isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4371 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400(Min) ·Excellent Switching Times: tr= 1.0μs(Max), tf= 1.0μs(Max)@ IC= 4A APPLICATIONS ·Switching regulator application ·High voltage switching application ·High Speed DC-DC converter application ·Fluorescent light ballastor application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 7 A Base Current-Continuous 1 A Collector Power Dissipation @Ta=25℃ 2 IB B PC TJ Tstg W Collector Power Dissipation @TC=25℃ 30 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4371 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 500 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V ICBO Collector Cutoff Current VCB= 400V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1 mA hFE-1 DC Current Gain IC= 3A ; VCE= 5V 12 hFE-2 DC Gurrent Gain IC= 5A ; VCE= 5V 8 1.0 μs 2.5 μs 1.0 μs B B TYP. MAX UNIT Switching times tr tstg tf Rise Time Storage Time IB1= -IB2= 0.4A; VCC≈200V RL= 50Ω;PW=20μs Duty≤1% Fall Time isc Website：www.iscsemi.cn 2