PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 – 770 MHz Description The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 725 to 770 MHz frequency band. Features include internal I/O matching, and thermally-enhanced, ceramic open-cavity packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. -20 60 -25 55 50 IM3 -35 45 40 IM5 -45 35 Efficiency -50 30 -55 25 IM7 -60 Drain Efficiency (%) Intermodulation Distortion (dBc) VDD = 30 V, IDQ = 900 mA, ƒ = 765 MHz, tone spacing = 1 MHz -40 15 46 48 50 • Thermally-enhanced packages, Pb-free and RoHS-compliant • Broadband internal matching • Typical CDMA2000 performance at 770 MHz, 30 V - Average output power = 35 W - Linear Gain = 18 dB - Efficiency = 34% - Adjacent channel power = –50 dBc • Typical CW performance, 770 MHz, 30 V - Output power at P–1dB = 165 W - Efficiency = 62% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 30 V, 170 W (CW) output power 20 -65 44 PTFA071701F* Package H-37248-2 Features Two-tone Drive-up -30 PTFA071701E* Package H-36248-2 52 54 Output Power, PEP (dBm) RF Characteristics Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1.0 A, POUT = 40 W average, ƒ1 = 760, ƒ2 = 770 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB at 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 18.5 — dB Drain Efficiency ηD — 32 — % ACPR — –36 — dBc Adjacent Channel Power Ratio All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 9 Rev. 03, 2009-11-11 PTFA071701E PTFA071701F Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 0.9 A, POUT = 150 W PEP, ƒ = 765 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 18.0 18.7 — dB Drain Efficiency ηD 44 46 — % Intermodulation Distortion IMD — –29.5 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 30 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.07 — Ω Operating Gate Voltage VDS = 30 V, IDQ = 1.0 A VGS 2.0 2.48 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 170 W CW) RθJC 0.38 °C/W Ordering Information Type and Version Package Type Package Description Shipping PTFA071701E V4 H-36248-2 Slotted flange, single-ended Tray PTFA071701E V4 R250 H-36248-2 Slotted flange, single-ended Tape & Reel 250 pcs PTFA071701F V4 H-37248-2 Earless flange, single-ended Tray PTFA071701F V4 R250 H-37248-2 Earless flange, single-ended Tape & Reel 250 pcs *See Infineon distributor for future availability. Data Sheet 2 of 9 Rev. 03, 2009-11-11 PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Broadband Performance VDD = 30 V, IDQ = 0.9 A, ƒ = 770 MHz VDD = 30 V, IDQ = 900 mA, POUT = 75 W 55 45 Gain 18 35 17 25 16 15 Efficiency 15 5 30 35 40 45 50 0 45 -5 Efficiency 40 -10 35 -15 Return Loss 30 -20 25 -25 Gain 20 15 700 55 730 Output Power (dBm) -35 790 760 Frequency (MHz) CW Performance at Selected Voltages Power Sweep IDQ = 0.9 A, ƒ = 770 MHz VDD = 30 V, ƒ = 770 MHz Gain 21 20 20 56 19 52 18 48 17 44 16 40 Efficiency V DD = 32 V V DD = 30 V V DD = 28 V Power Gain (dB) 60 21 Gain (dB) 64 Drain Efficiency (%) -30 50 51 52 18 17 IDQ = 0.9 A IDQ = 0.7 A 30 53 Output Power (dBm) Data Sheet 19 15 14 49 IDQ = 1.3 A IDQ = 1.1 A 16 15 36 48 Input Return Loss (dB) 20 50 Gain (dB), Efficiency (%) 65 Drain Efficiency (%) 21 19 Gain (dB) Power Sweep, CW Conditions 35 40 45 50 55 Output Power (dBm) 3 of 9 Rev. 03, 2009-11-11 PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Typical Performance (cont.) 2-Carrier WCDMA Performance Bias Voltage vs. Temperature VDD = 30 V, IDQ = 1.0 A, ƒ = 765 MHz Voltage normalized to typical gate voltage, series show current 70 -30 IM3 -35 40 -40 30 -45 20 -50 ACPR -55 Efficiency 0 44 46 14 A 0.97 48 0 - W AV E LE NGT H S T OW A Broadband Circuit Impedance D Z Load Z Source Ω 80 100 Z0 = 50 Ω 770 MHz 725 MHz S Z Load Ω MHz R jX R jX 725 2.690 –3.730 2.070 –1.27 736 2.680 –3.470 2.020 –1.08 748 2.700 –3.240 1.980 –0.84 759 2.720 –3.050 1.930 –0.64 770 2.690 –2.890 1.900 –0.46 Data Sheet 60 Z Load G Frequency 40 R Output Power (dBm) Z Source 20 Case Temperature (°C) 0.2 42 12.44 A 0.98 0.1 40 10.88 A 0.0 38 0.99 DT OW ARD LOA GT HS 36 9.32 A 4 of 9 0.1 Z Source E L EN 34 7.76 A 1.00 0.96 -20 -60 32 6.22 A 1.01 W AV <--- 10 ACPR (dBc) TCASE = 90°C 50 3.1 A 1.02 0 .1 Drain Efficiency (%) Normalized Bias Voltage (V) TCASE = 25°C 60 1.556 A 1.03 -25 0. 2 Rev. 03, 2009-11-11 PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Reference Circuit 0.001µF R2 1.3K V R1 1.2K V QQ1 LM7805 VDD Q1 BCP56 C2 0.001µF R3 2K V C3 0.001µF R4 2K V R6 5.1K V C4 0.1µF R5 2K V R7 10 V C5 10µF 35V L1 VDD R8 5.1K V C6 4.7µF C8 62pF C7 0.1µF l4 l1 l6 l3 C10 3.9pF l8 l5 C11 6.2pF C15 0.1µF C22 3.3pF DUT l2 C14 10µF 50V C13 2.2µF R9 10 V C9 62pF J1 C12 62pF l9 l10 C16 10µF 50V C24 62pF l11 l12 J2 C23 3.3pF l7 L2 C17 62pF C18 2.2µF C19 10µF 50V C20 0.1µF C21 10µF 50V Reference circuit schematic for ƒ = 770 MHz Circuit Assembly Information DUT PTFA071701E or PTFA071701F PCB 0.76 mm [.030"] thick, εr = 3.48 LDMOS Transistor Rogers RO4350 1 oz. copper Microstrip Dimensions: L x W ( mm) Dimensions: L x W (in.) l1 l2 l3 l4 l5 l6, l7 l8 l9 (taper) l10 (taper) l11 l12 Data Sheet Electrical Characteristics at 770 MHz 0.025 0.053 0.035 0.148 0.094 0.103 0.139 0.062 0.002 0.005 0.016 λ, 50.7 Ω λ, 38.4 Ω λ, 38.4 Ω λ, 76.7 Ω λ, 7.8 Ω λ, 44.5 Ω λ, 8.4 Ω λ, 8.4 Ω / 33.8 Ω λ, 33.8 Ω / 38.4 Ω λ, 38.4 Ω λ, 50.7 Ω 5.84 x 1.65 12.32 x 2.54 8.00 x 2.54 35.94 x 0.76 20.32 x 17.78 24.13 x 2.03 29.97 x 16.51 13.46 x 16.51 / 3.05 0.51 x 3.05 / 2.54 1.27 x 2.54 3.76 x 1.65 5 of 9 0.230 0.485 0.315 1.415 0.800 0.950 1.180 0.530 0.020 0.050 0.148 x 0.065 x 0.100 x 0.100 x 0.030 x 0.700 x 0.080 x 0.650 x 0.650 / 0.120 x 0.120 / 0.100 x 0.100 x 0.065 Rev. 03, 2009-11-11 PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Reference Circuit (cont.) C3 C2 C8 C7 C6 RF_IN R4 R7 R1 C1 R5 C5 R8 R3 C4 L1 QQ 1 R6 Q1 C12 R2 C13 C14 C15 C16 R9 C22 C24 RF_OUT C9 C10 C23 C11 C21 C17 C18 C19 C20 L2 a071701 ghl - v 1_cd _4- 15 - 09 Reference circuit assembly diagram* (not to scale) Component Description C1, C2, C3 Capacitor, 0.001 µF C4, C7, C15, C20 Capacitor, 0.1 µF C6 Capacitor, 4.7 µF, 16 V C5 Tantalum capacitor, 10 µF, 35 V C8, C9, C12, C17, C24 Ceramic capacitor, 62 pF C10 Ceramic capacitor, 3.9 pF C11 Ceramic capacitor, 6.2 pF C13, C18 Capacitor, 2.2 µF C14, C16, C19, C21 Tantalum capacitor, 10 µF, 50 V C22, C23 Ceramic capacitor, 3.3 pF L1, L2 Ferrite, 8.9 mm Q1 Transistor QQ1 Voltage regulator R1 Chip resistor, 1.2k Ω R2 Chip resistor, 1.3k Ω R3, R5 Chip resistor, 2k Ω R4 Potentiometer, 2k Ω R6, R8 Chip resistor, 5.1k Ω R7, R9 Chip resistor, 10 Ω *Gerber files for this circuit available on request Data Sheet Suggested Manufacturer P/N or Comment Digi-Key Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC Garrett Electronics ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key PCC1772CT-ND PCC104BCT-ND PCS3475CT-ND 399-1655-2-ND 100B 620 100B 3R9 100B 7R5 920C 202 TPSE106K050R0400 100B 3R3 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P5.1KECT-ND P10ECT-ND 6 of 9 Rev. 03, 2009-11-11 PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Package Outline Specifications Package H-36248-2 CL 45° X 2.720 [45° X .107] 4.826±0.510 [.190±0.020] D S FLANGE 9.779 LID 9.398+0.100 -0.150 [.385] +0.004 .370 19.431±0.510 -0.006 [.765±0.020] CL ] [ 2X R1.626 [R.064] G 4X R1.524 [R.060] 2X 12.700 [.500] 27.940 [1.100] 1.016 [.040] SPH 1.575 [.062] 19.812±0.200 [.780±0.008] 3.632±0.380 0.0381 [.0015] -A- C66065-A2322-C001-01-0027_h-36248-2_11-11-09 CL 34.036 [1.340] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [0.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate. 5. Lead thickness: 0.102 +0.051/–0.025 [0.004 +0.002/–0.001]. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max. Data Sheet 7 of 9 Rev. 03, 2009-11-11 PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-37248-2 [45° X .107] 4.826±0.510 [.190±0.020] 4X R0.508+.381 -.127 R.020+0.015 -0.005 D FLANGE 9.779 [.385] ] [ LID 9.398+0.100 -0.150 .370+0.004 -0.006 [ ] 19.431±0.510 [.765±0.020] G 2X 12.700 [.500] SPH 1.575 [.062] 19.812±0.200 [.780±0.008] 1.016 [.040] 0.0381 [.0015] -A- C66065-A2323-C001-01-0027_h-37248-2_11-11-09 CL 3.632±0.380 [.143±0.015] S 20.574 [.810] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [0.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate. 5. Lead thickness: 0.102 +0.051/–0.025 [0.004 +0.002/–0.001]. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 8 of 9 Rev. 03, 2009-11-11 PTFA071701E/F V4 Confidential, Limited Internal Distribution Revision History: 2009-11-11 Previous Version: 2009-09-09, Preliminary Data Sheet Page All Subjects (major changes since last revision) Data Sheet now relects released-product specifications 2 7,8 Updated maximun ratings Updated package outline Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2009-11-11 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 9 of 9 Rev. 03, 2009-11-11