2SA2092 Transistors -1A / -60V Bipolar transistor 2SA2092 zExternal dimensions (Unit : mm) zApplications High-speed switching, low frequency amplification TSMT3 zFeature 1) High speed switching. (tf : Typ. : 30ns at IC = -1A) 2) Low saturation voltage. (Typ. : −200mV at IC = −500mA, IB = −50mA) 3) Strong discharge resistance for inductive load and capacitance load. 4) Low switching noise. 1.0MAX 0.85 0.4 0.7 1.6 2.8 (3) zAbsolute maximum ratings (Ta=25°C) 0.95 0.95 Limits Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −60 V Each lead has same dimensions Abbreviated symbol : VN Unit VEBO −6 V DC IC −1 A 2SA2092 PULSE ICP ∗1 −2 A Power dissipation PC ∗2 500 mW Junction temperature Tj 150 °C Tstg −55 to +150 °C Range of storage temperature Package TSMT3 Packaging type Taping Code Part No. Collector current 0.16 1.9 zPackaging specifications Symbol Emitter-base voltage 0.3~0.6 (1) Base (2) Emitter (3) Collector 0~0.1 (2) (1) zStructure PNP epitaxial planar silicon transistor Parameter 2.9 Basic ordering unit (pieces) TL 3000 zhFE rank Q 120-270 ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BVCEO −60 − − V IC= −1mA Collector-base breakdown voltage BVCBO −60 − − V IC= −100µA Emitter-base breakdown voltage BVEBO −6 − − V IE= −100µA Collector cut-off current ICBO − − −1.0 µA VCB= −40V Emitter cut-off current IEBO − − −1.0 µA VEB= −4V VCE(sat) − −200 −500 mV IC= −500mA, IB= −50mA VCE= −2V, IC= −100mA Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance hFE ∗3 120 − 270 − fT ∗1 − 300 − MHz − 15 − pF VCB= −10V, IE=0, f=1MHz IC= −1A, IB1= −100mA IB2=100mA VCC ∼ − −25V Cob Turn-on time ton − 30 − ns Storage time tstg − 100 − ns − 30 − ns Fall time tf ∗2 VCE= −10V, IE=100mA, f=10MHz ∗1 Pulse measurement ∗2 See switching test circuit ∗3 hFE rank 1/3 2SA2092 Transistors z Electrical characteristics curve 10 200 VCE=2V 1000 1000µA 900µA VCE=2V 800µA 1 25°C −40°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 400µA 80 300µA 200µA 40 1000 1 2 3 4 10 Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) VCE=5V VCE=3V VCE=2V 10 1 10 125°C 0.1 25°C 1 25°C 125°C 0.1 1 10 TRANSITION FREQUENCY : FT (MHz) −40°C 1 0.1 0.1 IC/IB=20/1 IC/IB=10/1 10 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage vs. collector current (ΙΙ) vs. collector current ( Ι ) IC/IB=10/1 0.01 1 0.01 0.001 1000 10 BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) 0.1 10 Ta=25°C COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current (ΙΙ) 0.01 0.001 0.01 1 10 1 COLLECTOR CURRENT : IC (A) 0.1 Fig.3 DC current gain vs. collector current ( Ι ) IC/IB=10/1 0.01 0.001 0.01 COLLECTOR CURRENT : IC (A) COLLECOTR OUTPUT CAPACITACNE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 0.1 25°C 10 1 0.001 5 −40°C 0.01 −40°C 100µA IB=0µA Fig.2 Typical output characteristics Fig.1 Grounded emitter propagation characteristics 1 0.001 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VEB (V) DC CURRENT GAIN : hFE 500µA 120 0 0 0.01 100 600µA COLLECTOR SATURATION VOLTAGE : VCE (sat)(V) 125°C 160 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (A) 125°C 700µA Ta=25°C VCE=10V 100 10 1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (A) Fig.7 Base-emitter saturation voltage vs. collector current Fig.8 Transition frequency 10 1000 100 Ta=25°C f=1MHz Cib Cob 10 1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCE (V) EMITTER TO BASE VOLTAGE : VBE (V) Fig.9 Collector output capacitance Emitter input capacitance 2/3 2SA2092 Transistors 10 Ta=25°C VCC= −25V IC/IB= −IC/IB2=10 10ms COLLECTOR CURRENT : IC (A) SWITCHING TIME : SW (ns) 1000 tstg 100 tf 1ms 500µs 1 100ms 0.1 DC 0.01 ton Single non repetitive pulse 10 0.01 0.1 1 0.001 0.01 10 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) Fig.10 Switching Time Fig.11 Safe operating area zSwitching test circuit RL=25Ω IC IB 1 VIN PW VCC −25V IB 2 PW 50µs DUTY CYCLE 1% IB 2 IB 1 Base current waveform Ton Tstg Tf 90% Collector current waveform IC 10% 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1