A-POWER AP28G40GEM-HF

AP28G40GEM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
▼ High Input Impedance
C
C
▼ High Peak Current Capability
C
C
▼ Low Gate Drive
▼ Strobe Flash Applications
VCE
400V
ICP
150A
G
▼ RoHS Compliant & Halogen-Free
SO-8
E
E
C
E
G
E
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VCE
Collector-Emitter Voltage
400
V
VGEP
Peak Gate-Emitter Voltage
+6
V
Pulsed Collector Current, V GE @ 3V
150
A
Maximum Power Dissipation
1
W
Storage Temperature Range
-55 to 150
o
C
150
o
C
ICP
[email protected]=25℃
TSTG
TJ
1
Operating Junction Temperature Range
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGE=+6V, VCE=0V
Min.
Typ.
Max.
Units
-
-
+30
uA
-
-
25
uA
-
3.6
9
V
0.3
-
1.2
V
IGES
Gate-Emitter Leakage Current
ICES
Collector-Emitter Leakage Current VCE=400V, VGE=0V
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=3V, ICP=150A (Pulsed)
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
Qg
Total Gate Charge
IC=40A
-
86
138
nC
Qge
Gate-Emitter Charge
VCE=200V
-
2
-
nC
Qgc
Gate-Collector Charge
VGE=4V
-
23
-
nC
td(on)
Turn-on Delay Time
VCC=320V
-
220
-
ns
tr
Rise Time
IC=160A
-
800
-
ns
td(off)
Turn-off Delay Time
RG=10Ω
-
1.6
-
µs
tf
Fall Time
VGE=4V
-
1.5
-
µs
Cies
Input Capacitance
VGE=0V
-
5100
8160
pF
Coes
Output Capacitance
VCE=30V
-
38
-
pF
Reverse Transfer Capacitance
f=1.0MHz
-
27
-
Cres
RthJA
1
Thermal Resistance Junction-Ambient
-
-
pF
125
o
C/W
Notes:
1.Surface mounted on Min. copper pad of FR4 board.
Data and specifications subject to change without notice
1
201212131
AP28G40GEM-HF
160
160
IC , Collector Current (A)
IC , Collector Current (A)
120
5.0V
4.0V
3.0V
2.5V
T A = 150 o C
5.0V
4.0V
3.0V
2.5V
V G =2.0V
o
T A =25 C
80
40
120
V G = 2.0V
80
40
0
0
0
2
4
6
8
0
2
4
6
8
V CE , Collector-Emitter Voltage (V)
V CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
6
V CE = 3 V
V GE =3V
100
VCE(sat) ,Saturation Voltage(V)
IC , Collector Current(A)
5
T A =150 o C
o
T A =25 C
80
60
40
20
0
I C =150A
4
3
I C =90A
I C =75A
I C =60A
2
1
0
1
2
3
4
5
6
0
20
40
V GE , Gate-Emitter Voltage (V)
60
Fig 3. Transfer Characteristics
100
120
140
160
Fig 4. Collector- Emitter Saturation Voltage
v.s. Junction Temperature
6
8
o
T A =25 C
T A =150 o C
VCE ,Collector-Emitter Voltage(V)
VCE ,Collector-Emitter Voltage(V)
80
Junction Temperature ( o C)
5
4
I C = 150A
3
6
I C =150A
4
I C =90A
I C =75A
2
I C =90A
I C =75A
2
0
0
1
2
3
4
V GE , Gate-Emitter Voltage(V)
Fig 5. Collector Current v.s.
Gate-Emitter Voltage
5
6
0
1
2
3
4
5
6
V GE , Gate-Emitter Voltage(V)
Fig 6. Collector Current v.s.
Gate-Emitter Voltage
2
AP28G40GEM-HF
f=1.0MHz
6000
160
o
T A =70 C
C ies
ICP , Peak Collector Current (A)
5000
3000
2000
1000
0
1
5
9
13
17
21
25
29
C oes
C res
33
120
80
40
0
37
0
2
4
6
8
V GE , Gate-to-Emitter Voltage (V)
V CE , Collector-Emitter Voltage (V))
Fig 7. Typical Capacitance Characterisitics
Fig 8. Maximum Pulse Collector Current
VCE
90%
RC
TO THE
OSCILLOSCOPE
C VCE
G
RG
VCC=320 V
10%
E
VGE
+
-
4V
VGE
td(on) tr
Fig 9. Switching Time Test Circuit
td(off) tf
Fig 10. Switching Time Waveform
6
VCE
TO THE
C
OSCILLOSCOPE
G
VCC=200V
VGE
E
+
1~3mA
-
IG
IC
VGE , Gate -Emitter Voltage (V)
C (pF)
4000
I CP =40A
V CE =200V
5
4
3
2
1
0
0
40
80
120
160
Q G , Gate Charge (nC)
Fig 11. Gate Charge Test Circuit
Fig 12. Gate Charge Waveform
3