DMG9N65CT Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance High BVDss rating for Power Application Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high-efficiency power management applications. Mechanical Data V(BR)DSS RDS(ON) Package 650V 1.3Ω @ VGS = 10V TO-220AB ID TC = +25°C 9.0 A • • Applications • • • • Motor Control Backlighting DC-DC Converters Power Management Functions • • • Case: TO-220AB Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Below Weight: TO-220AB – 1.85 grams (Approximate) D TO-220AB G S Top View Bottom View Equivalent Circuit Top View Pin Out Configuration Ordering Information (Note 4) Part Number DMG9N65CT Notes: Case TO-220AB Packaging 50 pieces/tube 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information TO-220AB 9N65CT 9N65CT = Product Type Marking Code AB = Foundry and Assembly Code YYWW = Date Code Marking YY = Last two digits of year (ex: 11 = 2011) WW = Week (01 - 53) YYWW AB DMG9N65CT Document number: DS35619 Rev. 7 - 2 1 of 6 www.diodes.com February 2015 © Diodes Incorporated DMG9N65CT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady TC = +25°C State TC = +70°C Pulsed Drain Current (Note 6) 10us pulse, pulse duty cycle<=1% Avalanche Current (Note 7) VDD = 100V, VGS = 10V, L = 60mH Repetitive Avalanche Energy (Note 7) VDD = 100V, VGS = 10V, L = 60mH Continuous Drain Current (Note 5) VGS = 10V Value 650 ±30 9.0 7.0 30 2.7 260 ID IDM IAR EAR Unit V V A A A mJ Thermal Characteristics Characteristic Power Dissipation (Note 5) TC = +25°C TC = +70°C Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Symbol Unit PD Max 165 100 RθJC TJ, TSTG 0.7 -55 to +150 °C/W °C W Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = 10V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 650 — — — — — — 1.0 ±100 V µA nA VGS = 0V, ID = 250µA VDS = 650V, VGS = 0V VGS = ±30V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 3 — — — — 0.7 8.5 0.7 5 1.3 — 1.0 V Ω S V VDS = VGS, ID = 250µA VGS = 10V, ID = 4.5A VDS = 40V, ID = 4.5A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr — — — — — — — — — — — — — 2,310 122 2.2 2.2 39 8.5 11.9 39 29 122 28 570 4.17 — — — — — — — — — — — — — pF VDS = 25V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VGS = 10V, VDS = 520V, ID = 8A ns ns ns ns ns µC Test Condition VGS = 10V, VDS = 325V, RG = 25Ω, ID = 8A dI/dt = 100A/µs, VDS = 100V, IF = 8A 5. Device mounted on an infinite heatsink. 6. Repetitive rating, pulse width limited by junction temperature. 7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. DMG9N65CT Document number: DS35619 Rev. 7 - 2 2 of 6 www.diodes.com February 2015 © Diodes Incorporated DMG9N65CT 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 10V 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 20 2.0 1.5 1.0 VGS = 10V VGS = 20V 0.5 0 0 2 4 6 8 ID, DRAIN-SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage DMG9N65CT Document number: DS35619 Rev. 7 - 2 TA = 150°C 10 TA = 125°C 0.1 TA = 85°C TA = 25°C TA = -55°C 0.01 0.001 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 1 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE Fig. 2 Typical Transfer Characteristics 6 4 VGS= 10V 3 TA = 150°C 2 T A = 125°C TA = 85°C 1 TA = 25°C 0 3 of 6 www.diodes.com TA = -55°C 0 2 4 6 8 ID, DRAIN CURRENT Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 10 February 2015 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 3.0 2.5 VGS = 10 V ID = 5A 2.0 VGS = 15V ID = 10A 1.5 1.0 0.5 0 50 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMG9N65CT -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 2.5 2.0 VGS = 10V ID = 5A 1.5 VGS = 15V ID = 10A 1.0 0.5 0 - 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 10 5 ID = 1mA 4 ID = 250µA 3 IS, SOURCE CURRENT (V) 6 VGS(th), GATE THRESHOLD VOLTAGE (V) 3.0 8 TA = 25°C 6 4 2 2 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMG9N65CT Document number: DS35619 Rev. 7 - 2 0 0 4 of 6 www.diodes.com 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current February 2015 © Diodes Incorporated DMG9N65CT 100 RDS(on) Limited ID, DRAIN CURRENT (A) 10 1 DC PW = 10s 0.1 0.01 0.001 1 PW = 1s PW = 100ms PW = 10ms TJ(max) = 150°C PW = 1ms TA = 25°C PW = 100µs VGS = 10V Single Pulse DUT on 1 * MRP Board 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 SOA, Safe Operation Area r(t), TRANSIENT THERMAL RESISTANCE 1 1,000 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 57° C/W Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.001 DMG9N65CT Document number: DS35619 Rev. 7 - 2 0.01 0.1 1 10 100 t1, PULSE DURATION TIME (sec) Fig. 10 Transient Thermal Resistance 5 of 6 www.diodes.com 1,000 10,000 February 2015 © Diodes Incorporated DMG9N65CT Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A P Q A1 SEATING PLANE E 16.00 ± 0.20* H1 D D1 L1 L b2 b e e1 c A2 *Guaranteed by TO-220AB leadframe design TO220AB Dim Min Typ Max A 3.56 4.82 A1 0.51 1.39 A2 2.04 2.92 b 0.39 0.81 1.01 b2 1.15 1.24 1.77 c 0.356 0.61 D 14.22 16.51 D1 8.39 9.01 e 2.54 e1 5.08 E 9.66 10.66 H1 5.85 6.85 L 12.70 14.73 L1 6.35 P 3.54 4.08 Q 2.54 3.42 All Dimensions in mm IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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