HGTG40N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. • 100kHz Operation At 390V, 40A • 200kHz Operation At 390V, 20A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . . . .55ns at TJ = 125o • Low Conduction Loss Packaging JEDEC STYLE TO-247 E Formerly Developmental Type TA49347. C G Ordering Information PART NUMBER PACKAGE HGTG40N60A4 TO-247 BRAND 40N60A4 COLLECTOR NOTE: When ordering, use the entire part number. (BACK METAL) Symbol C G E FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2003 Fairchild Semiconductor Corporation HGTG40N60A4 Rev. B2 HGTG40N60A4 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG40N60A4 UNITS 600 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 75 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 63 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 300 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±30 V Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 200A at 600V Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 625 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 W/oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. Electrical Specifications TJ = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS V Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - Emitter to Collector Breakdown Voltage BVECS IC = -10mA, VGE = 0V 20 - - TJ = 25oC - - 250 µA TJ = 125oC - - 3.0 mA TJ = 25oC - 1.7 2.7 V TJ = 125oC - 1.5 2.0 V 4.5 5.6 7 V - - ±250 nA 200 - - A Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current ICES VCE(SAT) VGE(TH) IGES VCE = BVCES IC = 40A, VGE = 15V IC = 250µA, VCE = VGE VGE = ±20V Switching SOA SSOA TJ = 150oC, RG = 2.2Ω, VGE = 15V L = 100µH, VCE = 600V Gate to Emitter Plateau Voltage VGEP IC = 40A, VCE = 0.5 BVCES - 8.5 - V IC = 40A, VCE = 0.5 BVCES VGE = 15V - 350 405 nC VGE = 20V - 450 520 nC - 25 - ns - 18 - ns - 145 - ns - 35 - ns On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Qg(ON) td(ON)I trI td(OFF)I tfI IGBT and Diode at TJ = 25oC ICE = 40A VCE = 0.65 BVCES VGE = 15V RG = 2.2Ω L = 200µH Test Circuit (Figure 20) Turn-On Energy (Note 3) EON1 - 400 - µJ Turn-On Energy (Note 3) EON2 - 850 - µJ Turn-Off Energy (Note 2) EOFF - 370 - µJ ©2003 Fairchild Semiconductor Corporation HGTG40N60A4 Rev. B2 HGTG40N60A4 Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued) PARAMETER Current Turn-On Delay Time Current Rise Time SYMBOL td(ON)I trI Current Turn-Off Delay Time Current Fall Time td(OFF)I tfI TEST CONDITIONS MIN TYP MAX UNITS IGBT and Diode at TJ = 125oC ICE = 40A VCE = 0.65 BVCES VGE = 15V RG = 2.2Ω - 27 - ns - 20 - ns - 185 225 ns L = 200µH Test Circuit (Figure 20) - 55 95 ns Turn-On Energy (Note 3) EON1 - 400 - µJ Turn-On Energy (Note 3) EON2 - 1220 1400 µJ Turn-Off Energy (Note 2) EOFF - 700 800 µJ 0.2 oC/W Thermal Resistance Junction To Case - RθJC - NOTES: 2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20. Unless Otherwise Specified ICE , DC COLLECTOR CURRENT (A) 80 VGE = 15V 70 PACKAGE LIMITED 60 50 40 30 20 10 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE ©2003 Fairchild Semiconductor Corporation 150 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 225 TJ = 150oC, RG = 2.2Ω, VGE = 15V, L = 100µH 200 175 150 125 100 75 50 25 0 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGTG40N60A4 Rev. B2 HGTG40N60A4 Unless Otherwise Specified (Continued) TC 75oC 200 tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX, OPERATING FREQUENCY (kHz) 300 VGE 15V 100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.2oC/W, SEE NOTES RG = 2.2Ω, L = 200µH, VCE = 390V 10 3 10 40 12 1000 10 ISC 8 800 6 600 tSC 4 400 2 200 10 70 11 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 60 50 TJ = 125oC 40 30 TJ = 25oC 20 TJ = 150oC 10 0 0 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 80 60 50 TJ = 125oC 40 30 20 10 0 0 0.2 0.4 EOFF, TURN-OFF ENERGY LOSS (µJ) EON2 , TURN-ON ENERGY LOSS (µJ) TJ = 125oC, VGE = 12V, VGE = 15V 3500 3000 2500 2000 1500 1000 0 0 TJ = 25oC, VGE = 12V, VGE = 15V 10 20 30 40 50 60 70 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ©2003 Fairchild Semiconductor Corporation 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 1800 4500 500 TJ = 25oC TJ = 150oC FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE RG = 2.2Ω, L = 200µH, VCE = 390V 4000 16 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 5000 15 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs 70 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 5500 14 FIGURE 4. SHORT CIRCUIT WITHSTAND TIME DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250µs 70 13 12 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 80 1200 VCE = 390V, RG = 2.2Ω, TJ = 125oC ISC, PEAK SHORT CIRCUIT CURRENT (A) Typical Performance Curves 80 RG = 2.2Ω, L = 200µH, VCE = 390V 1600 1400 TJ = 125oC, VGE = 12V OR 15V 1200 1000 800 600 400 TJ = 25oC, VGE = 12V OR 15V 200 0 0 10 20 30 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT HGTG40N60A4 Rev. B2 HGTG40N60A4 Typical Performance Curves 120 RG = 2.2Ω, L = 200µH, VCE = 390V 40 TJ = 25oC, TJ = 125oC, VGE = 15V 38 36 34 32 30 28 26 TJ = 125oC, TJ = 25oC, VGE = 12V 80 60 40 20 24 22 RG = 2.2Ω, L = 200µH, VCE = 390V 100 trI , RISE TIME (ns) td(ON)I, TURN-ON DELAY TIME (ns) 42 Unless Otherwise Specified (Continued) TJ = 25oC, TJ = 125oC, VGE = 15V 0 10 20 30 40 50 60 70 TJ = 25oC, TJ = 125oC, VGE = 15V 0 80 0 10 20 30 40 50 60 70 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 70 RG = 2.2Ω, L = 200µH, VCE = 390V 180 170 VGE = 12V, VGE = 15V, TJ = 125oC 160 150 TJ = 125oC, VGE = 12V OR 15V 60 55 50 45 40 VGE = 12V OR 15V, TJ = 25oC 140 130 RG = 2.2Ω, L = 200µH, VCE = 390V 65 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 190 TJ = 25oC, VGE = 12V OR 15V 35 30 0 10 20 30 40 50 60 70 80 0 10 ICE , COLLECTOR TO EMITTER CURRENT (A) 16 VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250µs 300 250 200 TJ = -55oC 150 30 40 50 60 70 80 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT 400 350 20 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) 80 TJ = 125oC TJ = 25oC 100 50 IG(REF) = 1mA, RL = 7.5Ω, TC = 25oC 14 12 VCE = 600V VCE = 400V 10 8 VCE = 200V 6 4 2 0 0 6 7 8 9 10 VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC ©2003 Fairchild Semiconductor Corporation 11 0 50 100 150 200 250 300 350 400 QG , GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS HGTG40N60A4 Rev. B2 HGTG40N60A4 6 Unless Otherwise Specified (Continued) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) Typical Performance Curves TJ = 125oC, L = 200µH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 5 ICE = 80A 4 3 2 ICE = 40A 1 ICE = 20A 0 50 25 75 100 125 TC , CASE TEMPERATURE (oC) 150 FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE VCE, COLLECTOR TO EMITTER VOLTAGE (V) FREQUENCY = 1MHz C, CAPACITANCE (nF) 12 10 CIES 6 4 COES 2 CRES 0 0 10 20 30 40 50 60 70 TJ = 125oC, L = 200µH VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 10 ICE = 80A ICE = 40A 1 ICE = 20A 0.1 1 10 100 RG, GATE RESISTANCE (Ω) 80 90 100 2.4 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs, TJ = 25oC 2.3 2.2 ICE = 80A 2.1 ICE = 40A 2.0 ICE = 20A 1.9 8 9 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 12 11 13 14 15 16 VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE 500 FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE 14 8 100 FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE 100 0.50 0.20 t1 0.10 10-1 PD t2 0.05 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.02 0.01 SINGLE PULSE 10-2 -5 10 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 19. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE ©2003 Fairchild Semiconductor Corporation HGTG40N60A4 Rev. B2 HGTG40N60A4 Test Circuit and Waveforms HGT1Y40N60A4D 90% 10% VGE EON2 EOFF L = 200µH VCE RG = 2.2Ω 90% + - ICE VDD = 390V 10% td(OFF)I tfI trI td(ON)I FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2003 Fairchild Semiconductor Corporation fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 21. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). HGTG40N60A4 Rev. B2 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FRFET™ CoolFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ EnSigna™ ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5