SUP/SUB75N08-10 Vishay Siliconix N-Channel 75-V (D-S), 175C MOSFET V(BR)DSS (V) rDS(on) () ID (A) 75 0.010 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N08-10 Top View SUP75N08-10 N-Channel MOSFET Parameter Gate-Source Voltage TC = 25C Continuous Drain Current (TJ = 175C) TC = 125C Symbol Limit Unit VGS 20 V 75a ID 55 A Pulsed Drain Current IDM 240 Avalanche Current IAR 60 Repetitive Avalanche Energyb L = 0.1 mH TC = 25C (TO-220AB and TO-263) Power Dissipation TA = 25C (TO-263)d Operating Junction and Storage Temperature Range EAR 280 mJ 187c PD W 3.7 TJ, Tstg –55 to 175 C Symbol Limit Unit Parameter PCB Mount (TO-263)d Junction to Ambient Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case 40 RthJA hJA RthJC 62.5 C/W 0.8 Notes a. Package limited. b. Duty cycle 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 70263 S-57253—Rev. B, 24-Feb-98 www.vishay.com FaxBack 408-970-5600 2-1 SUP/SUB75N08-10 Vishay Siliconix Specifications (TJ = 25C Unless Otherwise Noted) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 75 VGS(th) VDS = VGS, ID = 250 mA 2.0 3.5 4.5 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 75 V, VGS = 0 V 1 VDS = 75 V, VGS = 0 V, TJ = 125C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Z Zero Gate G Voltage V l Drain D i Current C IDSS On-State Drain Currenta ID(on) V VDS = 75 V, VGS = 0 V, TJ = 175C VDS = 5 V, VGS = 10 V rDS(on) A 0.0087 VGS = 10 V, ID = 30 A, TJ = 125C gfs VDS = 15 V, ID = 30 A 0.010 0.017 VGS = 10 V, ID = 30 A, TJ = 175C Forward Transconductancea mA A 150 120 VGS = 10 V, ID = 30 A a D i S O S R i Drain-Source On-State Resistance nA W 0.021 30 S Dynamicb Input Capacitance Ciss Output Capacitance Coss 4800 Reverse Transfer Capacitance Crss 270 Total Gate Chargec Qg 85 VGS = 0 V, V VDS = 25 V V, f = 1 MH MHz pF F 910 120 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd 24 Turn-On Delay Timec td(on) 20 40 95 200 65 120 20 60 Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) VDS = 30 V, VGS = 10 V, V ID = 75 A VDD = 30 V V,, RL = 0 0.47 47 W ID ^ 75 A, A VGEN = 10 V V, RG = 2 2.5 5W tf nC C 31 ns Source-Drain Diode Ratings and Characteristics (TC = 25C)b Continuous Current IS 75 Pulsed Current ISM 240 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge A IF = 75 A , VGS = 0 V trr IRM(REC) Qrr IF = 75 A, A di/dt di/d = 100 A/ms A/ 1.0 1.3 V 80 120 ns 7 9 A 0.28 0.54 mC Notes a. Pulse test: pulse width v 300 msec, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70263 S-57253—Rev. B, 24-Feb-98 SUP/SUB75N08-10 Vishay Siliconix Output Characteristics Transfer Characteristics 250 200 VGS = 10 V 9V 8V 7V 150 I D – Drain Current (A) I D – Drain Current (A) 200 150 100 6V 50 4V 100 50 TC = 125C 25C 5V –55C 0 0 0 2 4 6 8 10 0 2 VDS – Drain-to-Source Voltage (V) Transconductance 8 On-Resistance vs. Drain Current 0.012 TC = –55C 100 0.010 r DS(on) – On-Resistance ( Ω ) 25C 80 125C 60 40 20 0 VGS = 10 V 0.008 VGS = 20 V 0.006 0.004 0.002 0 0 20 40 60 80 100 0 20 40 VGS – Gate-to-Source Voltage (V) 60 80 100 ID – Drain Current (A) Capacitance Gate Charge 7000 20 V GS – Gate-to-Source Voltage (V) 6000 C – Capacitance (pF) 6 VGS – Gate-to-Source Voltage (V) 120 g fs – Transconductance (S) 4 Ciss 5000 4000 3000 2000 Coss Crss 1000 0 VDS = 30 V ID = 75 A 16 12 8 4 0 0 10 20 30 40 50 VDS – Drain-to-Source Voltage (V) Document Number: 70263 S-57253—Rev. B, 24-Feb-98 60 0 25 50 75 100 125 150 175 Qg – Total Gate Charge (nC) www.vishay.com FaxBack 408-970-5600 2-3 SUP/SUB75N08-10 Vishay Siliconix On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 TJ = 150C I S – Source Current (A) r DS(on) – On-Resistance ( Ω ) (Normalized) VGS = 10 V ID = 30 A 1.5 1.0 TJ = 25C 10 0.5 0 –50 1 –25 0 25 50 75 100 125 TJ – Junction Temperature (C) 150 175 0.3 0.6 0.9 1.2 VSD – Source-to-Drain Voltage (V) 1.5 Maximum Avalanche and Drain Current vs. Case Temperature 100 Limited by rDS(on) 100 I D – Drain Current (A) 80 I D – Drain Current (A) Safe Operating Area 500 60 40 10 ms 100 ms 10 1 ms 10 ms 1 100 ms dc TC = 25C Single Pulse 20 0 0 25 50 75 100 125 150 175 0.1 0.1 TC – Case Temperature (C) 1 10 VDS – Drain-to-Source Voltage (V) 100 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 www.vishay.com FaxBack 408-970-5600 2-4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 3 Document Number: 70263 S-57253—Rev. B, 24-Feb-98