SHENZHENFREESCALE AO4940

AO4940
Asymmetric Dual N-Channel MOSFET
General Description
The AO4940 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A
monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further.
Features
FET1
VDS (V) = 30V
ID = 9.1A
RDS(ON) < 15mΩ
RDS(ON) < 23mΩ
FET2
VDS(V) = 30V
ID=7.8A
(VGS = 10V)
< 21mΩ
(VGS = 10V)
< 32mΩ
(VGS = 4.5V)
D1
Top View
D2
D2
G1
S1
1
2
3
4
8
7
6
5
D2
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
G2
S2/D1
S2/D1
S2/D1
G1
G2
S1
S2
FET2
FET1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Max FET1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
10 sec
TA=70°C
B
IDSM
Max FET2
10 sec
30
Steady-State
30
±20
VGS
TA=25°C
Continuous Drain
Current AF
Steady-State
±20
Units
V
V
9.1
7.6
7.8
6.5
7.3
6.1
6.3
5.2
A
A
IDM
100
64
Avalanche Current B
IAR
17
9
A
Repetitive avalanche energy L=0.3mH B
EAR
43
12
mJ
Pulsed Drain Current
TA=25°C
A
Power Dissipation
TA=70°C
PDSM
2
1.4
2
1.4
1.3
0.9
1.3
0.9
-55 to 150
-55 to 150
°C
Thermal Characteristics FET1(Intergrated Schottky Diode)
Parameter
Symbol
A t ≤ 10s
Maximum Junction-to-Ambient
RθJA
Maximum Junction-to-Ambient A Steady-State
C
Steady-State
RθJL
Maximum Junction-to-Lead
Typ
48
74
32
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Thermal Characteristics FET2
Parameter
Symbol
Maximum Junction-to-Ambient A t ≤ 10s
RθJA
Maximum Junction-to-Ambient A Steady-State
Steady-State
RθJL
Maximum Junction-to-Lead C
Typ
48
74
32
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Junction and Storage Temperature Range
1/7
TJ, TSTG
W
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AO4940
Asymmetric Dual N-Channel MOSFET
FET1(Intergrated Schottky Diode) Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
1.3
VGS=10V, VDS=5V
100
TJ=125°C
VGS=10V, ID=9.1A
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=7.3A
gFS
Forward Transconductance
VDS=5V, ID=9.1A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
10
VGS=0V, VDS=0V, f=1MHz
0.1
µA
2.5
V
12.5
15
18
22
18.5
23
mΩ
0.5
V
3
A
A
26
1100
pF
91
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
15.3
20
Qg(4.5V) Total Gate Charge
7.8
10
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=9.1A, dI/dt=300A/µs
VGS=10V, VDS=15V,RL=1.65Ω,
RGEN=3Ω
IF=9.1A, dI/dt=300A/µs
pF
225
3.0
Qgs
mΩ
S
0.43
1.7
VGS=10V, VDS=15V, ID=9.1A
mA
1.65
903
VGS=0V, VDS=15V, f=1MHz
Units
V
0.1
Zero Gate Voltage Drain Current
RDS(ON)
Max
30
VDS=30V, VGS=0V
IDSS
ID(ON)
Typ
Ω
nC
2.0
nC
3.9
nC
5.0
ns
9.2
ns
17.8
ns
4.4
ns
17
20
30.0
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s thermal resistance rating.
Rev2: Jun. 2011
2/7
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AO4940
Asymmetric Dual N-Channel MOSFET
FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
30
10V
80
VDS=5V
25
6V
20
4.5V
ID(A)
ID (A)
60
40
15
4V
10
125°C
20
VGS=3V
0
0
0
DYNAMIC
1
2
3
4
1
5
4
5
Normalized On-Resistance
1.8
VGS=4.5V
15
10
VGS=10V
5
ID=9.1A
VGS=10V
1.6
1.4
ID=7.3A
VGS=4.5V
1.2
1
0.8
0
5
10
15
20
25
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
60
90
120
150
180
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
45
1.0E+02
40
1.0E+01
ID=9.1A
35
125°C
1.0E+00
30
IS (A)
RDS(ON) (mΩ
Ω)
3
VGS(Volts)
Figure 2: Transfer Characteristics
20
125°C
25
1.0E-02
15
1.0E-03
25°C
1.0E-04
5
2
4
6
25°C
1.0E-01
20
10
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3/7
2
VDS (Volts)
PARAMETERS
Figure 1: On-Region Characteristics
25
RDS(ON) (mΩ
Ω)
25°C
5
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4940
Asymmetric Dual N-Channel MOSFET
FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
10
VDS=15V
ID=9.1A
1200
6
4
Ciss
1000
Capacitance (pF)
VGS (Volts)
8
800
600
400
Coss
2
Crss
200
0
0
0
5
10
15
20
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
DYNAMIC PARAMETERS
1000.0
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
100
100.0
TJ(Max)=150°C
TA=25°C
80
RDS(ON)
limited
10.0
10µs
100µs
1ms
10ms
0.1s
1.0
TJ(Max)=150°C
TA=25°C
0.1
DC
1s
10s
Power (W)
ID (Amps)
5
60
40
20
0.0
0.01
0.1
1
VDS (Volts)
10
0
100
0.0001
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure10: Single Pulse Power Rating Junction-toAmbient (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
PD
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
4/7
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AO4940
Asymmetric Dual N-Channel MOSFET
FET2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
5
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
64
VGS=10V, ID=7.8A
TJ=125°C
VGS=4.5V, ID=6A
gFS
Forward Transconductance
VDS=5V, ID=7.8A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
µA
±100
nA
2.1
2.6
V
16.5
21
24
31
23.7
32
mΩ
1
V
2.4
A
448
pF
A
20
mΩ
S
0.75
373
VGS=0V, VDS=15V, f=1MHz
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IGSS
RDS(ON)
Typ
67
pF
41
pF
Ω
1.8
2.8
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
7.2
11
Qg(4.5V) Total Gate Charge
3.5
nC
1.3
nC
1.7
nC
4.5
ns
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=15V, ID=7.8A
nC
VGS=10V, VDS=15V, RL=1.9Ω,
RGEN=3Ω
2.7
ns
14.9
ns
IF=7.8A, dI/dt=100A/µs
10.5
Body Diode Reverse Recovery Charge IF=7.8A, dI/dt=100A/µs
4.5
Body Diode Reverse Recovery Time
2.9
ns
12.6
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s thermal resistance rating.
Rev2: Jun. 2011
5/7
www.freescale.net.cn
AO4940
Asymmetric Dual N-Channel MOSFET
FET2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
15
10V
6V
VDS=5V
50
VDS=5V
12
9
4.5V
ID(A)
ID (A)
40
30
125°C
6
20
VGS=3.5V
125°C
25°C
3
10
0
25°
0
0
1
2
3
4
5
1.5
VDS (Volts)
Fig 1: On-Region Characteristics
3
3.5
4
4.5
Normalized On-Resistance
1.8
35
RDS(ON) (mΩ
Ω)
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
40
VGS=4.5V
30
VGS=4.5V
25
VGS=10V
20
15
VGS=10V
10
VGS=10V
1.6
1.4
VGS=4.5V
1.2
1
0.8
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
60
ID=7.5A
ID=8A
1.0E+00
50
1.0E-01
40
125°C
125°
IS (A)
RDS(ON) (mΩ
Ω)
2
125°C
1.0E-02
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES
AS CRITICAL
25°C
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF20
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
25°C
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
25°C
10
1.0E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
6/7
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AO4940
Asymmetric Dual N-Channel MOSFET
600
10
VDS=15V
ID=8A
500
VDS=15V
ID=7.5A
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
400
300
Coss
200
Coss
100
0
Crss
Crss
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
0
100.0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
50
10µs
1.0
1ms
10ms
TJ(Max)=150°C
TA=25°C
0.1s
DC
10s
1s
10s
0.0
0.01
0.1
1
VDS (Volts)
10
100
Power (W)
ID (Amps)
100µs
0.1
TJ(Max)=150°C
TA=25°C
40
RDS(ON)
limited
10.0
30
20
10
0
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
T
0.01
0.00001
7/7
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
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