2SB1 1 8 8 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES z 2. COLLECTOR1 Low VCE(sat). z 2 Complements the 2SD1766 3 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -2 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50μA , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA, IC=0 -5 V Collector cut-off current ICBO VCB=-20 V , IE=0 -1 μA Emitter cut-off current IEBO VEB=-4 V , -1 μA DC current gain * hFE VCE=-3V, Collector-emitter saturation voltage * VCE(sat) fT Transition frequency Cob Output capacitance IC=0 IC= -0.5A 82 390 IC=-2A, IB= -0.2A -0.8 VCE=-5V, IC=-0.5A ,f=30MHz 100 MHz VCB=-10V, IE=0 ,f=1MHz 50 pF * Measured using pulse current. CLASSIFICATION Rank Range Marking OF hFE P Q R 82-180 120-270 180-390 BCP BCQ BCR １ JinYu semiconductor V www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SB1 1 8 8 Typical Characteristics ２ JinYu www.htsemi.com