PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to 770 MHz frequency band. These devices feature internal I/O matching and thermally-enhanced, open-cavity ceramic packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. 21 65 20 55 Gain (dB) 45 18 35 17 25 16 Drain Efficiency (%) VDD = 30 V, IDQ = 1.9 A, ƒ = 765 MHz Gain 15 Efficiency 15 5 30 35 40 45 50 PTFA072401FL Package H-34288-2 Features Gain & Efficiency vs. Output Power 19 PTFA072401EL Package H-33288-2 55 Output Power (dBm) • Broadband internal matching • Typical two-carrier WCDMA performance at 770 MHz, 30 V - Average output power = 40 W - Linear Gain = 19 dB - Efficiency = 25% - Intermodulation distortion = –39 dBc • Typical CW performance, 770 MHz, 30 V - Output power at P–1dB = 240 W - Efficiency = 58% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power • Thermally-enhanced packages, Pb-free and RoHS compliant with low gold (<0.25 micron) plating RF Characteristics Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1800 mA, POUT = 40 W average ƒ1 = 760 MHz, ƒ2 = 770 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 19 — dB Drain Efficiency ηD — 25 — % Intermodulation Distortion IMD — –39 — dBc All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 02, 2009-03-27 PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1800 mA, POUT = 220 W PEP, ƒ = 765 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 18 19 — dB Drain Efficiency ηD 43 45 — % Intermodulation Distortion IMD — –29 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA RDS(on) — 1.82 — Ω On-State Resistance VGS = 10 V, VDS = 0.1 V Operating Gate Voltage VDS = 30 V, IDQ = 2100 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 700 W 4.0 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 240 W CW) RθJC 0.28 °C/W Ordering Information Type and Version Package Outline Package Description Shipping Marking PTFA072401EL V4 H-33288-2 Thermally-enhanced slotted flange, single-ended Tray PTFA072401EL PTFA072401FL V4 H-34288-2 Thermally-enhanced earless flange, single-ended Tray PTFA072401FL *See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 02, 2009-03-27 PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Typical Performance (data taken in Infineon production test fixture) Two-tone Drive-up Broadband Performance VDD = 30 V, IDQ = 1800 mA, ƒ = 765 MHz, tone spacing = 1 MHz VDD = 30 V, IDQ = 1800 mA, POUT = 126 W 45 -5 40 -10 35 -15 Return Loss 30 -20 25 -25 Gain 20 -30 15 700 730 -35 790 760 50 -25 Intermodulation Distortion (dBc) Efficiency Efficiency -30 -35 40 IM3 IM5 -40 35 -45 30 -50 25 -55 15 -60 42 44 46 48 50 52 54 Power Sweep IDQ = 1.8 A, ƒ = 770 MHz VDD = 30 V, ƒ = 770 MHz V DD = 26 V V DD = 28 V V DD = 32 V 21 20 60 48 17 Power Gain (dB) 52 Gain (dB) 18 44 40 IDQ = 2.2 A IDQ = 2.0 A 20 19 Efficiency 56 56 Output Power, PEP (dBm) CW Performance, selected voltages 64 20 IM7 Frequency (MHz) Drain Efficiency (%) 45 Drain Efficiency (%) 0 Input Return Loss (dB) Gain (dB), Efficiency (%) 50 19 IDQ = 1.8 A IDQ = 1.6 A 18 17 16 16 15 15 IDQ = 1.4 A Gain 36 49 50 51 52 53 54 30 55 Output Power (dBm) Data Sheet 35 40 45 50 55 Output Power (dBm) 3 of 10 Rev. 02, 2009-03-27 PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Typical Performance (cont.) 2-Carrier WCDMA Performance Bias Voltage vs. Temperature VDD = 30 V, IDQ = 1.9 A, ƒ = 765 MHz Voltage normalized to typical gate voltage, series show current 60 IM3 -35 30 -40 -45 20 -50 ACPR 10 Efficiency -55 Normalized Bias Voltage (V) -30 ACPR (dBc) 40 1.03 -25 TCASE = 25°C TCASE = 90°C 50 Drain Efficiency (%) 2.334 A -20 30 32 34 36 38 40 42 44 46 9.33 A 1.01 11.64 A 1.00 13.98 A 48 50 16.32 A 0.99 18.66 A 0.98 21 A 0.97 0.96 -20 -60 0 4.65 A 1.02 0 20 40 60 80 100 Case Temperature (°C) Output Power (dBm) See next page for impedance data Data Sheet 4 of 10 Rev. 02, 2009-03-27 PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Broadband Circuit Impedance Z Source Ω Frequency D Z Source Z Load G MHz R jX R jX 725 2.53 –4.83 1.64 –1.54 736 2.48 –4.64 1.55 –1.48 748 2.44 –4.41 1.46 –1.33 759 2.41 –4.22 1.42 –1.17 770 2.37 –4.04 1.36 –1.11 RA S Z Load Ω 0.5 0.4 0.3 0.2 Z Source 0.1 D L OA D S T OW AR NGT H 0 .0 0 .1 770 MHz 725 MHz Z Load 770 MHz 725 MHz 0.1 W <--- A VE LE - W AV E LE NGT H S T OW A RD GEN E Z0 = 50 Ω 0. 2 Data Sheet 5 of 10 Rev. 02, 2009-03-27 PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Reference Circuit C1 0.001µF R2 1.3K V R1 1.2K V QQ1 LM7805 VDD Q1 BCP56 C2 0.001µF C3 0.001µF R3 2K V R4 2K V R9 2K V R5 10 V C4 0.1µF R6 10 V C5 10µF 35V L1 VDD R7 5.1KV C6 4.7µF C8 62pF C7 0.1µF R8 10 V l1 l3 C10 3.9pF C16 10µF 35V l7 l9 l6 C11 9.1pF C24 62pF C22 3.9pF DUT l2 C15 0.1µF C14 10µF C13 2.2µF l4 C9 62pF J1 C12 62pF l5 l10 l 11 l 12 l13 J2 C23 3.9pF l8 L2 C17 62pF C18 2.2µF C19 10µF C20 0.1µF C21 10µF 35V Reference circuit schematic for ƒ = 770 MHz Circuit Assembly Information DUT PCB Microstrip l1 l2, l3 l4 l5 l6 l7, l8 l9 l10 (taper) l11 (taper) l12 l13 Data Sheet PTFA072401EL or PTFA072401FL 0.76 mm [.030"] thick, er = 3.48 Electrical Characteristics at 770 MHz 0.025 0.048 0.002 0.145 0.094 0.108 0.140 0.058 0.004 0.005 0.016 LDMOS Transistor Rogers RO4350 Dimensions: L x W (mm) λ, 50.7 Ω λ, 38.4 Ω λ, 76.8 Ω λ, 76.8 Ω λ, 7.8 Ω λ, 44.5 Ω λ, 6.5 Ω λ, 6.5 Ω / 29.4 Ω λ, 29.4 Ω / 38.4 Ω λ, 38.4 Ω λ, 50.7 Ω 5.84 x 1.65 11.18 x 2.54 0.51 x 0.76 35.43 x 0.76 20.32 x 17.78 25.40 x 2.03 29.97 x 21.59 13.13 x 21.59 / 3.68 0.84 x 3.68 / 2.54 1.27 x 2.54 3.76 x 1.65 6 of 10 1 oz. copper Dimensions: L x W (in.) 0.230 x 0.065 0.440 x 0.100 0.020 x 0.030 1.395 x 0.030 0.800 x 0.700 1.000 x 0.080 1.180 x 0.850 0.517 x 0.850 / 0.145 0.033 x 0.145 / 0.100 0.050 x 0.100 0.148 x 0.065 Rev. 02, 2009-03-27 PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Reference Circuit (cont.) VDD V DD LM RF_IN RF_OUT VDD a072401efl_cd_3- 18- 09 Reference circuit asembly diagram* (not to scale) Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4, C7, C15, C20 C5, C6 C8, C9, C12, C17, C24 C10, C22, C23 C11 C13, C18 C14, C16, C19, C21 L1, L2 Q1 QQ1 R1 R2 R3, R9 R4 R5, R6, R8 R7 Capacitor, 0.001 µF Capacitor, 0.1 µF Tantalum Capacitor, 10 µF, 35 V Capacitor, 4.7 µF, 16 V Ceramic capacitor, 62 pF Ceramic capacitor, 3.9 pF Ceramic capacitor, 9.1 pF Capacitor, 2.2 µF Tantalum Capacitor, 10 µF, 35 V Ferrite, 8.9 mm Transistor Voltage Regulator Chip resistor, 1.2k Ω Chip resistor, 1.3k Ω Chip resistor, 2k Ω Variable Resistor 2k Ω Chip resistor, 10 Ω Chip resistor 5.1k Ω Digi-Key Digi-Key Digi-Key Digi-Key ATC ATC ATC Digi-Key Digi-Key Digi-Key Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key PCC1772CT-ND PCC104BCT-ND 399-1655-2-ND PCS3475CT-ND 100B 620 100B 3R9 100B 9R1 445-1447-2-ND PCS6106TR-ND 240-2511-2-ND BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P5.1KECT-ND Data Sheet 7 of 10 Rev. 02, 2009-03-27 PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Package Outline Specifications Package H-33288-2 C66065-A0003-C723-01-0027 H-33288-2.dwg Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D = drain, S = source, G = gate. 5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 6. Gold plating less than 0.25 micron [10 microinch]. Data Sheet 8 of 10 Rev. 02, 2009-03-27 PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-34288-2 C66065-A0003-C724-01-0027 H-34288-2.dwg Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D = drain, S = source, G = gate. 5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 6. Gold plating less than 0.25 micron [10 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 9 of 10 Rev. 02, 2009-03-27