DMN3032LE 30V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary V(BR)DSS RDS(on) max 30V 29mΩ @ VGS = 10V 35mΩ @ VGS = 4.5V Features and Benefits ID TA = +25°C 5.6A 4.8A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • Case: SOT223 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) Applications • Moisture Sensitivity: Level 1 per J-STD-020 • DC Motor Control • Terminals Connections: See diagram below • DC-AC Inverters • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Weight: 0.112 grams (approximate) D SOT223 G S Top View Equivalent Circuit Pin Out - Top View Ordering Information (Note 4) Part Number DMN3032LE-13 Notes: Qualification Standard Case SOT223 Packaging 2,500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YWW N3032L DMN3032LE Document number: DS36695 Rev. 2 - 2 YWW N3032L = Manufacturer’s Marking N3032L = Marking Code YWW = Date Code Marking for SAT (Shanghai Assembly/ Test site) YWW = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y= Year (ex: 3 = 2013) WW = Week (01 - 53) 1 of 6 www.diodes.com May 2014 © Diodes Incorporated DMN3032LE Maximum Ratings (@TA = +25°C, unless otherwise specified.) NEW PRODUCT Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V TA = +25°C TA = +70°C ID 5.6 4.1 A TC = +25°C TC = +70°C ID 15.4 12.1 A IS 1.5 A IDM 25 A Continuous Drain Current (Note 5) VGS = 10V Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs pulse, duty cycle = 1%) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Value 1.8 1.1 Units RθJA 69 °C/W PD 14 W RθJC 8.7 °C/W TJ, TSTG -55 to +150 °C PD W Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS — — 1 µA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V V VDS = VGS, ID = 250µA ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS (ON) 1 — 2 — 22 29 — 27 35 mΩ VGS = 10V, ID = 3.2A VGS = 4.5V, ID = 2.8A Forward Transfer Admittance |Yfs| — 7 — S VDS = 5V, ID = 5.8A Diode Forward Voltage VSD — 0.7 1.5 V VGS = 0V, IS = 1A Input Capacitance Ciss — 498 — Output Capacitance Coss — 52 — pF Reverse Transfer Capacitance Crss — 45 — VDS = 15V, VGS = 0V f = 1MHz Gate Resistnace Rg — 2.2 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg — 11.3 — Gate-Source Charge Qgs — 1.4 — nC VDS = 15V, VGS = 10V, ID = 5.8A Gate-Drain Charge Qgd — 2.1 — Turn-On Delay Time tD(on) — 2.3 — Turn-On Rise Time tr — 3.9 — Turn-Off Delay Time tD(off) — 10 — ns VDS = 15V, VGS = 10V, RL = 2.6Ω, RG = 3Ω tf — 1.9 — DYNAMIC CHARACTERISTICS (Note 7) Turn-Off Fall Time Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 6 .Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. DMN3032LE Document number: DS36695 Rev. 2 - 2 2 of 6 www.diodes.com May 2014 © Diodes Incorporated DMN3032LE 20.0 20 VGS = 8V VDS = 5.0V VGS = 4.0V VGS = 3.0V 15 ID , DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 2.5V 5.0 VGS = 1.8V T A = 85°C TA = 25°C 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.18 0.16 VGS = 2.5V 0.14 0.12 0.1 0.08 0.06 0.04 VGS = 4.5V 0.02 VGS = 8V 0 2 TA = -55°C 5 0 0 0.2 0 TA = 125°C VGS = 2.0V 4 6 8 10 12 14 16 18 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.2 0.18 ID = 5.8A 0.16 0.14 0.12 0.1 ID = 4.8A 0.08 0.06 0.04 0.02 20 0 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic 20 2 0.080 VGS = 4.5V 0.070 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.0 TA = 150°C 10 10.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT 15.0 0.060 T A = 150°C 0.050 T A = 125°C 0.040 TA = 85°C 0.030 TA = 25°C 0.020 TA = -55°C 0.010 0.000 0 2 4 6 8 10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN3032LE Document number: DS36695 Rev. 2 - 2 20 3 of 6 www.diodes.com VGS = 10V ID = 10A 1.5 VGS = 4.5V ID = 5A 1 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature May 2014 © Diodes Incorporated DMN3032LE 2 VGS = 4.5V ID = 5A 0.04 1.8 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.05 0.03 VGS = 10 V ID = 10A 0.02 0.01 1.6 1.4 ID = 250µA 1 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 1000 20 16 14 TA = 150°C 12 TA = 125°C T A = 85°C 10 100 T A = 25°C 8 TA = -55°C 6 Ciss CT, JUNCTION CAPACITANCE (pF) 18 IS, SOURCE CURRENT (A) ID = 1mA 1.2 0 -50 4 Coss Crss 2 f = 1MHz 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 30 10 VGS GATE THRESHOLD VOLTAGE (V) NEW PRODUCT 0.06 VDS = 15V ID = 5.8A 8 6 4 2 0 0 2 4 6 8 10 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN3032LE Document number: DS36695 Rev. 2 - 2 12 4 of 6 www.diodes.com May 2014 © Diodes Incorporated DMN3032LE NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 99°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 12 Transient Thermal Resistance 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. D Q b1 C E SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm E1 Gauge Plane 0.25 Seating Plane e1 L b 0° e A1 7° 7° A ° 10 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1 C1 Y2 X2 DMN3032LE Document number: DS36695 Rev. 2 - 2 Dimensions X1 X2 Y1 Y2 C1 C2 Value (in mm) 3.3 1.2 1.6 1.6 6.4 2.3 C2 5 of 6 www.diodes.com May 2014 © Diodes Incorporated DMN3032LE IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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