Transistors SMD Type Power Transistor 2SD2211 Features High breakdown voltage.(BVCEO = 160V) Low collector output capacitance. (Typ. 20pF at VCB = 10V) High transition frequency.(fT = 80MHZ) Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO 160 V Collector to emitter voltage VCEO 160 V Emitter to base voltage VEBO 5 V Collector current IC 1.5 A(DC) Collector current IC 3 A(Pulse)*1 Collector power dissipation PC 0.5 W 2*2 W Junction temperature Tj 150 Storage temperature Tstg -55 to 150 *1 Pw=200msec duty=1/2 *2 When mounted on a 40 X 40 X 0.7mm ceramic board. www.kexin.com.cn 1 Transistors SMD Type 2SD2211 Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit V(BR)CBO IC = 50ìA 160 V Collector to emitter breakdown voltage V(BR)CEO IC = 1mA 160 V Emitter to base breakdown voltage V(BR)EBO IE = 50ìA 5 V Collector cutoff current ICBO VCB = 120V 1 ìA Emitter cutoff current IEBO VEB = 4V 1 ìA 2 V 1.5 V Collector-emitter saturation voltage VCE(sat) IC/IB = 1A/0.1A Base-emitter saturation voltage VBE(sat) IC/IB = 1A/0.1A DC current transfer ratio hFE Transition frequency fT Output capacitance Cob hFE Classification 2 Testconditons Collector to base breakdown voltage Marking DQQ DQR Rank Q R hFE 120 270 180 390 www.kexin.com.cn VCE/IC = 5V/0.1A 120 390 VCE = 5V , IE = -0.1A , f = 30MHz 80 MHz VCB = 10V , IE = 0A , f = 1MHz 20 pF