SMG2306 5.3A, 20V,RDS(ON) 32mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description SC-59 A The SMG2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. L S 2 The SOT-23 package is universally used for all 3 Top View B 1 commercial-industrial applications D G Features J C * Capable of 2.5V gate drive * Lower on-resistance K H * Reliable and Rugged Drain Gate Applications Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm D Source Dim * Power Management in Notebook Computer * Protable Equipment * Battery Powered System G Marking : 2306 S Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS 3 o Continuous Drain Current, [email protected] ID@TA=25 C 3 o Continuous Drain Current, [email protected] ID@TA=70 C Pulsed Drain Current IDM o PD@TA=25 C Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Ratings Unit 20 V ±12 V 5.3 A 4.3 A 10 A 1.38 W 0.01 W / oC o C -55~+150 Thermal Data Parameter Thermal Resistance Junction-ambient http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Symbol 3 Rthj-a Ratings 90 Unit o C /W Any changing of specification will not be informed individual Page 1 of 4 SMG2306 5.3A, 20V,RDS(ON) 32mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente o Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 oC) Drain-Source Leakage Current (Tj=70 oC) Static Drain-Source On-Resistance 2 Symbol Min. Typ. Max. Unit BVDSS 20 _ _ V BVDS/ Tj _ 0.1 _ V/ oC VGS(th) 0.5 _ 1.2 V VDS=VGS, ID=250uA IGSS _ _ ±100 nA VGS=± 12V _ _ 1 uA VDS=20V,VGS=0 _ _ 10 uA VDS=16V,VGS=0 _ _ 30 _ _ 35 IDSS RDS(ON) _ _ 90 VGS=1.8V, ID=1A _ 1.5 Gate-Drain ("Miller") Charge Qgd _ 3.6 _ 6 _ 14 _ Rise Time Tr Turn-off Delay Time Fall Time Input Capacitance Output Capacitance _ _ 8.7 Td(Off) _ Tf _ 2.8 _ 603 Ciss Coss VGS=4.5V, ID=5.3A mΩ VGS=2.5V, ID=2.6A Qgs Td(ON) VGS=10V, ID=5.5A 50 Gate-Source Charge Turn-on Delay Time 2 o Reference to 25 C,ID=1mA _ _ 2 VGS=0V, ID=250uA _ Qg Total Gate Charge Test Condition _ 18.4 _ _ _ nC ID=5.3A VDS=10V VGS=4.5V VDS=15V ID=1A nS VGS=10V RG=2 Ω RD=15Ω _ _ 144 _ 111 _ pF VGS=0V VDS=15V f=1.0MHz Crss _ Gfs _ 13 _ S Symbol Min. Typ. Max. Unit Test Condition Forward On Voltage 2 VSD _ _ 1.2 V IS=1.2A, VGS=0V. Reverse Recovery Time Trr _ 16.8 _ nS Reverse Recovery Charge Qrr _ 11 _ nC Reverse Transfer Capacitance Forward Transconductance VDS=5V, ID=5.3A Source-Drain Diode Parameter Is=5A,VGS=0V dl/dt=100A/uS Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width≦300us, dutycycle≦2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 SMG2306 Elektronische Bauelemente 5.3A, 20V,R DS(ON) 32m Ω N-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 4 SMG2306 Elektronische Bauelemente http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A 5.3A, 20V,RDS(ON) 32mΩ N-Channel Enhancement Mode Power Mos.FET Any changing of specification will not be informed individual Page 4 of 4