MMBTA42 TRANSISTOR(NPN) FEATURES z High breakdown voltage z Low collector-emitter saturation voltage z Complementary to MMBTA92 (PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Marking: 1D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.3 A PC Collector Power dissipation 0.35 W RӨJA Thermal Resistance, junction to Ambient 357 ℃/mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 Collector cut-off current ICBO VCB=200V, IE=0 0.25 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE= 10V, IC= 1mA 60 hFE(2) VCE= 10V, IC=10mA 100 hFE(3) VCE=10V, IC=30mA 60 Collector-emitter saturation voltage VCE(sat) IC=20mA, IB= 2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC= 20mA, IB=2mA 0.9 V DC current gain Transition frequency fT IE=0 MIN VCE= 20V, IC= 10mA, f=30MHz 300 V 300 V 5 V 200 50 MHz １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBTA42 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBTA42 ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５