51 0.013 0.020 K 0.01 0.10 0.0004 0.004 C ᎏ 1.10 ᎏ 0.043 L 2.10 2.50 0.083 0.0985 D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM ⍜ 10⬚ TYP 10⬚ TYP G 1.90 NOM 0.075 NOM © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - JANUARY 2006 7 SEMICONDUCTORS