Inchange Semiconductor Product Specification 2SC1398 2SC1398A Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·2SC1398 is complement to type 2SA748 ·Large collector power dissipation APPLICATIONS ·For medium power amplifier applicattions PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage CONDITIONS Open emitter 2SC1398 Emitter-base voltage UNIT 70 V 50 Open base 2SC1398A VEBO VALUE V 70 Open collector 5 V IC Collector current 2 A ICM Collector current-peak 3 A PC Collector power dissipation 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1398 2SC1398A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC1398 V(BR)CEO TYP. MAX UNIT 50 Collector-emitter breakdown voltage IC=10mA ,IB=0 2SC1398A V 70 V(BR)CBO Collector-base breakdown voltage IC=1mA ,IE=0 VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 0.6 1.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.2A 1.0 1.5 V ICBO Collector cut-off current VCB=40V; IE=0 1 μA ICEO Collector cut-off current VCE=20V; IC=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 2SC1398 hFE-2 DC current gain fT 70 V 30 50 220 50 160 IC=1A ; VCE=5V 2SC1398A MIN Transition frequency IC=0.5A ; VCE=5V hFE-2 Classifications Type No. P Q R 2SC1398 50-100 80-160 120-220 2SC1398A 50-100 80-160 2 120 MHz Inchange Semiconductor Product Specification 2SC1398 2SC1398A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3