INFINEON PTFA041501F

PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 420 – 500 MHz
Description
The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs
designed for ultra-linear CDMA power amplifier applications.
They are available in thermally-enhanced ceramic open-cavity
packages . Manufactured with Infineon's advanced LDMOS process,
these devices provide excellent thermal performance and superior
reliability.
VDD = 28 V, IDQ = 900 mA, ƒ = 470 MHz
•
Broadband internal matching
•
Typical CDMA performance at 470 MHz, 28 V
- Average output power = 60 W
- Linear Gain = 21 dB
- Efficiency = 41%
•
Typical CW performance, 470 MHz, 28 V
- Output power at P–1dB = 175 W
- Efficiency = 62%
•
Integrated ESD protection: Human Body Model,
Class 1 (minimum)
•
Excellent thermal stability
•
Low HCI drift
•
Capable of handling 10:1 VSWR @ 28 V,
150 W (CW) output power
•
Pb-free and RoHS-compliant
45
-30
Efficiency
–15°C
25°C
90°C
-35
-40
40
35
30
-45
25
-50
-55
20
ACPR
15
-60
10
ALT
-65
-70
5
-75
0
36
38
40
42
44
46
Drain Efficiency (%)
Adjacent Channel Power Ratio (dB)
PTFA041501F
Package H-37248-2
Features
Single-carrier CDMA IS-95 Performance
-25
PTFA041501E
Package H-36248-2
48
Average Output Power (dBm)
RF Characteristics
Single-carrier CDMA IS-95 Measurements (not subject to production test—verified by design/characterization in
Infineon test fixture)
VDD = 28 V, IDQ = 900 mA, POUT = 60 W average, ƒ = 470 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
—
21
—
dB
Drain Efficiency
ηD
—
41
—
%
ACPR
—
–33
—
dB
Adjacent Channel Power Ratio
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 900 mA, POUT = 150 W PEP, ƒ = 470 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
20.0
21.0
—
dB
Drain Efficiency
ηD
45.0
46.5
—
%
Intermodulation Distortion
IMD
—
–29
–28
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 µA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, V GS = 0 V
IDSS
—
—
1.0
µA
On-State Resistance
VGS = 10 V, V DS = 0.1 V
RDS(on)
—
0.07
—
Ω
Operating Gate Voltage
VDS = 28 V, IDQ = 900 mA
VGS
2
2.48
3
V
Gate Leakage Current
VGS = 10 V, V DS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C, 150 W CW)
RθJC
0.42
°C/W
Ordering Information
Type and Version
Package Type
Package Description
Shipping
PTFA041501E V4
H-36248-2
Thermally-enhanced slotted flange, single-ended
Tray
PTFA041501E V4 R250
H-36248-2
Thermally-enhanced slotted flange, single-ended
Tape & Reel, 250 pcs
PTFA041501F V4
H-37248-2
Thermally-enhanced earless flange, single-ended
Tray
PTFA041501F V4 R250
H-37248-2
Thermally-enhanced earless flange, single-ended
Tape & Reel, 250 pcs
*See Infineon distributor for future availability.
Data Sheet
2 of 11
Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
Broadband Circuit Performance
P OUT, Gain & Efficiency (at P-1dB) vs. Frequency
VDD = 28 V, IDQ = 900 mA, POUT = 80 W
-15
40
Return Loss
-16
-17
30
25
-18
Gain
-19
20
15
460
462
464
466
-20
470
468
20.9
60
20.7
50
45
20.4
35
20.3
30
20.2
Gain
25
20.1
20
20
15
460
462
464
466
19.9
470
468
Power Sweep at selected IDQ
Power Sweep, CW Conditions
VDD = 28 V, ƒ = 470 MHz
VDD = 28 V, IDQ = 900 mA, ƒ = 470 MHz
21.5
21.0
20.5
IDQ = 1125 mA
20.0
19.5
Gain (dB)
Gain (dB)
20.5
40
Frequency (MHz)
22.0
IDQ = 900 mA
19.0
22
80
21
70
20
60
Gain
19
18
50
40
Efficiency
17
IDQ = 675 mA
18.0
20.6
Output Power
Frequency (MHz)
18.5
20.8
Efficiency
55
30
TCASE = 25°C
TCASE = 90°C
16
17.5
17.0
20
15
39
41
43
45
47
49
51
53
55
Data Sheet
10
39
Output Power (dBm)
Drain Efficiency (%)
35
Efficiency (%), Output Power (dBm)
-14
Efficiency
Input Return Loss (dB)
45
65
Gain (dB)
-13
50
Gain (dB), Efficiency (%)
VDD = 28 V, IDQ = 900 mA
41
43
45
47
49
51
53
55
Output Power (dBm)
3 of 11
Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
IM3 vs. Output Power at Selected Biases
VDD = 28 V, IDQ = 900 mA,
VDD = 28 V , ƒ1 = 469 MHz, ƒ 2 = 470 MHz
ƒ 1 = 469 MHz, ƒ 2 = 470 MHz
-20
-25
45
-27
40
IM3
35
-30
30
-40
25
IM5
-50
20
-60
IM7
-70
36
38
40
42
44
46
48
-29
IMD (dBc)
Efficiency
-10
50
Drain Efficiency (%)
Intermodulation Distortion (dBc)
0
675 mA
-31
-33
900 mA
-35
-37
-39
15
-41
10
-43
1125 mA
36
50
38
Output Power (dBm), avg.
42
44
46
48
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
IDQ = 900 mA, ƒ = 470 MHz
55
0.29 A
Normalized Bias Voltage (V)
1.03
54
53
52
51
50
24
26
28
30
0.88 A
1.02
1.47 A
1.01
2.20 A
1.00
4.41 A
0.99
6.61 A
8.81 A
0.98
11.02 A
0.97
0.96
0.95
-20
32
0
20
40
60
80
100
Case Temperature (°C)
Supply Voltage (V)
Data Sheet
50
Output Power (dBm)
Output Power (at 1 dB compression)
vs. Supply Voltage
Output Power (dBm)
40
4 of 11
Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
RD G
Broadband Circuit Impedance
S T OW
A
Z Source Ω
Frequency
Z Load Ω
MHz
R
jX
R
jX
450
0.88
–3.20
1.33
0.22
455
0.84
–3.20
1.35
0.31
460
0.84
–3.10
1.40
0.38
465
0.84
–3.00
1.41
0.47
470
0.83
–2.90
1.44
0.57
0.2
0.1
0.0
470 MHz
450 MHz
Z Source
470 MHz
450 MHz
0.1
<---
S
Z Load
D L OA D S T OW AR
NGT H
G
EL E
WAV
Z Load
- W AV E LE NGTH
Z Source
Z0 = 50 Ω
0.1
D
See next page for circuit information
Data Sheet
5 of 11
Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Reference Circuit
C1
0.001µF
R2
1.3K V
R6
1.2K V
QQ1
LM7805
VDD
Q1
BCP56
C2
0.001µF
R3
2K V
C3
0.001µF
R4
2K V
R5
3.3K V
C4
10µF
35V
R6
10 V
C5
0.1µF
L1
VDD
R7
5.1K V
C6
120pF
C11
1µF
C10
100pF
C12
10µF
50V
l7
C13
0.1µF
50V
C14
10µF
50V
l4
C8
11pF
C7
100pF
J1
l1
l2
l3
l6
DUT
l5
C9
4.3pF
l10
l8
C20
5.6pF
C22
11pF
l11
l12
C21
5.1pF
C23
11pF
C25
100pF
l13
J2
l14
C24
8.2pF
l9
L2
C15
100pF
C16
1µF
C17
10µF
50V
C18
0.1µF
50V
C19
10µF
50V
V66000-G9267-D631-01-7606.dwg
Reference circuit schematic for ƒ = 460 MHz
Circuit Assembly Information
DUT
PCB
PTFA041501E or PTFA041501F
LTN/PTFA041501EF
Microstrip
Electrical Characteristics at 460 MHz 1
l1
l2
l3
l4
l5
l6
l7
l8
l9
l 10
l 11
l 12
l 13
l 14
Data Sheet
0.016
0.058
0.097
0.081
0.040
0.158
0.030
0.158
0.030
0.025
0.105
0.006
0.104
0.014
LDMOS Transistor
0.76 mm [.030"] thick, εr = 9.2
Rogers TMM10
Dimensions L x W (mm)
λ, 50.69 Ω
λ, 24.34 Ω
λ, 4.85 Ω
λ, 50.69 Ω
λ, 4.85 Ω
λ, 37.73 Ω
λ, 10.94 Ω
λ, 37.73 Ω
λ, 10.94 Ω
λ, 5.58 Ω
λ, 5.58 Ω
λ, 5.58 Ω
λ, 21.37 Ω
λ, 50.69 Ω
4.32 x 0.71
14.22 x 2.54
21.59 x 17.78
21.59 x 0.71
8.89 x 17.78
40.64 x 1.27
5.59 x 7.11
40.64 x 1.27
5.59 x 7.11
5.59 x 15.24
23.62 x 15.24
1.27 x 15.24
25.4 x 3.05
3.81 x 0.71
6 of 11
2 oz. copper
Dimensions L x W (in.)
0.170
0.560
0.850
0.850
0.350
1.600
0.220
1.600
0.220
0.220
0.930
0.050
1.000
0.150
x
x
x
x
x
x
x
x
x
x
x
x
x
x
0.028
0.100
0.700
0.280
0.700
0.050
0.280
0.050
0.280
0.600
0.600
0.600
0.120
0.028
Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
GND
R5
R4
C4
C14
C12
C3
R3 C2
R2
C5
C6
QQ1 C1
VDD
R6
R7
L1
R1
C10
Q1
C8
C20
C22
C13
C11
C24 C25
RF IN
RF OUT
C7
C21
C9
C23
C15 C16
C18
L2
041501in_03
041501out_03
C17
C19
V66100-G9267-D631-01-7631.dwg
R5
R4
QQ1 C1
C4
C3
R3 C2
R2
C5
R6
R7
R1
Q1
C8
Reference circuit assembly diagram (not to scale). Gerber files for this circuit available on request.
Data Sheet
7 of 11
Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Component
Description
Suggested Manufacturer
P/N or Comment
C1, C2, C3
C4
C5, C13, C18
C6
C7, C10, C15, C25
C8, C22, C23
C9
C11, C16
C12, C14, C17, C19
C20
C21
C24
L1, L2
Q1
QQ1
R1
R2
R3
R4
R5
R6
R7
Capacitor, 0.001 µF
Tantalum capacitor, 10 µF, 35 V
Capacitor, 0.1 µF
Ceramic capacitor, 120 pF
Ceramic capacitor, 100 pF
Ceramic capacitor, 11 pF
Ceramic capacitor, 4.3 pF
Capacitor, 1.0 µF
Capacitor, 10 µF, 50 V
Ceramic capacitor, 5.6 pF
Ceramic capacitor, 5.1 pF
Ceramic capacitor, 8.2 pF
Ferrite, 6 mm
Transistor
Voltage regulator
Chip resistor, 1.2k ohms
Chip resistor, 1.3k ohms
Chip resistor, 2k ohms
Potentiometer, 2k ohms
Chip resistor, 3.3k ohms
Chip resistor, 10 ohms
Chip resistor, 5.1k ohms
Digi-Key
Digi-Key
Digi-Key
ATC
ATC
ATC
ATC
ATC
Garrett Electronics
ATC
ATC
ATC
Ferroxcube
Infineon Technologies
National Semiconductor
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
PCC1772CT-ND
PCS6106TR-ND
P4525-ND
100B 121
100B 101
100B 110
100B 4R3
920C105
TPS106K050R0400
100B 5R6
100B 5R1
100B 8R2
53/3/4.6-452
BCP56
LM7805
P1.2KGCT-ND
P1.3KGCT-ND
P2.0KECT-ND
3224W-202ETR-ND
P3.3KECT-ND
P10ECT-ND
P5.1KECT-ND
Data Sheet
8 of 11
Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-36248-2
(45° X 2.72
[.107])
CL
4.83±0.51
[.190±.020]
D
FLANGE 9.78
[.385] LID 9.40 +0.10
19.43 ±0.51
[.765±.020]
–0.15
[.370 +.004
–.006 ]
S
C
L
G
2X 12.70
[.500]
2X R1.63
[R.064]
4X R1.52
[R.060]
27.94
[1.100]
19.81±0.20
[.780±.008]
1.02
[.040]
C
L
SPH 1.57
[.062]
3.61±0.38
[.142±.015]
0.0381 [.0015]
-A34.04
[1.340]
0 7 1 1 1 7 _ h -3 6 2 4 8 -2 _ p o
Diagram Notes—unless otherwise specified:
Data Sheet
1.
Lead thickness: 0.102 +0.051/–0.025 [.004 +.002/–.001].
2.
All tolerances ± 0.127 [.005] unless specified otherwise.
3.
Pins: D = drain, S = source, G = gate.
4.
Interpret dimensions and tolerances per ASME Y14.5M-1994.
5.
Primary dimensions are mm. Alternate dimensions are inches.
6.
Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]
9 of 11
Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package H-37248-2
( 45° X 2.72
[.107])
CL
4.83±0.51
[.190±.020]
D
+0.10
LID 9.40 –0.15
[.370+.004
–.006 ]
FLANGE 9.78
[.385]
C
L
19.43±0.51
[.765±.020]
G
4X R0.508+0.381
–0.127
[R.020+.015
– .005]
2X 12.70
[.500]
19.81±0.20
[.780±.008]
C
L
SPH 1.57
[.062]
1.02
[.040]
0.0381 [.0015] -A-
S
0 7 1 1 1 7 _ h -3 7 2 4 8 -2 _ p o
3.61±0.38
[.142±.015]
20.57
[.810]
Diagram Notes—unless otherwise specified:
1.
Lead thickness: 0.102 +0.051/–0.025 [.004 +.002/–.001].
2.
All tolerances ± 0.127 [.005] unless specified otherwise.
3.
Pins: D = drain, S = source, G = gate.
4.
Interpret dimensions and tolerances per ASME Y14.5M-1994.
5.
Primary dimensions are mm. Alternate dimensions are inches.
6.
Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
10 of 11
Rev. 01.1, 2010-01-20
PTFA041501EF V4
Confidential, Limited Internal Distribution
Revision History:
2010-01-20
none
Previous Version:
Data Sheet
Page
Subjects (major changes since last revision)
6, 9, 10
Minor cosmetic changes only
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Please send your proposal (including a reference to this document) to:
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or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2010-01-20
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 01.1, 2010-01-20