A-POWER AP28G40GEO

AP28G40GEO
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
▼ High Input Impedance
▼ High Peak Current Capability
C
C
C
VCE
400V
ICP
150A
C
▼ Low Gate Drive
▼ Strobe Flash Applications
TSSOP-8
E
E
E
C
G
G
E
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VCE
Collector-Emitter Voltage
400
V
VGEP
Peak Gate-Emitter Voltage
±6
V
Pulsed Collector Current, V GE @ 2.5V
150
A
Maximum Power Dissipation
1
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
150
℃
ICP
[email protected]=25℃
1
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGE=± 6V, VCE=0V
Min.
Typ.
Max.
Units
-
-
±10
uA
-
-
10
uA
-
5.2
9
V
0.3
-
1.2
V
IGES
Gate-Emitter Leakage Current
ICES
Collector-Emitter Leakage Current VCE=400V, VGE=0V
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=2.5V, ICP=150A (Pulsed)
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
Qg
Total Gate Charge
IC=40A
-
76
130
nC
Qge
Gate-Emitter Charge
VCE=200V
-
4
-
nC
Qgc
Gate-Collector Charge
VGE=4V
-
26
-
nC
td(on)
Turn-on Delay Time
VCC=320V
-
220
-
ns
tr
Rise Time
IC=160A
-
800
-
ns
td(off)
Turn-off Delay Time
RG=10Ω
-
1.6
-
µs
tf
Fall Time
VGE=4V
-
1.5
-
µs
Cies
Input Capacitance
VGE=0V
-
4485
8240
pF
Coes
Output Capacitance
VCE=30V
-
44
-
pF
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
-
-
125
℃/W
Cres
RthJA
1
Thermal Resistance Junction-Ambient
Notes:
2
1.Surface mounted on 1 in copper pad of FR4 board, t=10s.
Data and specifications subject to change without notice
1
200805306
AP28G40GEO
80
160
o
T A =25 C
60
IC , Collector Current (A)
IC , Collector Current (A)
120
5.0 V
4. 5 V
3.5 V
3 .0V
V G = 2.5 V
T A = 150 o C
5.0V
4.5V
3.5V
3.0V
V G =2.5V
80
40
0
40
20
0
0
2
4
6
8
0
2
4
6
8
V CE , Collector-Emitter Voltage (V)
V CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
6
240
V CE =6.0V
V GE =4.0V
VCE(sat) ,Saturation Voltage(V)
200
IC , Collector Current(A)
o
T A =25 C
160
o
T A =150 C
120
80
40
0
5
I C =90A
4
I C =60A
3
2
I C =20A
1
0
1
2
3
4
5
6
0
20
40
60
80
120
140
160
o
V GE , Gate-Emitter Voltage (V)
Fig 3. Collector Current v.s.
Gate-Emitter Voltage
Fig 4. Collector- Emitter Saturation Voltage
v.s. Junction Temperature
6
8
o
T A =25 C
T A =150 o C
VCE ,Collector-Emitter Voltage(V)
VCE ,Collector-Emitter Voltage(V)
100
Junction Temperature ( C)
5
4
I C = 120A
3
I C =80A
2
I C =40A
1
7
6
I C =80A
5
I C =60A
4
I C =40A
3
2
0
1
2
3
4
V GE , Gate-Emitter Voltage(V)
Fig 5. Collector Current v.s.
Gate-Emitter Voltage
5
6
0
1
2
3
4
5
6
V GE , Gate-Emitter Voltage(V)
Fig 6. Collector Current v.s.
Gate-Emitter Voltage
2
AP28G40GEO
f=1.0MHz
10000
160
T C =70 o C
ICP , Peak Collector Current (A)
Cies
C (pF)
1000
100
Coes
Cres
10
120
80
40
0
1
5
9
13
17
21
25
29
33
37
0
2
4
6
8
V GE , Gate-to-Emitter Voltage (V)
V CE , Collector-Emitter Voltage (V))
Fig 7. Typical Capacitance Characterisitics
Fig 8. Maximum Pulse Collector Current
VCE
90%
RC
TO THE
OSCILLOSCOPE
C VCE
G
RG
VCC=320 V
10%
E
VGE
+
-
4V
VGE
td(on) tr
Fig 9. Switching Time Test Circuit
td(off) tf
Fig 10. Switching Time Waveform
VCE
TO THE
C
OSCILLOSCOPE
G
VCC=200V
VGE
E
+
1~3mA
-
IG
IC
VGE , Gate -Emitter Voltage (V)
6
I CP =40A
V CE =200V
5
4
3
2
1
0
0
20
40
60
80
100
120
Q G , Gate Charge (nC)
Fig 11. Gate Charge Test Circuit
Fig 12. Gate Charge Waveform
3
AP28G40GEO
dV/dt Design Notice
You should be design dV/dt value is below 400V/us, R G=30Ω when IGBT
turn off.
Definition of dV/dt
The slope of VCE from 30V to 90V
dv/dt = (90V-30V) / δt)
= 60V / δt
Waveform
IC (begin)
VCE
IC (end)
0V, 0A
dV/dt period
VCE
90V
30V
δt
Caution on Usage
This product is senstive to electrostatic discharge, please handle with caution.
4