IXYS DE275X2

DE275X2-102N06A
RF Power MOSFET
♦
♦
♦
♦
♦
Common Source Push-Pull Pair
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a
common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.
VDSS
=
1000 V
ID25
=
16 A
RDS(on)
=
0.8 Ω
PDC
= 1180 W
Unless noted, specifications are for each output device
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
1000
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
Tc = 25°C
16
A
IDM
Tc = 25°C, pulse width limited by TJM
48
A
IAR
Tc = 25°C
6
A
EAR
Tc = 25°C
20
mJ
5
V/ns
dv/dt
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
>200
V/ns
1180
W
750
W
5.0
W
PDC (1)
PDHS (1)
Tc = 25°C, Derate 5.0W/°C above 25°C
PDAMB (1)
Tc = 25°C
Symbol
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min.
VGS = 0 V, ID = 3 ma
VGS(th)
VDS = VGS, ID = 4 ma
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 VDSS TJ = 25°C
TJ = 125°C
VGS = 0
RDS(on)
2
V
±100
nA
50
1
µA
mA
1.6
Ω
S
0.25
C/W
0.50
C/W
+175
175
TJM
-55
Tstg
Weight
5.5
7.5
-55
TJ
1.6mm (0.063 in) from case for 10 s
GATE 2
SD2
SourceSG2
2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
•
•
−
−
•
•
•
cycling capability
IXYS advanced low Qg process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
• High Performance Push-Pull RF
Package
• Optimized for RF and high speed
(1)
TL
V
2.5
RthJC (1)
RthJHS
max.
1000
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
VDS = 15 V, ID = 0.5ID25, pulse test
gfs
typ.
DRAIN 2
GATE 1
SG1
SourceSD1
1
IS = 0
VDSS
DRAIN 1
+175
switching at frequencies to >100MHz
• Easy to mount—no insulators needed
• High power density
°C
Note: All specifications are per each
transistor, unless otherwise noted.
°C
(1)
°C
300
°C
4
g
Thermal specifications are for the
package, not per transistor
DE275X2-102N06A
RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
0.3
Ω
1800
pF
130
pF
25
pF
21
pF
3
ns
2
ns
4
ns
5
ns
50
nC
20
nC
30
nC
RG
Ciss
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
Coss
Crss
Cstray
Back Metal to any Pin
Td(on)
Ton
Td(off)
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 Ω (External)
Toff
Qg(on)
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25
Qgs
Qgd
Source-Drain Diode
max.
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol
Test Conditions
min.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
typ.
Trr
IF = IS, -di/dt = 100A/µs,
VR = 100V
QRM
IRM
(1)
max.
6
A
96
A
1.5
V
200
ns
0.6
µC
4
A
These parameters apply to the package, not individual MOSFET devices.
For detailed device mounting and installation instructions, see the “DESeries MOSFET Mounting Instructions” technical note on IXYS RF’s web
site at www.ixysrf.com/Technical_Support/App_notes.html
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,860,072
4,881,106
4,891,686
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
5,640,045
DE275X2-102N06A
RF Power MOSFET
275X2-102N06A Capacitances vs Vds
10000
Ciss
Coss
Capacitance in pF
Crss
1000
100
10
0
100
200
300
400
500
600
700
800
900
1000
Vds in Volts
S = S1 = Source1
S = S1 = Source1
G1 = Gate1
D1 = Drain1
G2 = Gate2
D2 = Drain2
S = S2 = Source2
S = S2 = Source2
Note: Sources S1, S2 are independent, having no common connection between them for the package diagram.
DE275X2-102N06A
RF Power MOSFET
102N06A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3
MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds
is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are
modeled with reversed biased diodes. This provides a varactor type response necessary for a high
power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff.
10 DRAIN
Ld
4
Rd
Lg
Doff
D1crs
Roff
D2crs
20 GATE
6
8
1
5
Ron
Don
Dcos
Rds
3
M3
2
7
Ls
30 SOURCE
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the IXYS RF web site at
www.ixysrf.com
Net List:
*SYM=POWMOSN
.SUBCKT 102N06A 10 20 30
* TERMINALS: D G S
* 1000 Volt 6 Amp 1.6 Ohm N-Channel Power MOSFET
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 .5
DON 6 2 D1
ROF 5 7 1.0
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 1.9N
RD 4 1 1.6
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=4 KP=2.3)
.MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.2 TT=1N)
.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.6 VJ=.6 TT=1N RS=10M)
.MODEL D3 D (IS=.5F CJO=400P BV=1000 M=.35 VJ=.6 TT=400N RS=10M)
.ENDS
Doc #9200-0224 Rev 6
© 2006 IXYS RF
An
IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: deiinfo@directedenergy.com
Web: http://www.directedenergy.com