KEXIN 2SC4505

Transistors
SMD Type
NPN Epitaxial Planar Silicon Transistors
2SC4505
Features
High breakdown voltage. (BVCEO = 400V)
Low saturation voltage,
typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA.
High switching speed, typically tf = 1.7ìs at Ic =100mA.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
collector-base voltage
VCBO
400
V
collector-emitter voltage
VCEO
400
V
emitter-base voltage
VEBO
7
V
collector current
CollectorPower Dissipation
IC
PC
0.1
A
0.2
A *1
0.5
W *2
2
W
Junotion Temperature
TJ
150
storage Temperature
Tstg
-55 to 150
*1 Single pulse pw=20ms,Duty=1/2
*2 When mounted on a 40X40X0.7 mm ceramic board.
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1
Transistors
SMD Type
2SC4505
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=50ìA
400
Collector-emitter breakdown voltage
BVCEO
IC=1mA
400
V
Emitter-base breakdown voltage
BVEBO
IE=50ìA
7
V
V
Collector cutoff current
ICBO
VCB=400V
10
ìA
Emitter cutoff current
IEBO
VEB=6V
10
ìA
0.5
V
1.5
V
Collector-emitter saturation voltage
VCE(sat)
IC/IB=10mA/1mA
Base-emitter saturation voltage
VBE(sat)
IC/IB=10mA/1mA
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Turn-on time
Storage time
Fall time
TYPE
CEP
CEQ
Rank
P
Q
Marking
82 to 180
120 to 270
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VCE=10V , IC=10mA
0.05
82
270
VCE=10V , IE=-10mA , f=10MHz
20
MHz
Cob
VCB=10V , IE=0A , f=1MHz
7
pF
ton
IC=-100mA RL=1.5kÙ
1
µs
tstg
IB1=-IB2=10mA
5.5
µs
VCC=-150V
1.7
µs
tf
hFE Classification
2
Testconditons